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    20V P-CHANNEL POWER MOSFET HIGH CURRENT Search Results

    20V P-CHANNEL POWER MOSFET HIGH CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    20V P-CHANNEL POWER MOSFET HIGH CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AAT7157

    Abstract: AAT7157IAS-T1
    Text: AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in


    Original     		PDF AAT7157 AAT7157 AAT7157IAS-T1 AAT7157IAS-T1

    TA 7157

    Abstract: Dual P-Channel MOSFET AAT7157 AAT7157IAS-T1 P-channel POWER p-channel power mosfet 58a4
    Text: AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 low threshold 20V, dual P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT7157 is designed for use as a load switch in


    Original     		PDF AAT7157 AAT7157 TA 7157 Dual P-Channel MOSFET AAT7157IAS-T1 P-channel POWER p-channel power mosfet 58a4

    RD10

    Abstract: AAT8113 AAT8113IAS-T1 diode BY 028 20V P-Channel Power MOSFET
    Text: AAT8113 20V P-Channel Power MOSFET General Description Features The AAT8113 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8113 is designed for use as a load switch in


    Original     		PDF AAT8113 AAT8113 RD10 AAT8113IAS-T1 diode BY 028 20V P-Channel Power MOSFET

    20V P-Channel Power MOSFET

    Abstract: p-CHANNEL POWER MOSFET MARKING 8107 SOP8 8107 AAT8107 AAT8107IAS-T1
    Text: AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8107 is designed for use as a load switch in


    Original     		PDF AAT8107 AAT8107 20V P-Channel Power MOSFET p-CHANNEL POWER MOSFET MARKING 8107 SOP8 8107 AAT8107IAS-T1

    RD10

    Abstract: AAT8113 AAT8113IAS-T1
    Text: AAT8113 20V P-Channel Power MOSFET General Description Features The AAT8113 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8113 is designed for use as a load switch in


    Original     		PDF AAT8113 AAT8113 RD10 AAT8113IAS-T1

    P-CHANNEL POWER MOSFET

    Abstract: TA 7157 AAT7157 AAT7157IAS-T1 7157 mosfet
    Text: AAT7157 20V P-Channel Power MOSFET General Description Features The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech 's TrenchDMOS™ product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in


    Original     		PDF AAT7157 AAT7157 P-CHANNEL POWER MOSFET TA 7157 AAT7157IAS-T1 7157 mosfet

    AAT8543

    Abstract: AAT8543IJS-T1 SC70JW-8
    Text: AAT8543 20V P-Channel Power MOSFET General Description Features The AAT8543 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead


    Original     		PDF AAT8543 AAT8543 SC70JW-8 AAT8543IJS-T1

    at 8515

    Abstract: AAT8515 AAT8515IJS-T1 SC70JW-8 mosfet 23 Tsop-6 150C1
    Text: AAT8515 20V P-Channel Power MOSFET General Description Features The AAT8515 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead


    Original     		PDF AAT8515 AAT8515 SC70JW-8 at 8515 AAT8515IJS-T1 mosfet 23 Tsop-6 150C1

    8107

    Abstract: AAT8107 AAT8107IAS-T1 MARKING 8107 SOP8
    Text: AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 low threshold 20V, P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT8107 is designed for use as a load switch in battery powered applications and protection in battery packs.


    Original     		PDF AAT8107 AAT8107 1E-04 1E-03 1E-02 1E-01 AAT8107IAS-T1 8107 AAT8107IAS-T1 MARKING 8107 SOP8

    AAT8107

    Abstract: AAT8107IAS-T1
    Text: AAT8107 20V P-Channel Power MOSFET General Description Features The AAT8107 low threshold 20V, P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT8107 is designed for use as a load switch in battery-powered applications and protection in battery packs.


