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    2149 STATIC RAM Search Results

    2149 STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    2149 STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cy3341

    Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
    Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C189 7C190 7C122 7C167A 7C168A cy3341 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram

    Triton P54C

    Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
    Text: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195


    Original     		PDF 7C147 7C123 7C148 7C149 7C150 7C122 7C167A 7C168A 7C128A 7C187 Triton P54C cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide

    H8S/2169

    Abstract: Hitachi DSAUTAZ006 2149 RAM
    Text: Section 1 Overview 1.1 Overview The H8S/2149 and H8S/2169 F-ZTAT is a microcomputer MCU built around the H8S/2000 CPU, employing Hitachi’s proprietary architecture, and equipped with on-chip supporting functions required for system configuration. The H8S/2000 CPU has an internal 32-bit architecture, is provided with sixteen 16-bit general


    Original     		PDF H8S/2149 H8S/2169 H8S/2000 32-bit 16-bit 16-Mbyte H8/300 H8/300H H8/300, Hitachi DSAUTAZ006 2149 RAM

    via vt8235 user manual

    Abstract: keyboard and touchpad schematic via vt8235 K8T800 vt8235 AMD athlon socket 754 schematic diagram lcd tv tuner box ddr ram repair via vt8235 manual hard disk ATA pcb schematic
    Text: Preface Notebook Computer D470K Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


    Original     		PDF D470K 71-D470K-004) via vt8235 user manual keyboard and touchpad schematic via vt8235 K8T800 vt8235 AMD athlon socket 754 schematic diagram lcd tv tuner box ddr ram repair via vt8235 manual hard disk ATA pcb schematic

    2149 RAM

    Abstract: 18-PIN 21493 2149 static ram
    Text: MOS LSI T M S 2149 JL, AIL, FPL FAST 1024-W 0R D BY 4 -B IT STATIC RAM ^ _JANUARY 1982 - REVISED MAY 1982 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization • TOP VIEW S in gle+5 V Supply (±10% Tolerance)


    OCR Scan     		PDF 1024-W0RD 18-PIN 2149 RAM 21493 2149 static ram

    2148 ram

    Abstract: nmos static ram 2149 static ram
    Text: Am2148/2149 1024 x 4 Static RAM High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interface levels • • Low power dissipation - Am2148: 990 mW active, 165 mW power down


    OCR Scan     		PDF Am2148/2149 Am2148) Am2148: Am21L48 Am2148 Am2149 2148 ram nmos static ram 2149 static ram

    Static ram 2149

    Abstract: 2149 STATIC RAM
    Text: MOS LSI TMS 2149 JL, NL, FPL FAST 1024-W0RD BY 4-BIT STATIC RAM J A N U A R Y 1982 - R E V IS E D M A Y 1 98 2 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization TOP VIEW Q U l8 3 V CC A2 Q 2 17 A8 16 A4 AlC 3


    OCR Scan     		PDF 1024-W0RD 18-PIN VZ777S///y// Static ram 2149 2149 STATIC RAM

    IC 2148

    Abstract: 21L49 CY2149 2148 static ram 21l48
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese­ lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance


    OCR Scan     		PDF CY2148/CY21L48 CY2149/CY21L49 2148--55D CY2148 CY2149 38-00024-B IC 2148 21L49 2148 static ram 21l48

    AM2149

    Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
    Text: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 Am2148 Am2149 IG 03210 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55

    AM2149

    Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
    Text: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am2148 Am2149 1024x4. AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55

    CY2148-45PC

    Abstract: CY2149-45PC CY2148-45DMB CY2149 CY21L48-45DC CY2148 CY2149-45DMB CY2149-45 CY21L49-55PC 214945
    Text: CY2148/CY21L48 CY2149/CY21L49 ss s “ — y — - SEMICONDUCTOR Features Functional Description • Automated power-down when dese­ lected 2148 • CMOS for optimum speed/power • Low power — 660 mW (commercial) — 770 mW (military) • 5-volt power supply ± 10% tolerance


    OCR Scan     		PDF CY2148/CY21L48 CY2149/CY21L49 CY2148 CY2149 the-35PC CY21L49â CY2148-45PC CY2149-45PC CY2148-45DMB CY21L48-45DC CY2149-45DMB CY2149-45 CY21L49-55PC 214945

    CY2149

    Abstract: No abstract text available
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR F eatures 1,024 x 4 Static R/W RAM F unctional D escription Automated power-down when dese­ lected 2148 and w ntc enable (W E ) inputs are both LOW, da ta on the four da ta input/output pins (I/Oo through I / O 3 ) is w ritten into the


