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    2160 TRANSISTOR Search Results

    2160 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2160 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DDX-2160

    Abstract: DDX-8000 ddx8228 DDX-2100 DDX-8001 500 watts stereo power amplifier diagram 2100 330uF 35V capacitor eia0603 ddx2160
    Text: DDX-2160/DDX-2100 All-Digital High Efficiency Power Amplifiers FEATURES • • • 1.0 GENERAL DESCRIPTION HIGH OUTPUT CAPABILITY DDX Mono-Mode: * * * DDX-2160: 1 x 160 / 125 W, 3Ω, <10% / <1% THD DDX-2160: 1 x 150 / 120 W, 4Ω, <10% / <1% THD DDX-2100: 1 x 130 / 100 W, 4Ω, <10% / <1% THD


    Original     		PDF DDX-2160/DDX-2100 DDX-2160: DDX-2100: Rev07 DDX-2160 DDX-8000 ddx8228 DDX-2100 DDX-8001 500 watts stereo power amplifier diagram 2100 330uF 35V capacitor eia0603 ddx2160

    DDX-2160

    Abstract: ddx-8228 DDX-2100 DDX-8000 DDX-2120 8229 ddx8000 ddx8228 ddx2160 Apogee
    Text: DDX-2160/DDX-2120/DDX-2100 All-Digital High Efficiency Power Amplifiers FEATURES • • • • * * * DDX-2160: 1 x 160 / 150 W, 3Ω / 4Ω, < 10% THD DDX-2120: 1 x 125 / 150 W, 3Ω / 4Ω, < 10% THD DDX-2100: 1 x 100 / 130 W, 3Ω / 4Ω, < 10% THD * *


    Original     		PDF DDX-2160/DDX-2120/DDX-2100 DDX-2160: DDX-2120: DDX-2100: DDX-2160 ddx-8228 DDX-2100 DDX-8000 DDX-2120 8229 ddx8000 ddx8228 ddx2160 Apogee

    transistor 8026

    Abstract: 2SC5245 FH105
    Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2


    Original     		PDF ENN6219 FH105 FH105] FH105 2SC5245, transistor 8026 2SC5245

    2SC5245

    Abstract: FH105 IT00323 transistor 8026
    Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2


    Original     		PDF ENN6219 FH105 FH105] FH105 2SC5245, 2SC5245 IT00323 transistor 8026

    equivalent ZO 607

    Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
    Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


    Original     		PDF ENN6220 FH202 FH202] 2SC5226) TS4162) FH202 2SC5245 TS4162, equivalent ZO 607 j200 transistor 2SC5226 TS4162

    2SC5245

    Abstract: 2SC5415 FH203 IT00483 18896
    Text: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


    Original     		PDF ENN6179 FH203 FH203] 2SC5245) 2SC5415) FH203 2SC5245 2SC5415, 2SC5415 IT00483 18896

    IT00483

    Abstract: 2SC5245 2SC5415 FH203 IT00491
    Text: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


    Original     		PDF ENN6179 FH203 FH203] 2SC5245) 2SC5415) FH203 2SC5245 2SC5415, IT00483 2SC5415 IT00491

    equivalent ZO 607

    Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
    Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


    Original     		PDF ENN6220 FH202 FH202] 2SC5226) TS4162) FH202 2SC5245 TS4162, equivalent ZO 607 j200 transistor 2SC5226 TS4162

    5000w audio circuit design

    Abstract: AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011
    Text: National Semiconductor Application Note 2160 Michael Hartshorne August 2, 2011 Introduction PCB Features The LM5066EVK evaluation board provides the design engineer with a fully functional intelligent monitoring and protection controller board designed for positive voltage systems.


    Original     		PDF LM5066EVK LM5066 AN-2160 5000w audio circuit design AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA487A – August 2011 – Revised April 2013 AN-2160 LM5066 Evaluation Board 1 Introduction The LM5066EVK evaluation board provides the design engineer with a fully functional intelligent monitoring and protection controller board designed for positive voltage systems. This application note


    Original     		PDF SNVA487A AN-2160 LM5066 LM5066EVK

    TAJB105KLRH

    Abstract: tic 2160 SXB-2089Z SXB-2089 LL1608-FSR27J MCH185A121JK ML200C an078 MCH185C122KK Sirenza AN-21
    Text: DESIGN APPLICATION NOTE - AN-078 SXB-2089Z Amplifier Application Circuits Abstract Circuit Details Sirenza Microdevices’ SXB-2089 is a high high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC designed for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) &


    Original     		PDF AN-078 SXB-2089Z SXB-2089 450MHz 2140MHz TAJB105KLRH MCH185C122KK 1200pF MCH185A120JK MCH185A010CK tic 2160 LL1608-FSR27J MCH185A121JK ML200C an078 Sirenza AN-21

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21125R3 MRF21125SR3

    MRF21085

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085S

    j686

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n c l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21125 MRF21125S j686

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085R3 MRF21085LSR3

    wb4 marking

    Abstract: J152 mosfet transistor 2110 transistor
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180R6 wb4 marking J152 mosfet transistor 2110 transistor

    MOTOROLA J210

    Abstract: MRF21085
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA J210

    mosfet 400 mhz

    Abstract: MRF21045
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045R3 MRF21045S MRF21045SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21045 MRF21045R3 MRF21045S MRF21045SR3 mosfet 400 mhz

    j686

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF dB110 MRF21125 MRF21125S MRF21125SR3 j686

    NJM 78L08UA-ND

    Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original     		PDF AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor

    Q24060

    Abstract: transistor D1303 m1-6116 Q24008
    Text: ADVANCE DEVICE SPECIFICATION Q24000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AMCC Q24000 Series of BiCM OS logic arrays is comprised of six products with densities of 760, 2160, 5760, 9072, 13,440 and 27,520 equivalent gates. The series is optimized to provide CM OS densities with


    OCR Scan     		PDF Q24000 /D1303-0790 Q24060 transistor D1303 m1-6116 Q24008

    H157D1

    Abstract: D1113 A7 NPN EPITAXIAL TRANSISTOR D1113 ECL100K ECL10K Q14000B Q2100B Q6000B Q9100B
    Text: PRELIMINARY DEVICE SPECIFICATION Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM CC Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760, 9072 and 13,440 equivalent gates. The series is optimized to provide CMOS densities with b ip ola r perform ance


    OCR Scan     		PDF Q14000 /D1113-0988 H157D1 D1113 A7 NPN EPITAXIAL TRANSISTOR D1113 ECL100K ECL10K Q14000B Q2100B Q6000B Q9100B

    CC650

    Abstract: UTC A11 ECL IC NAND
    Text: A R rP nR cFLI i i IvMi iIi M NM n Yi DEVICE SPECIFICATION Zs /A / zj - L rF=ü r=û [Ml IMI — — n Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM C C Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760,


    OCR Scan     		PDF Q14000 CC650 UTC A11 ECL IC NAND

    flip flop tipo d

    Abstract: MUX157 Q14000B Q2100B Q28000B Q6000B Q9100B ML-02-L
    Text: 57E D • OfifiTODE 0 0 0 0 55 0 S ■ AMCC A P P L I E D MI C R O C I R C U I T S DEVICE SPECIFICATION T-V2-/I-JST Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AMCC Q14000 Series of BiCMOS logic arrays is comprised of five products with densities of 2160,


    OCR Scan     		PDF 00005SO Q14000 flip flop tipo d MUX157 Q14000B Q2100B Q28000B Q6000B Q9100B ML-02-L