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    2106F Search Results

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    2106F Price and Stock

    NXP Semiconductors LPC2106FBD48-01,15

    IC MCU 16/32B 128KB FLASH 48LQFP
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    DigiKey LPC2106FBD48-01,15 Tray 505 1
    • 1 $24.77
    • 10 $19.905
    • 100 $17.53463
    • 1000 $16.33228
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    Hammond Manufacturing PJU12106F

    BOX FIBERGLASS 12.5"L X 10.72"W
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    DigiKey PJU12106F Box 1 1
    • 1 $157.11
    • 10 $157.11
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    Mouser Electronics PJU12106F 2
    • 1 $146.66
    • 10 $141.42
    • 100 $136.18
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    Newark PJU12106F Bulk 14 1
    • 1 $152.53
    • 10 $147.08
    • 100 $141.63
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    RS PJU12106F Bulk 2 1
    • 1 $155.58
    • 10 $147.8
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    Powell Electronics PJU12106F 8 1
    • 1 $188.58
    • 10 $188.58
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    Rochester Electronics LLC MC2106F

    GATE, TTL
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    DigiKey MC2106F Bulk 14
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    • 100 $22.27
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    JRH Electronics PJU12106F

    BOX FIBERGLASS 12.5"L X 10.72"W
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    DigiKey PJU12106F Box 1
    • 1 $290.13
    • 10 $290.13
    • 100 $248.1275
    • 1000 $248.1275
    • 10000 $248.1275
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    Hammond Manufacturing PCJ12106F

    JUNCT BOX PLAS 10.72"L X 7.19"W
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    DigiKey PCJ12106F Bulk 1
    • 1 $108.31
    • 10 $108.31
    • 100 $108.31
    • 1000 $108.31
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    Mouser Electronics PCJ12106F 13
    • 1 $101.44
    • 10 $100.26
    • 100 $100.26
    • 1000 $100.26
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    Newark PCJ12106F Bulk 14 1
    • 1 $105.57
    • 10 $105.39
    • 100 $105.39
    • 1000 $105.39
    • 10000 $105.39
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    RS PCJ12106F Bulk 1
    • 1 $103.22
    • 10 $88.77
    • 100 $88.77
    • 1000 $88.77
    • 10000 $88.77
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    Powell Electronics PCJ12106F 4 1
    • 1 $118.16
    • 10 $118.16
    • 100 $118.16
    • 1000 $118.16
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    2106F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2106F Voltage Multipliers Center Tap or Doubler, High Current, 70nS, 150nS, 3000nS Recovery Scan PDF
    2106FN Voltage Multipliers Center Tap or Doubler, High Current, 70nS, 150nS, 3000nS Recovery Scan PDF
    2106FP Voltage Multipliers Center Tap or Doubler, High Current, 70nS, 150nS, 3000nS Recovery Scan PDF

    2106F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2106FP Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current25 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9


    Original     		2106FP Current25 Voltage600 Time150n Current20u PDF

    Untitled

    Abstract: No abstract text available
    Text: 2106F Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9


    Original     		2106F Current12 Voltage600 Time150n Current20u PDF

    Untitled

    Abstract: No abstract text available
    Text: 2106FN Diodes Center-Tapped Negative CA HS Rectifier I(O) Max.(A) Output Current25 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9


    Original     		2106FN Current25 Voltage600 Time150n Current20u PDF

    2106F

    Abstract: RN1101FS RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS ib20
    Text: RN2101FS~2106FS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,2106FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original     		RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS 2106F RN1106FS RN2103FS RN2106FS ib20 PDF

    2106F

    Abstract: RN2101FRN2106F RN2101F 2104F RN1101F RN1106F RN2102F RN2103F RN2104F RN2105F
    Text: RN2101F~2106F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101F,RN2102F,RN2103F RN2104F,RN2105F,2106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design


    Original     		RN2101F RN2106F RN2102F RN2103F RN2104F RN2105F RN1101F RN1106F 2106F RN2101FRN2106F 2104F RN1106F RN2103F PDF

    TRANSISTOR MARKING YB

    Abstract: No abstract text available
    Text: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


    Original     		RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT TRANSISTOR MARKING YB PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


    Original     		RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2101FS~2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05


    Original     		RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm


    Original     		RN1101FT RN1106FT RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN2101FT 2106FT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm


    Original     		RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT 1106FT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2101FV~2106FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101FV,RN2102FV,RN2103FV RN2104FV,RN2105FV,2106FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 With built-in bias resistors


    Original     		RN2101FVâ RN2106FV RN2101FV RN2102FV RN2103FV RN2104FV RN2105FV RN1101FV RN1106FV PDF

    RN2103FV

    Abstract: RN2104FV RN2105FV RN2106FV RN1101FV RN1106FV RN2101FV RN2102FV
    Text: RN2101FV~2106FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, 2106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.32±0.05 Built-in bias resistors


