SOt10 Package
Abstract: SFH6942 SFH6942T
Text: SFH6942 Vishay Semiconductors Optocoupler, Phototransistor Output, SOT-223/10, Quad Channel Features • Transistor Optocoupler in SOT-223/10 Package • End Stackable, 1.27 mm Spacing e3 • Low Current Input • Very High CTR, 150 % Typical at IF = 1 mA,
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SFH6942
OT-223/10,
OT-223/10
2002/95/EC
2002/96/EC
UL1577,
E52744
08-Apr-05
SOt10 Package
SFH6942
SFH6942T
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Untitled
Abstract: No abstract text available
Text: SB220 thru SB260 New Product Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability
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SB220
SB260
DO-204AC
DO-15)
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
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30120
Abstract: WSH2818 power metal strip resistors EIA-481-2 R0100
Text: WSH2818 Vishay Dale Power Metal Strip Resistors, High Power 5 W Low Value (down to 0.001 Ω), Surface Mount FEATURES • Improved thermal management incorporated into design • Ideal for all types of current sensing, voltage division and pulse applications including
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WSH2818
18-Jul-08
30120
WSH2818
power metal strip resistors
EIA-481-2
R0100
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BAV17
Abstract: BAV17-TAP BAV17-TR BAV18 BAV19 BAV20 BAV21 DO35
Text: BAV17 / 18 / 19 / 20 / 21 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purposes
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BAV17
2002/95/EC
2002/96/EC
BAV17
BAV17-TAP
BAV17-TR
BAV18
BAV18-TAP
BAV18-TR
BAV19
BAV17-TR
BAV18
BAV19
BAV20
BAV21
DO35
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SB050 transistor
Abstract: SB050 JESD22-B102D J-STD-002B SB020 SB030 SB040 SB060
Text: SB020 thru SB060 Vishay General Semiconductor Miniature Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder Dip 260 °C, 40 seconds
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SB020
SB060
2002/95/EC
2002/96/EC
MPG06
08-Apr-05
SB050 transistor
SB050
JESD22-B102D
J-STD-002B
SB030
SB040
SB060
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smd ww1 99
Abstract: zeranin str 30135 smd code Ww1 zener smd marking EA ww1 transistor smd smd diode WW1 Marking Code SMD WW1 smd transistor WW1 SMD ww1 96
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book POWER METAL STRIP RESISTORS vishay vse-db0089-0804 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0089-0804
smd ww1 99
zeranin
str 30135
smd code Ww1
zener smd marking EA
ww1 transistor smd
smd diode WW1
Marking Code SMD WW1
smd transistor WW1
SMD ww1 96
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BAV17-TAP
Abstract: BAV21-TR BAV17 BAV17-TR BAV18 BAV19 BAV20 BAV21 DO35
Text: BAV17 / 18 / 19 / 20 / 21 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purposes
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BAV17
2002/95/EC
2002/96/EC
BAV17
BAV17-TAP
BAV17-TR
BAV18
BAV18-TAP
BAV18-TR
BAV19
BAV21-TR
BAV17-TR
BAV18
BAV19
BAV20
BAV21
DO35
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SMD Resistors, Arrays and Networks
Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0010-0611
SMD Resistors, Arrays and Networks
STR 20012
WSK 013 070 eb
potentiometer vishay draloric 61
Mini Melf MMA 0204-50
a006 mosfet
Micro MELF "Land Pattern"
tca 4401
tuner uv 915 Schematic
MINIMELF resistors
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30120
Abstract: WSH2818 EIA-481-2 R0100
Text: WSH2818 Vishay Dale Power Metal Strip Resistors, High Power 5 watt Low Value (down to 0.001 Ω), Surface Mount FEATURES • Improved thermal management incorporated into design • Ideal for all types of current sensing, voltage division and pulse applications including
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WSH2818
08-Apr-05
30120
WSH2818
EIA-481-2
R0100
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1N5822 PACKAGE
Abstract: 1N5820 1N5820-E3/54 1N5822 data sheet 1N5821 1N5822 JESD22-B102D J-STD-002B
Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation
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1N5820,
1N5821
1N5822
DO-201AD
2002/95/EC
2002/96/EC
08-Apr-05
1N5822 PACKAGE
1N5820
1N5820-E3/54
1N5822 data sheet
1N5821
1N5822
JESD22-B102D
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: WSH2818 Key Benefits • Power rating of 5 Watt • Resistance values ranging from 1 mΩ to 100 mΩ • Tight tolerances down to ± 0.5 % • Very low inductance of < 5 nH • RoHS compliant and lead Pb -free • Dimensions of 0.280 inches by 0.180 inches by 0.032 inches
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WSH2818
WSH2818ditions
20-Apr-06
VMN-PT9172-0710
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. /p \ VW COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D .128 DIA TYP. A - 6 5 4 3 2 n 1 LOC DIST AD 00 REVISIONS P LTR L DESCRIPTION DATE DWN BSV MM 20APR06 ECO 05 003616 APVD POST ORIENTATION AMP’S OPTION.
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20APR06
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST GP 00 R E V IS IO N S LTR A NDTES: 1, UNLESS D T HE R WI S E RELEASED DATE DWN APVD 20A P R 06 RG SF SPECIFIED; PART NUMBER CHANGES AND DR DESI GN CHANGES A F F E C T I N G
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20APR06
31MAR2000
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