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    20A PNP Search Results

    20A PNP Result Highlights (5)

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    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    20A PNP Datasheets Context Search

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    PNP TRANSISTOR 1k

    Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A


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    -120V MJ11016 -120V; PNP TRANSISTOR 1k transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016 PDF

    mj11011

    Abstract: transistor 20a MJ11012 20A pnp
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A


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    MJ11012 mj11011 transistor 20a MJ11012 20A pnp PDF

    COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS

    Abstract: transistor 20a MJ11013 MJ11014
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A


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    MJ11014 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor 20a MJ11013 MJ11014 PDF

    0811 405 028

    Abstract: 6TPD470M5 f1f9 pwm schematic buck converter
    Text: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision


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    LTM4637 n15mm 20Aearch 4637f com/LTM4637 0811 405 028 6TPD470M5 f1f9 pwm schematic buck converter PDF

    diode H5

    Abstract: No abstract text available
    Text: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision


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    LTM4637 4637fa com/LTM4637 diode H5 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision


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    LTM4637 4637fb com/LTM4637 PDF

    K/SAC305 reflow bga

    Abstract: No abstract text available
    Text: LTM4637 20A DC/DC µModule Step-Down Regulator Features Description Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision


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    LTM4637 4637fc com/LTM4637 K/SAC305 reflow bga PDF

    transistor A106

    Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
    Text: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A


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    LM2639 T025A2 OT-23 SMDIP-10 SO-24 205Inductor A6S-0104 transistor A106 transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet PDF

    transistor pnp 12V 1A Continuous Current Peak 2A

    Abstract: diode smd marking 147 MARKING SMD PNP TRANSISTOR 2a IB 115 smd transistor 2A FCX1147A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.


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    FCX1147A -30mA -10mA -50mA, 50MHz -40mA transistor pnp 12V 1A Continuous Current Peak 2A diode smd marking 147 MARKING SMD PNP TRANSISTOR 2a IB 115 smd transistor 2A FCX1147A PDF

    ic 3A hfe 500

    Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
    Text: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.


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    FCX1149A -100mA -10mA -50mA, 50MHz -40mA ic 3A hfe 500 MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A PDF

    FCX1149A

    Abstract: DSA003683
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;


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    FCX1149A 100ms 100us FCX1149A DSA003683 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :


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    ENN3716 2SB1511/2SD2285 0V/20A 2039D 2SB1511/2SD2285] 2SB1511 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;


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    FCX1147A FCX1047A 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;


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    FCX1147A FCX1047A 100ms 522-FCX1147ATA FCX1147ATA PDF

    FCX1047A

    Abstract: FCX1147A DSA003683
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;


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    FCX1147A FCX1047A Dissipati100 100ms FCX1047A FCX1147A DSA003683 PDF

    EN3716

    Abstract: 2SB1511
    Text: Ordering number:EN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :


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    EN3716 2SB1511/2SD2285 0V/20A 2SB1511/2SD2285] 2SB1511 EN3716 2SB1511 PDF

    2SD1239

    Abstract: 2SB923 2SD123
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB923 DESCRIPTION •High Collector Current: IC= -20A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -10A ·Complement to Type 2SD1239 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.


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    2SB923 2SD1239 2SD1239 2SB923 2SD123 PDF

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 us A TELEPHONE: 973 376-2922 (212)227-6005 MJW21191 Silicon PNP Power Transistor DESCRIPTION • DC Current Gain Specified up to 8.0 Amperes at Temperature • HighSOA:20A, 18V, 100ms • TO-3PN Package • Complement to Type MJW21192


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    MJW21191 100ms MJW21192 PDF

    MJ15003 MJ15004

    Abstract: MJ15003 300 watts amplifier MJ15004 mj15003 transistor MJ15003 TRANSISTOR MJ15004 mj15003 equivalent NPN 250W TO-3 140V 20A
    Text: MJ15003, MJ15004 20A Complementary Power Transistors The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications. Features: • High Power Dissipation


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    MJ15003, MJ15004 MJ15003 MJ15004 MJ15003 MJ15004 MJ15003 300 watts amplifier transistor MJ15003 TRANSISTOR MJ15004 mj15003 equivalent NPN 250W TO-3 140V 20A PDF

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
    Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.


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    MJ11015, MJ11015 MJ11016 pin diagram of ic 4066 ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors PDF

    TRANSISTOR 300v

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC 4fiE D • b7Tfl5flD 00013^4 bZS ■ Product Bulletin OTC433Ü August 1990 OTK '^ |/> — - — - T - y 7 - i S Fast Switching PNP Power Transistor Type OTC433Q - 300V, 20A


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    OTC433Ü OTC433Q OTC4530 -150V, 300nsec, TRANSISTOR 300v PDF

    2SB833

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB833 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=-30A • High DC Current Gain : hFE 2 =1000(Min.) (VCE=-5V, Ic =-20A) . Monolithic Construction with Built-In Base-Emitter


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    2SB833 2SB833 PDF

    EN3716

    Abstract: 2039A 2SB1511
    Text: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.


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    EN3716 0V/20A 2SB1511/2SD2285 2SB1511 5111MH, 2SB1511/2SD2285 EN3716 2039A PDF

    B904

    Abstract: D1213 2SB904 D152 2SD121
    Text: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.


    OCR Scan
    eN1022A 2SB904/2SD1213 0V/20A 2SB904 B904 D1213 2SB904 D152 2SD121 PDF