a6628
Abstract: A-6628 cewe DIP32 MSM548512L
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0044-17-Y1
MSM548512L
MSM548512L
288-Word
MSM548512L2048
84MSRAMCMOS
250mW
500mW
160ns
a6628
A-6628
cewe
DIP32
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a6628
Abstract: SOP-112 DIP32 MSM548512L DIP32P
Text: J2L0044-17-Y1 作成：1998年 1月 MSM548512L l 前回作成：1997年 9月 ¡ 電子デバイス MSM548512L 524,288-Wordx8-Bit PSRAM n 概要 プロセスを
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J2L0044-17-Y1
MSM548512L
MSM548512L
288-Word
MSM548512L2048
84MSRAMCMOS
250mW
500mW
160ns
a6628
SOP-112
DIP32
DIP32P
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Untitled
Abstract: No abstract text available
Text: TC518512FL 1/2 IL00 * C-MOS 524,288WORDX8 BIT STATIC RAM -TOP VIEW12 A18 IN 1 VDD(+5V) 32 11 10 A16 31 A15 IN 2 IN 9 8 30 A17 IN A14 IN 3 7 6 A12 IN 4 29 R/W A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 IN 7 26 A9 IN 28 A4 IN 8 25 A11 IN 31 4
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TC518512FL
288WORDX8
VIEW12
A0-A18
A11-A18
256X8
A0-A10
2048X256X8
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7
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TC55V040FT/TR-85
288-WORD
TC55V040FT/TR
304-bit
40-P-1014-0
20adl
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TC518512
Abstract: LT/SG3527A
Text: TOSHIBA T C 5 1 8 5 1 2 P iy F L /F T L A R L - 7 0 L 'I /8 0 ( L T ) /1 0 q _ ,'I) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 5 2 4,28 8 w o rd s by 8 bits. The T C 5 1 85 12P L utilizes
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D-173
TC518512PL/FL/FTL/TRL-70
D-174
TC518512
LT/SG3527A
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TC518512FTL
Abstract: TC518512 TC518512PL
Text: TOSHIBA T C 5 1 8 5 1 2 P I7 F L / F T L / T R L r 7 0 / 8 0 / 1 0 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes
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TC518512PL
TC518512PL/FL/FTL/TRL-70/80/10
D-166
TC518512FTL
TC518512
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TC518512
Abstract: transistor D195
Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er
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TC518512PL/FL/FTL/rRL-70LV/80LV/10LV
TheTC518512PL
TC518512PL
TC518512PL-LV
D-194
TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV
D-195
TC518512
transistor D195
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TC518512FTL-70
Abstract: No abstract text available
Text: 5 2 4 ,2 8 8 W O R D S x 8 8 IT CMOS PSEUDO S T A T IC RAM PRELIMINARY D E S C R IP T IO N T he T C 5 1 8 5 1 2 P L F am ily is a 4M b it high speed CM OS Pseudo S tatic RAM organized as 5 2 4 ,2 8 8 words by 8 bits. T he T C 5 1 8 5 1 2 P L F am ily u tilizin g one transistor dynamic memory cell with CM OS
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TC518512PL
TC518512PL/FL/FTUTRLâ
TC518512FTL-70,
35MAX
TC518512TRL
TC518512FTL-70
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