DMS2120LFWB
Abstract: No abstract text available
Text: DATE: 29 November, 2012 PCN #: 2088 PCN Title: Datasheet Revision Due to Relaxation of Min VR, Max VF, and/or Max IR Specification Limits Dear Customer: This is an announcement of change s to products that are currently being
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DMS2120LFWB-7
DMS2220LFDB-7
DIC-034
DMS2120LFWB
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Untitled
Abstract: No abstract text available
Text: SUMMIT SMS48 MICROELECTRONICS, Inc. PRELIMINARY INFORMATION 1 SEE LAST PAGE Quad Programmable Precision Supervisory Controller With Independent Resets FEATURES INTRODUCTION z Operational from any of four Voltage Monitoring Inputs z Four Independent Programmable Reset Outputs
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SMS48
SMS48
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1N4148
Abstract: MO-137 SMS48 ST Microelectronics date code format
Text: SUMMIT SMS48 MICROELECTRONICS, Inc. PRELIMINARY INFORMATION 1 SEE LAST PAGE Quad Programmable Precision Supervisory Controller With Independent Resets FEATURES INTRODUCTION z Operational from any of four Voltage Monitoring Inputs z Four Independent Programmable Reset Outputs
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SMS48
SMS48
1N4148
MO-137
ST Microelectronics date code format
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A1W TRANSISTOR
Abstract: ir sensor 4m range BFR92 application note diode a4W 18 diode a4W ccd image area sensor 120 fps DALSA AREA CCD transistor a3y FTF2021M
Text: IMAGE SENSORS FTF2021M 4M Full-Frame CCD Image Sensor Preliminary Product Specification DALSA Professional Imaging March 2009 DALSA Professional Imaging Preliminary Product Specification 4M Full-Frame CCD Image Sensor FTF2021M Table of Contents 1. Description . 3
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FTF2021M
FTF2021M
A1W TRANSISTOR
ir sensor 4m range
BFR92 application note
diode a4W 18
diode a4W
ccd image area sensor 120 fps
DALSA AREA CCD
transistor a3y
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Untitled
Abstract: No abstract text available
Text: MITEQ AM-1624 SERIES AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) IMPED. IN/OUT (Ohms) VSWR (Max.) NOISE FIGURE (dB, Typ.) 45 Third Order Intercept 38 37 36 35 34 33 40 35 30 1.0 250 500 750 1000 1250 1500 1750 2000 2250 2500
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AM-1624
AM-1624-2500
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ccd application vns
Abstract: CCD IMAGE QUANTUM CAPACITIVE diode a4W qmax 999 AN11 BAS28 BAT74 BG40 CM500
Text: IMAGE SENSORS FTF3021M 6M Full-Frame CCD Image Sensor Preliminary Product Specification October 7, 2008 DALSA Professional Imaging October 7, 2008 1 DALSA Professional Imaging Preliminary Product Specification 6M Full-Frame CCD Image Sensor FTF3021M Table of Contents
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FTF3021M
FTF3021M.
