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    20N80P Search Results

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    20N80P Price and Stock

    Littelfuse Inc IXFR20N80P

    MOSFET N-CH 800V 11A ISOPLUS247
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    DigiKey IXFR20N80P Tube 300
    • 1 -
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    • 1000 $8.8972
    • 10000 $8.8972
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    IXYS Corporation IXFC20N80P

    MOSFET N-CH 800V 11A ISOPLUS220
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    DigiKey IXFC20N80P Tube
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    IXYS Corporation IXFT20N80P

    MOSFET N-CH 800V 20A TO268
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    DigiKey IXFT20N80P Tube
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    Mouser Electronics IXFT20N80P
    • 1 $8.03
    • 10 $6.89
    • 100 $6.25
    • 1000 $5.05
    • 10000 $4.55
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    TME IXFT20N80P 1
    • 1 $6.62
    • 10 $5.26
    • 100 $4.73
    • 1000 $4.73
    • 10000 $4.73
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    Littelfuse Inc IXFH20N80P

    MOSFET N-CH 800V 20A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH20N80P Tube 1
    • 1 $10.16
    • 10 $10.16
    • 100 $8.11433
    • 1000 $6.40618
    • 10000 $5.76556
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    IXYS Corporation IXFV20N80P

    MOSFET N-CH 800V 20A PLUS220
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    DigiKey IXFV20N80P Tube
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    Find more 20N80P price and stock on Findchips.com

    20N80P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20N80P

    Abstract: S-100F 20N80 C2036 QG SMD TRANS PLUS220SMD ixfh20n80p
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV VDSS ID25 20N80P 20N80P 20N80P 20N80PS RDS on trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 20N80P 20N80PS O-247AD O-268 PLUS220 PLUS220SMD 3-01-06-A 20N80P S-100F 20N80 C2036 QG SMD TRANS PLUS220SMD ixfh20n80p

    20N80

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns RDS on trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 20N80P 20N80PS -55awings O-247AD O-268 PLUS220 PLUS220SMD 20N80

    20N80

    Abstract: ISOPLUS247 G-1000C
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = 800 V ID25 = 10 A Ω RDS on ≤ 500 mΩ ≤ 250 ns trr IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 20N80P 8-23-06B 20N80 ISOPLUS247 G-1000C

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = 800 V ID25 = 10 A Ω RDS on ≤ 500 mΩ ≤ 250 ns trr IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 20N80P 8-23-06B

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2