    OCR Scan     		PDF CY2148/CY21L48 CY2149/CY21L49 CY2148 CY2149 CY2149/CY21L49

    lt 7216

    Abstract: No abstract text available
    Text: 7 /8 " Diameter 10-Turn W i rewound Precision Potentiometer/ Position Sensor FEATURES I 7216, 7221 Bushing Mount, Sleeve Bearing 7223 Servo Mount, Ball Bearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3% Minimum Practical Resistance Tolerance


    OCR Scan     		PDF 10-Turn lt 7216

    2148 static ram

    Abstract: No abstract text available
    Text: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 OP000730 OP000741 OP001081 OP000771 2148 static ram

    Untitled

    Abstract: No abstract text available
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM a n d w rite e n a b le W E in p u ts a re b o th LO W , d a ta o n th e f o u r d a ta in p u t/o u tp u t p in s ( I /O o th ro u g h I/O 3 ) is w ritte n in to th e m e m o ry lo c a tio n a d d re s s e d by th e a d d re s s


    OCR Scan     		PDF CY2148/CY21L48 CY2149/CY21L49 38-00024-B

    LT 7223

    Abstract: lt 7216
    Text: MODEL SERIES 7 2 0 0 7 /8 " Diameter 10-Turn W irewound Precision Potentiometer/ Position Sensor I 721 6,7 2 2 1 pushing M ount, Sleeve Rearing 7223 Servo M ount, pall Rearing ELECTRICAL Resistance Range, Ohms 10 to 125K Standard Resistance Tolerance ±3%


    OCR Scan     		PDF 10-Turn LT 7223 lt 7216

    231369

    Abstract: 2148H 2149H 2149H-1 2149H-2 2149H-3 2149HL
    Text: 2149H 1024 x 4-BIT STATIC RAM Max. Address Access Time ns Max. Chip Select Access Time (ns) 2149H-1 2149H-2 2149H-3 2149H 2149HL 35 45 55 70 70 20 25 30 30 150 150 125 20 150 150 Max. Active Current (mA) Common Data input and Output Improved Performance Margins


    OCR Scan     		PDF 2149H 2149H-1 2149H-2 2149H-3 2149H 2149HL 2148H 4096-bit 231369 2149HL

    2149H-3

    Abstract: 2148H
    Text: 2149H 1024 x 4-BIT STATIC RAM 2149H 2149HL 55 70 70 25 30 30 150 150 125 2149H-1 2149H-2 2149H-3 Max. Address Access Time ns 35 45 Max. Chip Select Access Time (ns) 20 20 Max. Active Current (mA) 150 150 Improved Performance Margins Common Data Input and Output


    OCR Scan     		PDF 2149H 2149H-1 2149H-2 2149H-3 2149HL Time--20 2148H 4096-bit

    Untitled

    Abstract: No abstract text available
    Text: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),


    OCR Scan     		PDF CY7C18S CY7C185 300-mil-wide 28-Lead CY7C185â 28-Lead 300-Mil)

    Untitled

    Abstract: No abstract text available
    Text: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power


    OCR Scan     		PDF CY7C164A CY7C166A 7C166A) CY7C164A CY7C166A 7C166A

    S-22S12I

    Abstract: S-22S12R X2212 seiko s22s
    Text: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and


    OCR Scan     		PDF S-22S12R/I 256-word S-22S12R/I X2212 10mAtyp. S-22S12I S-22S12R seiko s22s

    C104A

    Abstract: C104A-0
    Text: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for


    OCR Scan     		PDF CY7C164A CY7C166A 7C166A) C104A C104A-0

    Untitled

    Abstract: No abstract text available
    Text: CY7C185 ^ CYPRESS 8K x 8 Static RAM F e a tu re s F u n c tio n a l D escrip tio n • High speed — 15 ns The CY7C185 is a high-performance CM OS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C185 CY7C185 --25PC 85-25V 185-25Z 185-35PC 85-35V 185-35Z 28-Lead 300-Mil)

    MBM2149-55L

    Abstract: MBM2149-70L 48CK MBM2149 MBM2149-45
    Text: F U JIT SU m ic ro e le c tro n ic s MOS 4096-BIT STATIC RANDOM ACCESS MEMORY MBM2149-45 MBM2149-55L MBM2149-70L DESCRIPTION The Fujitsu MBM2149 is a 1024 word by 4-bit static random ac­ cess memory fabricated using N-channel silicon gate MOS tech­ nology. The memory is fully static


    OCR Scan     		PDF MBM2149-45 MBM2149-55L 4096-BIT MBM2149-70L MBM2149 MBM2149-45: MBM2149-55L: MBM2149-70L: MBM2149-55L 48CK MBM2149-45