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    Untitled

    Abstract: No abstract text available
    Text: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for


    Original     		PDF PI2DDR3212 2133Mbps, 14-bit 2133Mbps PI2DDR3212 14-bit MO-220 52-Pin, PD-2102

    E1751E20

    Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features


    Original     		PDF EDJ2108DEBG-MQ 2133Mbps) EDJ2116DEBG-MQ EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) E1751E20 EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L

    Untitled

    Abstract: No abstract text available
    Text: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for


    Original     		PDF PI2DDR3212 2133Mbps, 14-bit 2133Mbps PI2DDR3212 14-bit MO-220 52-Pin, PD-2102 PI2DDR3212ZLE

    NT5CB64M16DP

    Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units


    Original     		PDF NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066-CL7) DDR3/L-1333-CL8) DDR3/L-1600-CL10) DDR3-1866-CL11) NT5CB64M16DP nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 x8/78

    K4B2G1646C-HCH9

    Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
    Text: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646C 96FBGA K4B2G1646C-HCH9 K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133

    NT5CB128m16FP

    Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP x8/78 NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F

    K4W2G1646E-BC11

    Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
    Text: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4W2G1646E 96FBGA K4W2G1646E-BC11 K4W2G1646E-BC1A k4w2g1646 K4W2G1646E

    2310 dhi

    Abstract: NT5CB64M16DP nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14
    Text: 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8 CL10 CL12 CL13 Units Min. Max.


    Original     		PDF NT5CB128M8DN NT5CB64M16DP NT5CC128M8DN NT5CC64M16DP DDR3/L-1066 1600Mbps. 1600Mbps DDR3-1866 DDR3-1866 2310 dhi nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14

    NT5CB128M16FP

    Abstract: NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 155es x8/78 NT5CB128M16FP NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN

    GDDR5

    Abstract: 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA
    Text: Jul.2010 Graphics Code Information Component K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory K 11. "─“ 2. DRAM : 4 12. Package - gDDR2 H : 84FBGA (Halogen Free & Lead Free) B : 84FBGA (Halogen Free & Lead Free & Flip Chip)


    Original     		PDF 84FBGA 100FBGA 96FBGA 136FBGA 170FBGA 8K/64ms 8K/32ms GDDR5 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA

    k4g10325fe-hc04

    Abstract: samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung
    Text: Jul. 2010 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF K4W2G1646C HC1A/11 HC7A/08 A/12/14 16Mx32 128Mx16 K4J52324KI 96ball 512Mb 136ball k4g10325fe-hc04 samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung

    K4B1G1646G-BCK0

    Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCF8 K4B1G1646G K4B1G1646G-BCNB k4b1g1646g-bch K4B1G1646GBCH9 K4B1G1646G-BCMA K4B1G1646G-BCF DDR3-2133
    Text: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B1G1646G 96FBGA K4B1G1646G-BCK0 K4B1G1646G-BCH9 K4B1G1646G-BCF8 K4B1G1646G K4B1G1646G-BCNB k4b1g1646g-bch K4B1G1646GBCH9 K4B1G1646G-BCMA K4B1G1646G-BCF DDR3-2133

    K4W1G1646G-BC11

    Abstract: K4W1G1646G-BC12 470 AP 02
    Text: Rev. 1.0, Nov. 2010 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4W1G1646G K4W1G1646G-BC11 K4W1G1646G-BC12 470 AP 02

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG 256M words x 8 bits EDJ2116DEBG (128M words × 16 bits) Specifications Features • Density: 2G bits • Organization — 32M words × 8 bits × 8 banks (EDJ2108DEBG) — 16M words × 16 bits × 8 banks (EDJ2116DEBG)


    Original     		PDF EDJ2108DEBG EDJ2116DEBG EDJ2108DEBG) EDJ2116DEBG) 78-ball 96-ball M01E1007 E1712E50

    Untitled

    Abstract: No abstract text available
    Text: Speedster22i DDR Controller User Guide UG031 – April 15, 2013 UG031, April 15, 2013 1 Copyright Info Copyright 2013 Achronix Semiconductor Corporation. All rights reserved. Achronix is a trademark and Speedster is a registered trademark of Achronix Semiconductor Corporation.


