PNP TRANSISTOR 1k
Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A
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-120V
MJ11016
-120V;
PNP TRANSISTOR 1k
transistor 20a
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
MJ11015
MJ11016
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mj11011
Abstract: transistor 20a MJ11012 20A pnp
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A
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MJ11012
mj11011
transistor 20a
MJ11012
20A pnp
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COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
Abstract: transistor 20a MJ11013 MJ11014
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A
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MJ11014
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
transistor 20a
MJ11013
MJ11014
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0811 405 028
Abstract: 6TPD470M5 f1f9 pwm schematic buck converter
Text: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision
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LTM4637
n15mm
20Aearch
4637f
com/LTM4637
0811 405 028
6TPD470M5
f1f9
pwm schematic buck converter
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diode H5
Abstract: No abstract text available
Text: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision
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LTM4637
4637fa
com/LTM4637
diode H5
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PDF
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Untitled
Abstract: No abstract text available
Text: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision
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LTM4637
4637fb
com/LTM4637
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K/SAC305 reflow bga
Abstract: No abstract text available
Text: LTM4637 20A DC/DC µModule Step-Down Regulator Features Description Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision
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LTM4637
4637fc
com/LTM4637
K/SAC305 reflow bga
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transistor A106
Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
Text: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A
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LM2639
T025A2
OT-23
SMDIP-10
SO-24
205Inductor
A6S-0104
transistor A106
transistor PNP A105
transistor pnp a110
TRANSISTOR A107
a69 156 transistor
A94 TRANSISTOR A114
TRANSISTOR a105
A107 capacitor
TRANSISTOR A98
motorola mosfet
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transistor pnp 12V 1A Continuous Current Peak 2A
Abstract: diode smd marking 147 MARKING SMD PNP TRANSISTOR 2a IB 115 smd transistor 2A FCX1147A
Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.
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FCX1147A
-30mA
-10mA
-50mA,
50MHz
-40mA
transistor pnp 12V 1A Continuous Current Peak 2A
diode smd marking 147
MARKING SMD PNP TRANSISTOR 2a
IB 115
smd transistor 2A
FCX1147A
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ic 3A hfe 500
Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.
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FCX1149A
-100mA
-10mA
-50mA,
50MHz
-40mA
ic 3A hfe 500
MARKING SMD PNP TRANSISTOR
FCX1149A
TRANSISTOR SMD PNP 1A
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FCX1149A
Abstract: DSA003683
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;
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FCX1149A
100ms
100us
FCX1149A
DSA003683
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :
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ENN3716
2SB1511/2SD2285
0V/20A
2039D
2SB1511/2SD2285]
2SB1511
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;
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FCX1147A
FCX1047A
100ms
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;
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FCX1147A
FCX1047A
100ms
522-FCX1147ATA
FCX1147ATA
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FCX1047A
Abstract: FCX1147A DSA003683
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;
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FCX1147A
FCX1047A
Dissipati100
100ms
FCX1047A
FCX1147A
DSA003683
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EN3716
Abstract: 2SB1511
Text: Ordering number:EN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :
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EN3716
2SB1511/2SD2285
0V/20A
2SB1511/2SD2285]
2SB1511
EN3716
2SB1511
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2SD1239
Abstract: 2SB923 2SD123
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB923 DESCRIPTION •High Collector Current: IC= -20A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -10A ·Complement to Type 2SD1239 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.
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2SB923
2SD1239
2SD1239
2SB923
2SD123
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 us A TELEPHONE: 973 376-2922 (212)227-6005 MJW21191 Silicon PNP Power Transistor DESCRIPTION • DC Current Gain Specified up to 8.0 Amperes at Temperature • HighSOA:20A, 18V, 100ms • TO-3PN Package • Complement to Type MJW21192
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MJW21191
100ms
MJW21192
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MJ15003 MJ15004
Abstract: MJ15003 300 watts amplifier MJ15004 mj15003 transistor MJ15003 TRANSISTOR MJ15004 mj15003 equivalent NPN 250W TO-3 140V 20A
Text: MJ15003, MJ15004 20A Complementary Power Transistors The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications. Features: • High Power Dissipation
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MJ15003,
MJ15004
MJ15003
MJ15004
MJ15003 MJ15004
MJ15003 300 watts amplifier
transistor MJ15003
TRANSISTOR MJ15004
mj15003 equivalent
NPN 250W
TO-3 140V 20A
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pin diagram of ic 4066
Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.
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MJ11015,
MJ11015
MJ11016
pin diagram of ic 4066
ic tc 4066 diagram
MJ11015
darlington complementary 120v
npn darlington transistor 200 watts
MJ11016
MJ11015-11016
11016
Darlington npn 2 amp
60 amp npn darlington power transistors
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TRANSISTOR 300v
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC 4fiE D • b7Tfl5flD 00013^4 bZS ■ Product Bulletin OTC433Ü August 1990 OTK '^ |/> — - — - T - y 7 - i S Fast Switching PNP Power Transistor Type OTC433Q - 300V, 20A
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OTC433Ü
OTC433Q
OTC4530
-150V,
300nsec,
TRANSISTOR 300v
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2SB833
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB833 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=-30A • High DC Current Gain : hFE 2 =1000(Min.) (VCE=-5V, Ic =-20A) . Monolithic Construction with Built-In Base-Emitter
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2SB833
2SB833
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EN3716
Abstract: 2039A 2SB1511
Text: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.
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EN3716
0V/20A
2SB1511/2SD2285
2SB1511
5111MH,
2SB1511/2SD2285
EN3716
2039A
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B904
Abstract: D1213 2SB904 D152 2SD121
Text: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.
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eN1022A
2SB904/2SD1213
0V/20A
2SB904
B904
D1213
2SB904
D152
2SD121
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