IS-136
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG132G L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
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PG132G
PG132G
IS-136
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diagram of isl ic
Abstract: IS-136 UPG133G 131G
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
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PG133G
UPG133G
diagram of isl ic
IS-136
131G
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Untitled
Abstract: No abstract text available
Text: FDPC8016S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to
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FDPC8016S
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Untitled
Abstract: No abstract text available
Text: FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to
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FDPC8014S
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Untitled
Abstract: No abstract text available
Text: FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to
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FDPC8014S
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