Untitled
Abstract: No abstract text available
Text: Cell Type N-700AAC Specifications Nominal Capacity Nominal Voltage 700mAh 1.2V Standard 70mA Charging Current Quick 210mA Fast 1050mA Standard 14 to 16Hrs. Charging Time Quick 4 to 6Hrs. Fast about 1Hr. Standard 0°C to +45°C [+32°F to 113°F] Charge Quick
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N-700AAC
700mAh
210mA
1050mA
16Hrs.
1000Hz)
23g/0
140mA
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PDF
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A61L73081
Abstract: A61L73081S-12 A61L73081S-15 A61L73081SW-12 A61L73081SW-15
Text: A61L73081 Series 128K X 8 BIT HIGH SPEED CMOS SRAM Document Title 128K X 8 BIT HIGH SPEED CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue July 14, 2000 Preliminary 1.0 Change ICC1 from 120mA to 220mA April 26, 2001 Final 100mA to 210mA
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A61L73081
120mA
220mA
100mA
210mA
A61L73081S-12
A61L73081S-15
A61L73081SW-12
A61L73081SW-15
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PDF
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Untitled
Abstract: No abstract text available
Text: .900 MAX .410 MAX. 1/4 .210MAX. BLUE BEAD =^5 =^5) .810 MAX 1.062 1.320 MAX =^> =*3 «31 DRILL .120 DIA. 2 HOLES REV. 1 .3 7 0 0 4 0 -,0 4 5 7 /9 /9 2 COIL: § +25° C CUSTOMER DATA SHEET 675 OHMS i 10% RESISTANCE . NOMINAL VOLTAGE 26.5 VDC MUST OPERATE _
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OCR Scan
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210MAX.
FW1193Q01
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PDF
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N-700AAC
Abstract: No abstract text available
Text: Cell Type N-700AAC Specifications Nominal Capacity Nominal Voltage H D d H Dimensions of Bare Cell D d 49.5 ±0.3 1.948 ±0.012 13.8 ±0.2 0.543 ±0.008 7.0 0.276 mm inch mm inch mm inch 700mAh 1.2V Standard 70mA Charging Current Quick 210mA Fast 1050mA Standard
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Original
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N-700AAC
700mAh
210mA
1050mA
16Hrs.
1000Hz)
23g/0
140mA
N-700AAC
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PDF
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Untitled
Abstract: No abstract text available
Text: TGA4036 19 - 38 GHz Medium Power Amplifier Key Features • • • • • • • Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA 210mA @ P1dB 0.25 um 3MI pHEMT Technology Chip Dimensions 1.69 x 0.75 x 0.10 mm
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TGA4036
210mA
TGA4036
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAL02VD3R3K Features Item Summary 3.3 H ±10% , 210mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm
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LAL02VD3R3K
210mA,
2000pcs
96MHz
40min
38MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2016T680K Features Item Summary 68 H(±10%), 90mA, 210mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CB2016T680K
210mA,
2000pcs
52MHz
210mA
10MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S3N8C-T Features Item Summary 3.8nH(-0.2nH to +0.2nH), 210mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ0603S3N8C-T
210mA,
15000pcs
500MHz
210mA
7500MHz
13min
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PDF
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2N7002 equivalent
Abstract: 2N7002Q-7-F
Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
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2N7002
210mA
AEC-Q101
DS11303
2N7002 equivalent
2N7002Q-7-F
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2016T150K Features Item Summary 15 H(±10%), 210mA, 440mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CB2016T150K
210mA,
440mA,
2000pcs
52MHz
210mA
440mA
28MHz
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PDF
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HHR210AH
Abstract: 2050mAh
Text: NICKEL METAL HYDRIDE BATTERIES: INDIVIDUAL DATA SHEET Typical Charge Characteristics HHR210AH Cylindrical A size HR 17/50 Dimensions (with Tube) (mm) 2.0 1.9 Charge:210mA(0.1 It)✕16hrs. 1.8 Voltage (V) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 +0 0.7 17.0 - -10˚C 25˚C
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HHR210AH
210mA
16hrs.
