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    20N60C3 MARKING Search Results

    20N60C3 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    20N60C3 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20N60C3

    Abstract: Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60
    Text: Final data SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60

    20N60C3

    Abstract: 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3

    20N60C3

    Abstract: Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING SPI20N60C3
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550 20n60c3 TO-247 20n60c3 transistor SPD06S60 20N60C3 MARKING

    20n60c3

    Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
    Text: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		PDF SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60

    20N60C3

    Abstract: Q67040-S4550
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 SPA20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550

    20n60c3

    Abstract: No abstract text available
    Text: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best R DS on in TO 220 • Ultra low gate charge R DS(on) 0.19 Ω ID 20.7


    Original     		PDF SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3

    20n60c3

    Abstract: spp20n60c3 SPB20N60C3
    Text: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		PDF SPP20N60C3, SPB20N60C3 SPA20N60C3 SPP20N60C3 SPA20N60C3 P-TO220-3-1 P-TO263-3-2 P-TO220-3-31 20n60c3

    20N60C3

    Abstract: SPB20N60C3 diode marking G36
    Text: SPP20N60C3 SPB20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPP20N60C3 SPB20N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4398 Q67040-S4397 20N60C3 SPB20N60C3 diode marking G36

    20n60c3

    Abstract: 20N60C3 equivalent spp20n60c3 TRANSISTOR SMD MARKING CODE SPB20N60C3 spp20n60 TRANSISTOR SMD MARKING CODE 7A SDP06S60 Q67040-S4397 smd 20n60c3
    Text: SPP20N60C3 SPB20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPP20N60C3 SPB20N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4398 20N60C3 20n60c3 20N60C3 equivalent spp20n60c3 TRANSISTOR SMD MARKING CODE SPB20N60C3 spp20n60 TRANSISTOR SMD MARKING CODE 7A SDP06S60 Q67040-S4397 smd 20n60c3

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
    Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3
    Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A •=High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3

    20N60C3 equivalent

    Abstract: 20N60C3 SPW20N60C3 tp 2116 20n60c TO-247 SDP06S60
    Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 equivalent 20N60C3 SPW20N60C3 tp 2116 20n60c TO-247 SDP06S60

    20n60c3

    Abstract: transistor 20N60c3 diode marking G36
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 transistor 20N60c3 diode marking G36

    20n60c3

    Abstract: SPA20N60C3 transistor 20N60c3 Q67040-S4410
    Text: SPA20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		PDF SPA20N60C3 P-TO220-3-31 20N60C3 P-TO220-3-31 Q67040-S4410 20n60c3 SPA20N60C3 transistor 20N60c3 Q67040-S4410

    20N60C3

    Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3

    SPW20N60C3

    Abstract: transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 SPW20N60C3 transistor 20N60c3

    20n60c3

    Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60

    diode marking G36

    Abstract: SPW20N60C3 20N60C3 SPW20N60C3 20n60c3
    Text: SPW20N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability


    Original     		PDF SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 diode marking G36 SPW20N60C3 20N60C3 SPW20N60C3 20n60c3