    Original     		RN2101FVRN2106FV RN2101FV, RN2102FV, RN2103FV RN2104FV, RN2105FV, RN2106FV RN1101FV RN1106FV RN2101FV RN2103FV RN2104FV RN2105FV RN2106FV RN1106FV RN2101FV RN2102FV PDF

    2106F

    Abstract: 2104F RN1101F RN1106F RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F
    Text: RN2101F~2106F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101F,RN2102F,RN2103F RN2104F,RN2105F,2106F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design


    Original     		RN2101FRN2106F RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F RN1101F RN1106F RN2101F 2106F 2104F RN1106F RN2103F RN2106F PDF

    RN1101FS

    Abstract: RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS
    Text: RN2101FS~2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


    Original     		RN2101FS RN2106FS RN2102FS RN2103FS RN2104FS RN2105FS RN1101FS RN1106FS RN1106FS RN2103FS RN2106FS PDF

    RN1101FT

    Abstract: RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
    Text: RN2101FT~2106FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, 2106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original     		RN2101FT RN2106FT RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN1101FT 1106FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT PDF

    RN2101FT

    Abstract: RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
    Text: RN2101FT~2106FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, 2106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original     		RN2101FT RN2106FT RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN1101FT 1106FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT PDF

    2106f

    Abstract: RN2101F 2104F RN1101F RN1106F RN2102F RN2103F RN2104F RN2105F RN2106F
    Text: RN2101F~2106F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101F,RN2102F,RN2103F RN2104F,RN2105F,2106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design


    Original     		RN2101FRN2106F RN2101F RN2102F RN2103F RN2104F RN2105F RN2106F RN1101F RN1106F RN2101F 2106f 2104F RN1106F RN2103F RN2106F PDF

    TRANSISTOR MARKING YB

    Abstract: RN2101FT RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1101FT RN1106FT RN2102FT RN2104FT RN2105FT RN2106FT
    Text: RN2101FT~2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


    Original     		RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT TRANSISTOR MARKING YB RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1106FT RN2106FT PDF

    RN2101FT

    Abstract: RN1101FT RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT
    Text: RN1101FT~RN1106FT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1101FT,RN1102FT,RN1103FT RN1104FT,RN1105FT,RN1106FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original     		RN1101FT RN1106FT RN1102FT RN1103FT RN1104FT RN1105FT RN2101FT 2106FT RN1103FT RN1106FT PDF

    2106F

    Abstract: working of voltage doubler 2108F 2102F 2102UF 2104F 2104UF 2106UF 2108UF 2110UF
    Text: b3E D tsimas 4 00004?^ m i 2102 2104 2106 2108 2110 CENTER TAP OR DOUBLER HIGH CURRENT 70nS*150nS»3000nS RECOVERY = 21 - 25A Positive Center Tap AC N W AC Negative Center Tap AC H * N AC 2102F 2104F 2106F 2108F 211OF 2102UF 2104UF 2106UF 2108UF 2110UF Assemblies available with


    OCR Scan     		150nS 3000nS 2102F 2102UF 2104F 2104UF 2106F 2106UF 2108F 2108UF working of voltage doubler 2102UF 2104UF 2106UF 2108UF 2110UF PDF

    Untitled

    Abstract: No abstract text available
    Text: b3E D tsimas 4 00004?^ m i CENTER TAP OR DOUBLER HIGH CURRENT 70nS*150nS»3000nS RECOVERY 2102 2104 2106 2108 2110 = 21 - 25A Positive Center Tap AC N W AC Negative Center Tap AC H * N AC 2102F 2104F 2106F 2108F 211 OF 2102UF 2104UF 2106UF 2108UF 2110UF Assemblies available with


    OCR Scan     		2102F 2104F 2106F 2108F 2102UF 2104UF 2106UF 2108UF 2110UF 150nS PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2101F-2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, 2106F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.1 With Built-in Bias Resistors


    OCR Scan     		RN2101F-RN2106F RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F RN1101F RN1106F RN2101F PDF

    Untitled

    Abstract: No abstract text available
    Text: VOLTAGE MULTIPLIERS INC S7E D • ‘ISIMÛSM Q00024Q SIS «VIII CENTER TAP OR DOUBLER 70nS • 150nS • 3000nS Recovery ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Vrwm Reverse Current @ VRWM


    OCR Scan     		Q00024Q 150nS 3000nS PDF

    2106F

    Abstract: No abstract text available
    Text: VOL TAG E M U L T I P L I E R S INC 34E » • 'ISIMÔSM G D G 0 2 1 3 3 ■ VMI '“" P ‘2 3 -0 ' 7 Center Tap or Doubler Da ta subject to change w ithout notice. M A X IM U M R A T IN G S A N D C H A R A C T E R IS T IC S PART WORKING NUMBER REVERSE VOLTAGE


    OCR Scan     		HRP101 2106F PDF