    Original     		PDF AAT8107 AAT8107 AAT8107IAS-T1

    ADVANCED ANALOGIC TECHNOLOGY

    Abstract: AAT8343 AAT8343IDU-T1
    Text: AAT8343 20V P-Channel Power MOSFET General Description Features The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density proprietary TrenchDMOS technology, this product


    Original     		PDF AAT8343 AAT8343 ADVANCED ANALOGIC TECHNOLOGY AAT8343IDU-T1

    AAT8343

    Abstract: AAT8343IDU-T1
    Text: AAT8343 20V P-Channel Power MOSFET General Description Features The AAT8343 is a low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density proprietary TrenchDMOS technology, this product


    Original     		PDF AAT8343 AAT8343 AAT8343IDU-T1

    Untitled

    Abstract: No abstract text available
    Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V


    Original     		PDF CMT2301 CMT2301 -20V/-2 -20V/-1 OT-23-3

    CMC lcd

    Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
    Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V


    Original     		PDF CMT2301 CMT2301 -20V/-2 -20V/-1 OT-23-3 CMC lcd p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301GM233 CMT2301M233

    CMC lcd

    Abstract: sot-23 P-Channel MOSFET CMT2301 CMT2301GM233 CMT2301M233
    Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode ‹ -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell ‹ -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V


    Original     		PDF CMT2301 CMT2301 -20V/-2 -20V/-1 OT-23-3 CMC lcd sot-23 P-Channel MOSFET CMT2301GM233 CMT2301M233

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2035Z Power MOSFET -3.6A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET 3  DESCRIPTION The UTC UT2035Z is a P-channel enhancement mode MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate


    Original     		PDF UT2035Z UT2035Z OT-23 SC-59) UT2035ZL-AE3-R QW-R502-937

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2035Z Power MOSFET -3.6A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET 3  DESCRIPTION The UTC UT2035Z is a P-channel enhancement mode MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate


    Original     		PDF UT2035Z UT2035Z OT-23 SC-59) UT2035ZG-AE3-R QW-R502-937

    LT2323E

    Abstract: mosfet vgs 5v SOT23 LT232
    Text: LT2323E P-Channel 20-V D-S MOSFET GENERAL DESCRIPTION FEATURES The LT2323E is the P-Channel logic enhancement mode power field ● -20V/-4A,RDS(ON)=50mΩ@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench ● -20V/-3A,RDS(ON)=65mΩ@VGS=-2.5V


    Original     		PDF LT2323E LT2323E -20V/-4A -20V/-3A -20V/-2A 300us, OT-23 mosfet vgs 5v SOT23 LT232

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2035Z Preliminary Power MOSFET -3.6A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET 3  DESCRIPTION 2 The UTC UT2035Z is a P-channel enhancement mode MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate


    Original     		PDF UT2035Z UT2035Z OT-23 SC-59) UT2035ZL-AE3-R QW-R502-937

    RD10

    Abstract: AAT8303 AAT8303ITS-T1
    Text: AAT8303 20V P-Channel Power MOSFET General Description Features The AAT8303 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AATI's proprietary ultra-high density Trench technology, and space saving small outline J-lead package, performance superior to that


    Original     		PDF AAT8303 AAT8303 RD10 AAT8303ITS-T1

    High power led driver

    Abstract: LSP7502 pwm power led driver circuit 36V 3A led power led driver
    Text: LSP7502 20V/3A High Power LED Driver Features Input voltage: 3.6V to 20V 0.2V Low feedback Voltage Duty ratio: 0% to 100% PWM control Oscillation frequency: 500KHz typ Soft-start, Current limit, Enable function Thermal Shutdown function Built-in internal SW P-channel MOSFET


    Original     		PDF LSP7502 500KHz LSP7502 50KHz. High power led driver pwm power led driver circuit 36V 3A led power led driver

    High power led driver

    Abstract: LSP7501 PWM control LED PWM DRIVER CIRCUIT power led driver 3.6v led driver circuit
    Text: LSP7501 20V/2A High Power LED Driver Features Input voltage: 3.6V to 20V 0.2V Low feedback Voltage Duty ratio: 0% to 100% PWM control Oscillation frequency: 500KHz typ Soft-start, Current limit, Enable function Thermal Shutdown function Built-in internal SW P-channel MOSFET


    Original     		PDF LSP7501 500KHz LSP7501 50KHz. High power led driver PWM control LED PWM DRIVER CIRCUIT power led driver 3.6v led driver circuit

    A93V

    Abstract: AAT8401 AAT8401IGY-T1 SC59
    Text: AAT8401 20V P-Channel Power MOSFET General Description Features The AAT8401 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech ’s ultra high density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT8401 AAT8401 A93V AAT8401IGY-T1 SC59

    AAT8343

    Abstract: AAT8343IDU-T1
    Text: AAT8343 20V P-Channel Power MOSFET General Description Features The AAT8343 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size.


    Original     		PDF AAT8343 AAT8343 AAT8343IDU-T1