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    20QA Search Results

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    PanJit Group SBA0520Q-AU_R1_000A1

    EXTREME LOW VF SCHOTTKY RECTIFIE
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    DigiKey SBA0520Q-AU_R1_000A1 Reel 16,000 8,000
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    • 10000 $0.04545
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    SBA0520Q-AU_R1_000A1 Cut Tape 5,974 1
    • 1 $0.35
    • 10 $0.214
    • 100 $0.1341
    • 1000 $0.0882
    • 10000 $0.07873
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    Ozdisan Elektronik SBA0520Q-AU_R1_000A1
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    • 10 $0.07759
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    • 1000 $0.07759
    • 10000 $0.0636
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    TAW Electronics, Inc. SMDTD03220QA00KS00

    SMD-PET 0.22 UF 100 VDC 5.7X5.1X
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMDTD03220QA00KS00 Bulk 4,500 10
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    TT electronics / BI Technologies P160KN2-0QA25B10K

    POT 10K OHM 1/5W PLASTIC LINEAR
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    DigiKey P160KN2-0QA25B10K Tray 2,861 1
    • 1 $1.83
    • 10 $1.611
    • 100 $1.33325
    • 1000 $1.02767
    • 10000 $0.83325
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    Bristol Electronics P160KN2-0QA25B10K 40 2
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    • 100 $1.875
    • 1000 $1.875
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    TAW Electronics, Inc. SMDND03220QA00KP00

    SMD-PEN 0.22 UF 100 VDC 5.7X5.1X
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    DigiKey SMDND03220QA00KP00 Reel 2,000 500
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    Wima SMDTC03220QA00KP00

    CAP FILM 0.22UF 10% 40VAC 2220
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    DigiKey SMDTC03220QA00KP00 Reel 1,500 500
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    • 10000 $0.40616
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    SMDTC03220QA00KP00 Cut Tape 240 1
    • 1 $1.14
    • 10 $0.857
    • 100 $0.6408
    • 1000 $0.6408
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    Mouser Electronics SMDTC03220QA00KP00 1,106
    • 1 $1.15
    • 10 $0.8
    • 100 $0.641
    • 1000 $0.451
    • 10000 $0.383
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    Newark SMDTC03220QA00KP00 Cut Tape 1,386 1
    • 1 $1.2
    • 10 $0.832
    • 100 $0.667
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    Avnet Abacus SMDTC03220QA00KP00 12 Weeks 2,500
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    20QA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIODE NON-ISOLATED TYPE MDF(R)20QA M D F(R )200A is a diode with flat mounting base which is designed for use in various rectifier applications. • If(av) = 200A, VrrM= 500V • Easy Construction with Anode (F) Type and Cathode (R) Type. • High reliability by glass passivation


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    PDF 200A50 B-153 B-154

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    PDF IRGBC20UD2 application16 TQ-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200


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    PDF O-252AA 140ns 4AS54S2

    IRGKI200F06

    Abstract: IGBT FF 300 l200a
    Text: International lü Rectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CH O PPER “ IGBT INT-A-PAK V CE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"


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    PDF 10KHz 50KHz IRGKI200F06 C-188 IRGKI200F06 IGBT FF 300 l200a

    transistor C946

    Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
    Text: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses


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    PDF IRGPC40KD2 C-951 O-247AC C-952 transistor C946 C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor

    GE rcrt

    Abstract: ov8d AY 5 3500
    Text: L A 7 b 7 U : features & runcuuus [V IF ] * PLL type video d etecto r fo r the high p ictu re & sound q u a lity * High gain V IF amp Pre-amp unnecessary * High speed ACC * B u ilt in APC tim e constant SW [S IF ] * Audio IN/OUT a t same time * Yideo/Audio sim u ltan eojs muting, or audio-only muting possible


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    PDF 734KHz GE rcrt ov8d AY 5 3500

    thyristor CR6AM

    Abstract: CR6AM
    Text: MITSUBISHI THYRISTOR CR6AM MEDIUM POW ER, G EN ERAL USE LEAD-MOUNTED, GLASS- PASSIVATION T Y P E D E S C R IP T IO N O U T L IN E D R A W IN G D im e n sio n : m m Mitsubishi type C R 6 A M -1 ~ 1 2 are glass-passivated junction type thyristors for use in low. power and high voltage control.


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    PDF 20Qa- 10mA- thyristor CR6AM CR6AM

    Untitled

    Abstract: No abstract text available
    Text: PD-2.471 bitemational ^Rectifier HFA80NC40CSM Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features V r = 400V cJ • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I , -H 1 V F = 1 .3 V Qrr * = 5 0 0 n C


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    PDF HFA80NC40CSM Saalburgstrasse157 37066IR Liguria49 0GEn55

    200a 300v mosfet

    Abstract: No abstract text available
    Text: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated


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    PDF IRGTDN200K06 C-460 GD2025D 200a 300v mosfet