    Original     		PDF Speedster22i UG031 UG031, ddr123

    NT5CB64M16DP

    Abstract: nt5cb64m16 NT5CB64M16DP-DH NT5CB128M8DN-CFI NT5CC64M16DP NT5C NT5CC128M8DN DDR3 pin out NT5CB64M16D NT5CB64
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8


    Original     		PDF NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066 NT5CB64M16DP nt5cb64m16 NT5CB64M16DP-DH NT5CB128M8DN-CFI NT5CC64M16DP NT5C NT5CC128M8DN DDR3 pin out NT5CB64M16D NT5CB64

    K4B1G1646G-BCK0

    Abstract: K4B1G1646G-BCH9 K4B1G1646G-BCMA K4B1G1646G-BCN
    Text: Rev. 1.11, Jun. 2011 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B1G1646G 96FBGA K4B1G1646G-BCK0 K4B1G1646G-BCH9 K4B1G1646G-BCMA K4B1G1646G-BCN

    NT5CB64M16FP-DH

    Abstract: NT5CB64M16FP nt5cb64m16 NT5CB128M8FN-DH NT5CC64M16FP NT5CB128M8FN NT5CB64M1
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN/NT5CB64M16FP NT5CC128M8FN/NT5CC64M16FP Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -DH/DHI* -EJ* -FK* DDR3/L-1600 DDR3-1866 DDR3-2133 CL10 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK Avg.


    Original     		PDF NT5CB128M8FN/NT5CB64M16FP NT5CC128M8FN/NT5CC64M16FP DDR3/L-1600 DDR3-1866 DDR3-2133 NT5CB64M16FP-DH NT5CB64M16FP nt5cb64m16 NT5CB128M8FN-DH NT5CC64M16FP NT5CB128M8FN NT5CB64M1

    NT5CB128M16FP-DI

    Abstract: NT5CC128M16FP-DI NT5CB128M16FP-DII NT5CB256M8FN-DI NT5CC256M8FN-DI NT5CB128M16FP-EJ NT5CB128M16FP nt5cb128m16 NT5CB128 NT5CC128M-16FP-DI
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 x8/78 NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M16FP-DII NT5CB256M8FN-DI NT5CC256M8FN-DI NT5CB128M16FP-EJ NT5CB128M16FP nt5cb128m16 NT5CB128 NT5CC128M-16FP-DI

    Untitled

    Abstract: No abstract text available
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   Differential bidirectional data strobe  Write Leveling  OCD Calibration Backward compatible to VDD= VDDQ= 1.5V  Dynamic ODT Rtt_Nom & Rtt_WR ±0.075V 


    Original     		PDF NT5CB128M8FN NT5CB64M16FP NT5CC128M8FN NT5CC64M16FP x8/x16

    NT5CC128M16FP-DII

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP NT5CC128M16FP-DII

    NT5CB128M8FN

    Abstract: NT5CB64M16FP-EK NT5CB64M16FP-DH NT5CB64M16FP
    Text: 1Gb DDR3 F-die SDRAM NT5CB128M8FN / NT5CB64M16FP NT5CC128M8FN / NT5CC64M16FP Feature   8n-bit prefetch architecture  Output Driver Impedance Control  Differential bidirectional data strobe Backward compatible to VDD= VDDQ= 1.5V  Write Leveling


    Original     		PDF NT5CB128M8FN NT5CB64M16FP NT5CC128M8FN NT5CC64M16FP x8/x16 NT5CB64M16FP-EK NT5CB64M16FP-DH NT5CB64M16FP

    EDJ2116DEBG-DJ-F

    Abstract: EDJ2116DEBG EDJ2108DEBG-GN-F EDJ2108DEBG DDR3-2133L EDJ2116DEBG-GN-F 2133M
    Text: COVER DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG 256M words x 8 bits EDJ2116DEBG (128M words × 16 bits) Specifications Features • Density: 2G bits • Organization — 32M words × 8 bits × 8 banks (EDJ2108DEBG) — 16M words × 16 bits × 8 banks (EDJ2116DEBG)


    Original     		PDF EDJ2108DEBG EDJ2116DEBG EDJ2108DEBG) EDJ2116DEBG) 78-ball 96-ball 2133Mbps/1866Mbps/1600Mbps/1333Mbps EDJ2116DEBG-DJ-F EDJ2116DEBG EDJ2108DEBG-GN-F EDJ2108DEBG DDR3-2133L EDJ2116DEBG-GN-F 2133M