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    20N60C5 Search Results

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    20N60C5 Price and Stock

    IXYS Corporation IXKP20N60C5

    MOSFET N-CH 600V 20A TO220AB
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    IXYS Corporation IXKH20N60C5

    MOSFET N-CH 600V 20A TO247AD
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    TME IXKH20N60C5 239 1
    • 1 $7
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    IXYS Corporation IXKP20N60C5M

    MOSFET N-CH 600V 7.6A TO220ABFP
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    Mouser Electronics IXKP20N60C5M
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    TME IXKP20N60C5M 1
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    IXYS Integrated Circuits Division IXKH20N60C5

    MOSFET DIS.20A 600V N-CH TO247-3 COOLMOS THT
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    Ozdisan Elektronik IXKH20N60C5
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    IXYS Integrated Circuits Division IXKP20N60C5

    MOSFET DIS.20A 600V N-CH TO220 COOLMOS THT
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    Ozdisan Elektronik IXKP20N60C5
    • 1 $3.09012
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    20N60C5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c5

    Abstract: DSA003709
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 20N60C5 O-247 O-220 20070625a DSA003709

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET


    Original     		PDF 20N60C5 O-247 O-220 20080523d

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original     		PDF 20N60C5M O-220 20070704a

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 20N60C5M O-220

    20n60c5

    Abstract: IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N
    Text: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original     		PDF 20N60C5 O-247 O-220 20080523d 20n60c5 IXKH20N60C5 20n60c IXKP20N60C5 20n60c* equivalent 20n60 K 739 mosfet MOSFET "symbol 7V" MOSFET N

    20n60c5

    Abstract: 20n60c5m
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20090209d 20n60c5 20n60c5m

    Untitled

    Abstract: No abstract text available
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20090209d

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original     		PDF 20N60C5 O-247 O-220 20080310c

    20n60c5

    Abstract: No abstract text available
    Text: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 20N60C5M O-220 20080523c 20n60c5

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 20N60C5 O-247 O-220 20070625a

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information ID25 = 20 A = 600 V VDSS RDS on max = 0.2 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G


    Original     		PDF 20N60C5 20N60C5 O-247 O-220 Appli300

    Untitled

    Abstract: No abstract text available
    Text: IXKH 20N60C5 IXKP 20N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 20 A VDSS = 600 V RDS on max = 0.2 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP)


    Original     		PDF 20N60C5 O-247 O-220