Untitled
Abstract: No abstract text available
Text: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N60/AOTF8N60
AOT8N60
AOTF8N60
AOT8N60L
AOTF8N60L
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aotf8N6
Abstract: AOTF8N60 AOT8N60
Text: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N60/AOTF8N60
AOT8N60
AOTF8N60
O-220
O-220F
aotf8N6
AOT8N60
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Untitled
Abstract: No abstract text available
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
AOT8N65L
AOTF8N65L
O-220
O-220F
AOTF8N65
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AOT8N65
Abstract: No abstract text available
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
AOT8N65L
AOTF8N65L
O-220
O-220F
AOT8N65
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Untitled
Abstract: No abstract text available
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
AOT8N65L
AOTF8N65L
AOTF8N65
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AOTF4N60
Abstract: AOT4N60 AOT8N60 AOTF8N60
Text: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N60/AOTF8N60
AOT8N60
AOTF8N60
O-220
O-220F
AOTF4N60
AOT4N60
AOT8N60
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AOT8N65
Abstract: Gate Turn-off 100A 750V
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
O-220
O-220F
AOT8N65
Gate Turn-off 100A 750V
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AOTF8N65
Abstract: AOT8N65 aotf8N6
Text: AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N65/AOTF8N65
AOT8N65
AOTF8N65
O-220
O-220F
AOT8N65
aotf8N6
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aotf8n60l
Abstract: AOT8N60 AOTF8N60
Text: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N60/AOTF8N60
AOT8N60
AOTF8N60
AOT8N60L
AOTF8N60L
O-220
O-220F
aotf8n60l
AOT8N60
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Untitled
Abstract: No abstract text available
Text: AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N60/AOTF8N60
AOT8N60
AOTF8N60
AOT8N60L
AOTF8N60L
O-220
O-220F
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thyristor SCR 600V 8A
Abstract: scr 600v 8 a JESD22-A101 JESD22-A102 thyristor capacitive discharge ignition SCR I-PAK SCR 40A 600V thyristor SCR 600V 8A igt 50
Text: Teccor brand Thyristors 4 Amp Sensitive SCRs Sxx04xSx Series Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps of current as furnished by sense coils, proximity switches,
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Sxx04xSx
O-252AA
O-251AA
S6004VS1
O-251
O-252
thyristor SCR 600V 8A
scr 600v 8 a
JESD22-A101
JESD22-A102
thyristor capacitive discharge ignition
SCR I-PAK
SCR 40A 600V
thyristor SCR 600V 8A igt 50
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Untitled
Abstract: No abstract text available
Text: DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • 0.6mm profile – ideal for low profile applications PCB footprint of 4mm 15.3mΩ @ VGS = -4.5V -9.5A Low Gate Threshold Voltage 19mΩ @ VGS = -2.5V
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DMP1022UFDF
AEC-Q101
DS36624
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bu 5027
Abstract: 335 for hen nta IHB60T240512C NME1205S NTH0505MC nmv1515s LSM-T/10-D12-C NMA2412D HL02R24S05Y HL02R05D15YC
Text: DC/DC Converters Isolated Point-of-Load Bus Converters Processor Support Memory Support www.murata-ps.com Overview PoL Converters P If you need a DC/DC converter look no further than… Bus Converters B 5IF8PSMEhT/P IIsolated Single About Murata Power Solutions
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D-80045
D-80336
bu 5027
335 for hen nta
IHB60T240512C
NME1205S
NTH0505MC
nmv1515s
LSM-T/10-D12-C
NMA2412D
HL02R24S05Y
HL02R05D15YC
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ZXTC6717MC
Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor
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ZXTC6717MC
100mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31926
ZXTC6717MC
marking DA1
DFN3020B-8
ZXTC6717MCTA
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ZXTD717MC
Abstract: DFN3020B-8 ZXTD717MCTA
Text: A Product Line of Diodes Incorporated ZXTD717MC DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -12V RSAT = 60 mΩ IC = -4A Continuous Collector Current Low Equivalent On Resistance
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ZXTD717MC
-140mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31934
ZXTD717MC
DFN3020B-8
ZXTD717MCTA
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MCHRM
Abstract: hrm2-s-dc24v hrm2-s-dc5v Multicomp relays MCHRM2 DC24V Multicomp relays dc9v
Text: MCHRM2 Series PCB Power Relays Features: • SPCO contacts. • Sealed to allow washing after flow soldering. Specifications: Coil Data: Nominal Voltage : 3V dc to 48V dc. Nominal Power consumption : 540mW to 720mW. Contact Data: Contact Arrangement : 1 form A, 1 form B, 1 form C.
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540mW
720mW.
840VA,
MCHRM
hrm2-s-dc24v
hrm2-s-dc5v
Multicomp relays MCHRM2
DC24V
Multicomp relays
dc9v
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12M250
Abstract: ABB inverter motor fault code ptc s1450 MC4046 REC310PE72 10 amp 12 volt solar charger circuits SOLAR INVERTER 1000 watts circuit diagram
Text: Contents System Design. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Batteries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 Grid-Tie Systems. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
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Hitachi DSA0074
Abstract: HAT2020R MS-012AA DA-20
Text: ADE–208–439 F Z HAT2020R Silicon N Channel Power MOS FET 7th. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting
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HAT2020R
012AA
MS-012AA
Hitachi DSA0074
HAT2020R
MS-012AA
DA-20
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Hitachi DSA002759
Abstract: No abstract text available
Text: ADE–208–439 F Z HAT2020R Silicon N Channel Power MOS FET 7th. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting
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HAT2020R
012AA
MS-012AA
Hitachi DSA002759
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Untitled
Abstract: No abstract text available
Text: UNR Series Single Output, Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features • Low cost ■ 5V or 12V inputs ■ 3.3V±1% ±33mV outputs ■ ±0.25% (±8mV) max. line regulation ■ ±0.5% (±17mV) max. load regulation ■ Guaranteed efficiencies to 86%
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100oC
UNR8-40W
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Untitled
Abstract: No abstract text available
Text: UNR Series Single Output, Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features N Low cost N 5V or 12V inputs N 3.3V±1% ±33mV outputs N ±0.25% (±8mV) max. line regulation N ±0.5% (±17mV) max. load regulation N Guaranteed efficiencies to 86% N Power densities to 29W/in3
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100oC
UNR8-40W
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IC 630
Abstract: marking DA1
Text: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
marking DA1
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071 0039 scr
Abstract: No abstract text available
Text: Teccor brand Thyristors 4 Amp Sensitive SCRs Sxx04xSx Series Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microAmps of current as furnished by sense coils, proximity switches,
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Sxx04xSx
L6004V4
O-251
O-252
071 0039 scr
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13001 6D 331
Abstract: 13001 8D 331 13001 s 8d
Text: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e
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OCR Scan
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