FTF3021M
FTF3021M/TG
FTF3021M/EG
FTF3021M/IG
FTF3021M/HG
ccd application vns
CCD IMAGE
QUANTUM CAPACITIVE
diode a4W
qmax 999
AN11
BAS28
BAT74
BG40
CM500
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Untitled
Abstract: No abstract text available
Text: MITEQ AM-1622 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 5–1000 AM-1622-1000 41 0.75 2.0:1 50/50 3.1 17 15 130 2 5–2000 AM-1622-2000 41 0.75 2.0:1 50/50 3.3 17
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AM-1622
AM-1622-1000
AM-1622-2000
AM-1622-2500
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Untitled
Abstract: No abstract text available
Text: MITEQ AM-1352 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 1–1000 AM-1352-1000 20 0.5 2.0:1 50/50 3.6 17 15 95 1 1–2000 AM-1352-2000 20 0.75 2.0:1 50/50 3.7
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AM-1352
AM-1352-1000
AM-1352-2000
AM-1352-2500
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miteq au series satcom if amplifiers
Abstract: No abstract text available
Text: MITEQ AM-1185 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1185-1000 AM-1185-2000 28 28 0.5 1 2.0:1 2.0:1 50/50 50/50 3.4 3.5 12 10 FREQUENCY (MHz) 1–1000
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AM-1185
AM-1185-1000
AM-1185-2000
200ion,
2002/96/EC
2002/96/EC
miteq au series satcom if amplifiers
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transistor H1A
Abstract: h1a transistor transistor H1A H2A sony CCD ICX452AQ ICX452AQ H1A marking TO-78 package
Text: ICX452AQ Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQ is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a
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ICX452AQ
ICX452AQ
AS-B6-02
transistor H1A
h1a transistor
transistor H1A H2A
sony CCD ICX452AQ
H1A marking
TO-78 package
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transistor H1A
Abstract: transistor H1A H2A h1a transistor marking v6 78 diode icx452 H1A marking V6 69 diode package marking v5a ICX452AQF
Text: ICX452AQF Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQF is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a
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ICX452AQF
ICX452AQF
AS-B7-03
transistor H1A
transistor H1A H2A
h1a transistor
marking v6 78 diode
icx452
H1A marking
V6 69 diode
package marking v5a
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44355
Abstract: ups 2581 v
Text: MITEQ AM-1367 SERIES AMPLIFIER FREQUENCY MHz 20–3000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1367 38 1.25 2.2:1 50/50 6 18 41 21 40 20 260 3 19 39 P1dB Gain (dB) 15
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AM-1367
1000staff,
44355
ups 2581 v
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scientific imaging technologies
Abstract: scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424A SI-424 mpp schematic TRANSISTOR S1A 41
Text: SCIENTIFIC IMAGING TECHNOLOGIES, INC. 2048 x 2048 pixel format 24µm square • Front-illuminated or thinned, back-illuminated versions ■ Unique thinning and Quantum Efficiency enhancement processes ■ Excellent QE from IR to UV ■ Anti-reflection coating
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SI-424A
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-01
scientific imaging technologies
scientific imaging technologies inc
TRANSISTOR S1d
TRANSISTOR S1A 64
SI-424
mpp schematic
TRANSISTOR S1A 41
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mdd3752
Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
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MDD3752
MDD3752
MDD3752RH
P-channel Trench MOSFET
MDD*3752
MDD375
MagnaChip Semiconductor
mosfet 441
Pchannel
mosfet p-channel 10A
3ROA
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9127 diode
Abstract: 19051 T1059N T1589N T2159N T308N T458N T459N T709N kb 778
Text: M6C-Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] [W] 35 245 340 407 534 569 778 914 1113 1318
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T308N
T458N
T709N
T1059N
T1589N
T2159N
9127 diode
19051
T1059N
T1589N
T2159N
T308N
T458N
T459N
T709N
kb 778
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1110 DFN8
Abstract: SBOS686 marking LT8
Text: TMP451 www.ti.com SBOS686 – JUNE 2013 ±1°C Remote and Local Temperature Sensor with η-Factor and Offset Correction, Series Resistance Cancellation, and Programmable Digital Filter Check for Samples: TMP451 FEATURES DESCRIPTION • The TMP451 is a high-accuracy, low-power remote