2050mAh
2050mAh
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)
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OCR Scan
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KM684002B,
KM684002BI
512Kx8
KM684Q02B
210mA
KM684002B
205mA
200mA
KM684002BJ
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAP02TA3R3K Features Item Summary 3.3 H ±10% , 210mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm
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LAP02TA3R3K
210mA,
2000pcs
96MHz
40min
38MHz
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PDF
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A705R
Abstract: A705NFT-210 A705T A705NFT-250 A705NFT-270 A705NFT-290 A705 A705NFT-230 DSA00251324 MARKING CODE 10c sot-89
Text: A705 200mA ~ 300mA ADVANCED CURRENT REGULATOR www.addmtek.com DESCRIPTION FEATURES The A705 is a low dropout current regulator rated for 210mA, 230mA, 250mA, 270mA, and 290mA constant sink current. The low quiescent current and low dropout voltage are achieved by advanced Bi-CMOS
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200mA
300mA
210mA,
230mA,
250mA,
270mA,
290mA
210/230/250/270/290mA
OT-89
O-252
A705R
A705NFT-210
A705T
A705NFT-250
A705NFT-270
A705NFT-290
A705
A705NFT-230
DSA00251324
MARKING CODE 10c sot-89
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S5N1C-T Features Item Summary 5.1nH(-0.2nH to +0.2nH), 210mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ0603S5N1C-T
210mA,
15000pcs
500MHz
210mA
5900MHz
13min
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PDF
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optical millimeter wave optical
Abstract: K-04211GX-P
Text: K-04211GX-P LCD BACK LIGHT, COB TYPE, LCD CHARACTER 20 X 2 Part No. Luminous Area mm K-04211GX-P 20.0X85.0mm Chip Raw Material Emitted Color GaP Yellow Green Wave Length λp(nm) 570 Electro-Optical Characteristics 2 Iv(cd/m ) Input Current Typ. IF =210mA
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K-04211GX-P
K-04211GX-P
210mA
K-05205GX
K-05205GX
260mA
optical millimeter wave optical
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM616513 32,768 WORD x 16 BIT High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 5 ,1 7 ,2 0 ,25ns max. • Low Power Dissipation Standby (TTL) : 50 mA (max.) (CMOS): 1mA (max.) Operating KM616513-15 :210mA (max.) KM616513-17 : 200mA (max.)
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OCR Scan
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KM616513
KM616513-15
210mA
KM616513-17
200mA
KM616513-20
190mA
KM616513-25
180mA
KM616513J
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PDF
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Untitled
Abstract: No abstract text available
Text: .875MAX.- - I- .400 MAX . v .210MAX. BLUE BEAD I rl1 1'\ Ill r"\ ='~ ~ ~ ='» u ='» ~LI\J .I ~ - t]l'\ 11 =c "' M.I\J 11.1. .030 •.002 DIA COIL RESISTANCE NOMINAL VOLT AGE MUST OPERATE MUST RELEASE SHOCK 10 100 TEMPERATURE g•s -65 6 •c .200 I I BLUE BEAD/
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875MAX
210MAX.
800MAX.
B/7/92
FW1101GOO
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T151K Features Item Summary 150 H(±10%), 55mA, 210mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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CB2518T151K
210mA,
2000pcs
796MHz
210mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T151K Features Item Summary 150 H(±10%), 55mA, 210mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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CB2518T151K
210mA,
2000pcs
796MHz
210mA
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PDF
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k72 diode
Abstract: No abstract text available
Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
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Original
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2N7002
210mA
AEC-Q101
DS11303
k72 diode
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PDF
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d5101
Abstract: C5VI
Text: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM 2S6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17, 20ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : tOmA(Max ) Operating KM6164002A -1 5 : 210mA(Max.)
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OCR Scan
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KM6164002A,
KM6164002AE,
KM6164002AI
KM6164002A
210mA
205mA
200mA
KM6164002AJ
d5101
C5VI
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PDF
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TGA4036
Abstract: No abstract text available
Text: Advance Product Information December 9, 2004 19 - 38GHz Medium Power Amplifier TGA4036 Key Features • • • • • • • Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA 210mA @ P1dB 0.25 um 3MI pHEMT Technology
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38GHz
TGA4036
210mA
TGA4036
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T151K Features Item Summary 150 H(±10%), 55mA, 210mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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CB2518T151K
210mA,
2000pcs
796MHz
210mA
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PDF
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