    ULTRA fast rectifier diode 15A 200V anode common

    Abstract: common anode 600v ULTRA fast rectifier diode 30A 200V anode common 200A1 HFA35HA60C 200V 30A TRANSISTOR
    Text: International PD-2.378 Provisional Data Sheet [^Rectifier HFA35HA60C HEXFRED u l t r a f a s t, s o f t RECOVERY DIODE Major Ratings and Characteristics Features: trr per leg 60 ns — — — — — — — — Qrr (per leg) 180 nC Benefits; 6 A 1.7


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    PDF HFA35HA60C 00A/fis, 200AIfS, TQ-204AA ULTRA fast rectifier diode 15A 200V anode common common anode 600v ULTRA fast rectifier diode 30A 200V anode common 200A1 200V 30A TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: NMT SERIES Triple O utput 3W DC-DC Converters w ith Shutdown features □ Triple Outputs -24V, -4 8 V & -72V TTL/CM OS Compatible O N /O FF Control Toroidal Magnetics Input/Output Isolation 1kVDC Power Sharing on Outputs n Internal SMD Construction n Industrial Temperature Range


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    PDF NMT0572SZ

    IT71

    Abstract: WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122
    Text: International S Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz


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    PDF IRGMVC50U 20kHz O-258AA IROWC50U0 IRGMVC50UU WI-S-19SM O-258 IT71 WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750


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    PDF QM200DY-24B QM2000Y-24B E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses


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    PDF IRGPC50MD2 -10ps 10kHz) C-405 O-247AC C-406

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER ZOR 'T 73 DE'| 4Û55452 □□DLTll 1 Data Sheet No. PD-3.139 in t e r n a t io n a l r e c t if ie r S18CF & S18CFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 jus 125 AMP RMS, CENTER AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs


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    PDF S18CF S18CFH S18CF S18CFH 4ASS452

    Untitled

    Abstract: No abstract text available
    Text: PD-2.338 International iliRectifier HEXFRED Provisional Data Sheet HFA25PB60 Major Ratings and Characteristics Units Characteristics 600 V 'F AV 25 A trr (typ) 23 ns Qrr (typ) 112 nC 10 A di(rec)M/dt (typ) 250 AJa$ VF 1.7 V Vr vrrm IRRM 600V, 25A ULTRA FAST, SOFT RECOVERY DIODE


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    PDF HFA25PB60 HFA25PB60 D-6300

    Untitled

    Abstract: No abstract text available
    Text: u im 28MHz, 12V/|is, Single Supply TECHNOLOGY LT1213/LT1214 Dual and Quad Precision Op Amps F€ R TU R € S D € S C R IP T IO n • Slew Rate 12V/nsTyp ■ Gain-Bandwidth Product 28MHzTyp ■ Fast Settling to 0.01% 2V Step to 200 xV 500ns Typ 10V Step to 1mV


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    PDF 28MHz, LT1213/LT1214 28MHzTyp 500ns 200nA 200V/mVMin 10nV/VFizTyp

    ANSI 45 rectifier

    Abstract: transistor f 3009 transistor BA RW transistor k30 hexfred hf*C HFA45HI60C international rectifier 2120 IR 2120
    Text: International IOR Rectifier HEXFRED PD-2.380 Provisional Data Sheet HFA45HI60C ULTRA FAST, s o f t r e c o v e r y d iod e Features: Major Ratings and Characteristics Characteristics 600V, 45A — — — — — — — Ultrafast Recovery Ultra Soft Recovery


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    PDF HFA45HI60C HFA45HC60CD HFA45HC60CU O-258 HFA4SHH20CD HFA45HI120CU O-259 ANSI 45 rectifier transistor f 3009 transistor BA RW transistor k30 hexfred hf*C international rectifier 2120 IR 2120

    transistor c964

    Abstract: E 5032 TI transistor D 5032 C970
    Text: PD - 5.032 bitemational [kh*1Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated • 10ps @ 125°C, Vge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all ’tail” losses


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    PDF CPV362MK 360Vdc, C-969 C-970 transistor c964 E 5032 TI transistor D 5032 C970

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC 00 GP R 1G H T S R E S E RV E D. R EV 1S I O N S DIST P - S I G N A L S E C ON D A R Y LOCK PART NUMBER I 6 0 0 9 0 2 - I


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    PDF 23JUN2009 150CT2009 ECR-09-022624 28SEP2009 I0MAY05

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    PDF

    200a 300v mosfet

    Abstract: No abstract text available
    Text: Provisional Dd.tsi Sh ôt PD*9.1198 1°R Rectifier IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“ losses •Short circuit rated


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    PDF IRGTDN200K06 C-460 200a 300v mosfet

    SG800GXH24

    Abstract: No abstract text available
    Text: TO SHIBA SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR <;r;ann ;YH7A Unit in mm INVERTER APPLICATION • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage


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    PDF SG800GXH24 500mA SG800GXH24

    30ct0045

    Abstract: SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m
    Text: Forward voltage drop is a function of the Schottky's reverse voltage rating. The maximum voltage rating of today’s Schottky rectifiers is about 150V. At this voltage, the Schottky’s forward voltage drop is lower than that of a fast recovery epitaxial PN junction rectifier by 150 to


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    PDF 200mV. 30ct0045 SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m