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    214 FAIRCHILD TRANSISTOR Search Results

    214 FAIRCHILD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    214 FAIRCHILD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQA70N10

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET TM FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10 FQA70N10

    FQH70N10

    Abstract: No abstract text available
    Text: FQH70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQH70N10 FQH70N10

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA90N08

    Untitled

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET FQA70N10 TM 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10

    FQA47P06

    Abstract: No abstract text available
    Text: FQA47P06 September 2000 QFET TM FQA47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA47P06 FQA47P06

    FQA47P06

    Abstract: No abstract text available
    Text: QFET TM FQA47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA47P06 FQA47P06

    FQA90N08

    Abstract: No abstract text available
    Text: QFET TM FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA90N08 FQA90N08

    FQA90N08

    Abstract: No abstract text available
    Text: QFET TM FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA90N08 FQA90N08

    FQA85N06

    Abstract: No abstract text available
    Text: QFET TM FQA85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA85N06 FQA85N06

    Untitled

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET TM FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10

    FQA70N10

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET TM FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10 FQA70N10

    FQA47P06

    Abstract: No abstract text available
    Text: QFET TM FQA47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA47P06 FQA47P06

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQA85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA85N06

    FQA85N06

    Abstract: No abstract text available
    Text: QFET TM FQA85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA85N06 FQA85N06

    FQA85N06

    Abstract: No abstract text available
    Text: FQA85N06 April 2000 QFET TM FQA85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA85N06 FQA85N06

    Untitled

    Abstract: No abstract text available
    Text: FQA90N08 August 2000 QFET TM FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA90N08

    FQD20N06LE

    Abstract: FQU20N06LE
    Text: QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD20N06LE FQU20N06LE FQU20N06LE

    dv/dt diode protection

    Abstract: FQD20N06LE FQU20N06LE
    Text: FQD20N06LE / FQU20N06LE August 2000 QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD20N06LE FQU20N06LE dv/dt diode protection FQU20N06LE

    Untitled

    Abstract: No abstract text available
    Text: FQD20N06LE / FQU20N06LE August 2000 QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD20N06LE FQU20N06LE

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD20N06LE FQU20N06LE

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    FQD20N06LETF

    Abstract: No abstract text available
    Text: QFET TM FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD20N06LE FQU20N06LE FQD20N06LETM FQD20N06LETF O-252

    AN214

    Abstract: DIODE schottky 0.2v PI3HDMI412AD 2N7002LT1G 2N7002L-D Schottky Diode 30V 1A SOD123 AN-214 BC817-25LT1GOSTR-ND CDBA140-G MBR130T1G
    Text: #214 PI3HDMI412AD, PI3HDMI412FTxx, PI3HDMI413 The Circuits for Leakage Prevention in Source Application by Paul Li Introduction There is a possible condition in which a current leakage may occur caused by the ESD diodes in PI3HDMI412FTxx, PI3HDMI413 and PI3HDMI412AD, for notebook and DVI card source applications.


    Original     		PDF PI3HDMI412AD, PI3HDMI412FTxx, PI3HDMI413 PI3HDMI413 PI3HDMI412AD AN214 DIODE schottky 0.2v PI3HDMI412AD 2N7002LT1G 2N7002L-D Schottky Diode 30V 1A SOD123 AN-214 BC817-25LT1GOSTR-ND CDBA140-G MBR130T1G

    Untitled

    Abstract: No abstract text available
    Text: August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density


    Original     		PDF NDT014L