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TMP451
SBOS686
TMP451
1110 DFN8
SBOS686
marking LT8
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Untitled
Abstract: No abstract text available
Text: TMP451 www.ti.com SBOS686 – JUNE 2013 ±1°C Remote and Local Temperature Sensor with η-Factor and Offset Correction, Series Resistance Cancellation, and Programmable Digital Filter Check for Samples: TMP451 FEATURES DESCRIPTION • The TMP451 is a high-accuracy, low-power remote
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TMP451
SBOS686
TMP451
12-bit
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IR LFN
Abstract: mosfet 350v 10A IRFP340R IRFP341R IRFP342R IRFP343R power mosfet 350v to 247 irfip341r N-channel MOSFET to-247 50a
Text: Rugged Power MOSFETs. IRFP340R, IRFP341R, IRFP342R, IRFP343R File Number 2088 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDs on = 0.550 and 0.800 N -C H A N N E L E N H A N C E M E N T M O D E Feature«: • Single pulse avalanche energy rated
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IRFP340R,
IRFP341R,
IRFP342R,
IRIFP343R
IRFP342R
IRFP343R
92CS-4265Â
IR LFN
mosfet 350v 10A
IRFP340R
IRFP341R
power mosfet 350v to 247
irfip341r
N-channel MOSFET to-247 50a
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centronic osd100 6
Abstract: OSD15-5T OSD50-5T LD35-5T OSD35-5T LD20-5T OSD100-5T OSD5-ST OSD60-5T QD100-5T
Text: Series 5T Blue Sensitive for Biased or Unbiased Operation The Centronic Series 5 T photodiodes offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 4 3 0 - 900nm where the highest signal to noise ratio
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900nm
MD25-5T
MD100-5T
MD144-5T
centronic osd100 6
OSD15-5T
OSD50-5T
LD35-5T
OSD35-5T
LD20-5T
OSD100-5T
OSD5-ST
OSD60-5T
QD100-5T
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centronic osd100 6
Abstract: OSD15-5T Centronic osd15-5t LD35-5T OSD100-5T OSD1-5T QD7-5T OSD5-5T QD50-5T ld12a
Text: C E N T RO NI C INC-, E-0 »IV b2E » • mSSSO D0 D D 4 7 b 770 M C E N B Series 5T_ Blue Sensitive for Biased or Unbiased Operation The Centronic Series 5 T photodiodes offer high blue sensitivity coupled with high shunt resistance and low dark leakage
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D0GG47b
900nm
MD25-5T
MD100-5T
MD144-5T
centronic osd100 6
OSD15-5T
Centronic osd15-5t
LD35-5T
OSD100-5T
OSD1-5T
QD7-5T
OSD5-5T
QD50-5T
ld12a
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Zener 2458
Abstract: 1N744A 1n4370 zener 1N745
Text: Microsemi Zener Regulator Diodes Part N um ber ZEN M icrosem i i Package D ivision I O utline Type M il Spec P ow er Data S heet ID W j Ì Vz (V) Izt (mA) Zzt (n ) Zzk (n ) IR i VR ; Toi, 1 (uA ) 1 (V) (+/-%) 1N744A Scottsdale 5198 0.25 180 1 1200 5 Scottsdale
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DO-35
DO-213AA
-213AA
Zener 2458
1N744A
1n4370 zener
1N745
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IR-2140
Abstract: 03254
Text: LASER COMPONENTS GmbH Hausanschrift / Address Werner-von-Siemens-Str. 15 82140 Olching / Germany Phone +49 8142 2864-0 • Fax +49 8142 2864-11 info@lasercomponents.com • www.lasercomponents.com Datasheet for Order , LC Order Part Customer Number Numer Numer
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IR-2140.
IR-2140-GMP-Premium.
397-HV-1-189.
12/May/2005
397-HV-1-189
12/May/2005
IR-2140
03254
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sef820
Abstract: SEF822 2088 DIODE
Text: S 6 S-THÔMSON .D7E » H 7121537 OOiaO'-l'ï b | “ 73C 1 7 5 4 6 HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement, mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS P«0,
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SEF820
SEF821
SEF822
SEF823
00V/450V
00V/450V
300/is,
C-271
2088 DIODE
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4511 MOSFET
Abstract: FP3-40 T 4512 H diode diode T 4512 H mosfet irfp 250 N
Text: h a r r is IRFP340R, IRFP341R IRFP342R, IRFP343R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T O -2 4 7 • 11A and 8.7A, 350V and 400V TOP VIEW • rDS on = 0 .5 5 n and 0 .8 0 0 • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited
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IRFP340R,
IRFP341R
IRFP342R,
IRFP343R
IRFP341R,
IRFP343R
JRFP340R,
4511 MOSFET
FP3-40
T 4512 H diode
diode T 4512 H
mosfet irfp 250 N
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