2118F Search Results
2118F Price and Stock
Wakefield-Vette 960-21-18-F-AB-0HEATSINK 21X18MM FRONT PUSH PIN |
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960-21-18-F-AB-0 | Box | 4 | 1 |
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960-21-18-F-AB-0 |
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960-21-18-F-AB-0 | Bulk | 1,600 |
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960-21-18-F-AB-0 | Bulk | 14 Weeks | 400 |
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960-21-18-F-AB-0 | 1,600 |
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960-21-18-F-AB-0 | 1 |
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Rochester Electronics LLC MC2118FIC GATE NAND 4CH 2-INP 14CFLTPK |
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MC2118F | Bulk | 15 |
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Toshiba America Electronic Components TLP2118(F)PHOTOCOUPLER SO8 |
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TLP2118(F) | Tube |
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FIBOX PC-21-18-FC3ENCLOSURE PLAS 9.25"L X 7.28"W |
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PC-21-18-FC3 | Bulk | 1 |
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Samtec Inc TSW-121-18-F-DCLASSIC PCB HEADER STRIPS, 0.100 |
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TSW-121-18-F-D | Bulk | 1 |
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TSW-121-18-F-D | Bulk | 1 |
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TSW-121-18-F-D | Bulk | 1 |
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TSW-121-18-F-D | 1 |
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2118F Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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RN1114FT
Abstract: RN1115FT RN1116FT RN1117FT RN1118FT RN2114FT
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Original |
RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT RN1114FT RN1115FT RN1116FT RN1117FT RN1118FT | |
Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design |
Original |
RN2114FTâ RN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN1114FT RN1118FT RN2114FT | |
Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Enabling simplified circuit design |
Original |
RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT | |
Contextual Info: RN2114FV~2118FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FV,RN2115FV,RN2116FV ,RN2117FV,2118FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 With built-in bias resistors |
Original |
RN2114FVâ RN2118FV RN2114FV RN2115FV RN2116FV RN2117FV RN2114FV | |
RN1114F
Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
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Original |
RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F RN1118F | |
RN1114FT
Abstract: RN1115FT RN1116FT RN1117FT RN1118FT RN2114FT
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Original |
RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT RN1114FT RN1115FT RN1116FT RN1117FT RN1118FT | |
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design |
Original |
RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F | |
Contextual Info: RN2114F~2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design |
Original |
RN2114FRN2118F RN2114F RN2115F RN2116F RN2117F RN2118F RN1114F RN1118F | |
Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design |
Original |
RN2114FTRN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT RN1114FT RN1118FT RN2114FT RN2115FT | |
RN1114F
Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
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Original |
RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F RN1118F | |
RN1114F
Abstract: RN1118F RN2114F RN2115F RN2116F RN2117F RN2118F
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Original |
RN2114FRN2118F RN2114F RN2115F RN2116F RN2117F RN2118F RN1114F RN1118F RN2114F RN2115F RN1118F RN2118F | |
RN2114FV
Abstract: RN2115FV RN2116FV RN2117FV RN2118FV
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Original |
RN2114FVRN2118FV RN2114FV RN2115FV RN2116FV RN2117FV RN2118FV RN2114FV RN2115FV RN2116FV RN2118FV | |
RN1114F
Abstract: RN1118F RN2114F RN2115F RN2116F RN2117F RN2118F
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Original |
RN2114FRN2118F RN2114F RN2115F RN2116F RN2117F RN2118F RN1114FRN1118F RN2114F RN2115F RN2117F RN1114F RN1118F RN2118F | |
RN1114FT
Abstract: RN1115FT RN1116FT RN1117FT RN1118FT RN2114FT
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Original |
RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT RN1114FT RN1115FT RN1116FT RN1117FT RN1118FT | |
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Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design |
Original |
RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT RN1114FT | |
Contextual Info: RN2114F~2118F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114F,RN2115F,RN2116F,RN2117F,2118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design |
Original |
RN2114Fâ RN2118F RN2114F RN2115F RN2116F RN2117F RN1114F RN1118F RN2114F | |
RN1114FT
Abstract: RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT
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Original |
RN2114FTRN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT RN1114FT RN1118FT RN2114FT RN2115FT RN1118FT RN2114FT RN2115FT RN2116FT RN2117FT RN2118FT | |
RN1114F
Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
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Original |
RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F RN1118F | |
Contextual Info: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design |
Original |
RN1114F RN1118F RN1115F RN1116F RN1117F RN2114F 2118F RN1114F | |
Contextual Info: T-l 3/4 Blinking LED Lamps FEATURES • T-1 3/4 blinking LED • Diffused lens MAXIMUM RATINGS Ta = 25°C OPERATING V O LT A G E (VI REVERSE V O LT A G E (VR ) (V) OPERATING T EM PER AT U R E (Topr) (°C| STORAGE T EM PER AT U R E (T ,ta ) l°C ) M T1118F-R G |
OCR Scan |
T1118F-R T4118FO T4118F-H 00006CH | |
Contextual Info: Terminations SC Type DC - 11.0 GHz Performance •Wideband Performance ■5 Watt Model available ■Low VSWR - 50 Ohm - High Performance. ■Rugged Stainless Steel Construction Midwest Microwave's SC type series of coaxial low and medium power Terminations provide temperature stable, performance in |
OCR Scan |
Mil-E-5400 Mil-E-16400 -2117-MO-SC0-O2 -2117-MC-SC0-02 TRM-2117-FC-SC0-02 -2117-F0-SC0-02 -2118-M 0-SC0-07 -2118-F0-SC0-07 -2118-MC-SC0-07 | |
Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm |
Original |
RN2114FTâ RN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN1114FT RN1118FT RN2114FT | |
Contextual Info: RN2114FT~2118FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2114FT, RN2115FT, RN2116FT, RN2117FT, 2118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm Built-in bias resistors Enabling simplified circuit design |
Original |
RN2114FTRN2118FT RN2114FT, RN2115FT, RN2116FT, RN2117FT, RN2118FT RN1114FT RN1118FT RN2114FT RN2115FT | |
Contextual Info: RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Enabling simplified circuit design |
Original |
RN1114FT RN1118FT RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN2114FT 2118FT |