a6628
Abstract: A-6628 cewe DIP32 MSM548512L
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0044-17-Y1
MSM548512L
MSM548512L
288-Word
MSM548512L2048
84MSRAMCMOS
250mW
500mW
160ns
a6628
A-6628
cewe
DIP32
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Untitled
Abstract: No abstract text available
Text: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16
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AS4C1M16S
16-bit
cycles/64ms
50-pin
AS4C1M16S
AS4C1M16S-7TCN
1M16S
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HM65
Abstract: DP-32 HM658512A HM658512ALFP-7 HM658512ALFP-8 HM658512ALP-10 HM658512ALP-10V HM658512ALP-7 HM658512ALP-7V HM658512ALP-8
Text: HM658512A Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Apr. 20, 1995 The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS
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HM658512A
524288-word
512-kword
HM658512A
525-mil
460-mil
600-mil
FP-32D)
HM65
DP-32
HM658512ALFP-7
HM658512ALFP-8
HM658512ALP-10
HM658512ALP-10V
HM658512ALP-7
HM658512ALP-7V
HM658512ALP-8
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Untitled
Abstract: No abstract text available
Text: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16
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AS4C1M16S
AS4C1M16S
AS4C1M16S-7TCN
1M16S
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1000fps
Abstract: TDI ccd sensor tdi ccd 512 CCD160-250-SFT Sarnoff TDI CCD ccd sensor back illuminated 160-250-SFT high speed CCD sensor sarnoff ccd
Text: CCD160-250-SFT 2048 x 256 High-Performance CCD Sensor Text Text TExt sensor For unparalleled performance, the high speed, high sensitivity CCD 160-250-SFT generates clear images in real time. The Sarnoff CCD 160-256-SFT imager is a back-illuminated CCD array
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160-250-SFT
160-256-SFT
1000fps
2048x256
1000fps
TDI ccd sensor
tdi ccd 512
CCD160-250-SFT
Sarnoff
TDI CCD
ccd sensor back illuminated
high speed CCD sensor
sarnoff ccd
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a6628
Abstract: SOP-112 DIP32 MSM548512L DIP32P
Text: J2L0044-17-Y1 作成：1998年 1月 MSM548512L l 前回作成：1997年 9月 ¡ 電子デバイス MSM548512L 524,288-Wordx8-Bit PSRAM n 概要 プロセスを
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J2L0044-17-Y1
MSM548512L
MSM548512L
288-Word
MSM548512L2048
84MSRAMCMOS
250mW
500mW
160ns
a6628
SOP-112
DIP32
DIP32P
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HM65W8512
Abstract: HM65W8512LFP-12 HM65W8512LFP-12V HM65W8512LFP-15 HM65W8512LFP-15V HM65W8512LRR-12 HM65W8512LTT-12 HM65W8512LTT-12V HM65W8512LTT-15 HM65W8512LTT-15V
Text: ADE-203-289B Z HM65W8512 Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Dec. 9, 1994 The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 524288-word × 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm HiCMOS process technology.
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ADE-203-289B
HM65W8512
524288-word
HM65W8512
525-mil
460-mil
HM65W8512FPSR
HM65W8512LFP-12
HM65W8512LFP-12V
HM65W8512LFP-15
HM65W8512LFP-15V
HM65W8512LRR-12
HM65W8512LTT-12
HM65W8512LTT-12V
HM65W8512LTT-15
HM65W8512LTT-15V
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p22v10
Abstract: MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10
Text: Order Number: MCF5206eAN/D Rev. 1, 6/2001 Semiconductor Products Sector Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick Motorola Ltd., East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than
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MCF5206eAN/D
MCF5206e
p22v10
MCF5307
MT48LC1M16A1
PAL22V10
PALLV22V10
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p22v10
Abstract: AN2006 MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 P00001 palasm
Text: Order Number: AN2006 Rev. 1, 6/2001 Freescale Semiconductor, Inc. Freescale Semiconductor Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than
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AN2006
MCF5206e
p22v10
AN2006
MCF5307
MT48LC1M16A1
PAL22V10
PALLV22V10
P00001
palasm
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Untitled
Abstract: No abstract text available
Text: TC518512FL 1/2 IL00 * C-MOS 524,288WORDX8 BIT STATIC RAM -TOP VIEW12 A18 IN 1 VDD(+5V) 32 11 10 A16 31 A15 IN 2 IN 9 8 30 A17 IN A14 IN 3 7 6 A12 IN 4 29 R/W A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 IN 7 26 A9 IN 28 A4 IN 8 25 A11 IN 31 4
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TC518512FL
288WORDX8
VIEW12
A0-A18
A11-A18
256X8
A0-A10
2048X256X8
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p22v10
Abstract: palasm ba date sheet MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 asynchronous dram
Text: Freescale Semiconductor, Inc. Order Number: MCF5206eAN/D Rev. 1, 6/2001 Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick Motorola Ltd., East Kilbride, Scotland
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MCF5206eAN/D
MCF5206e
p22v10
palasm
ba date sheet
MCF5307
MT48LC1M16A1
PAL22V10
PALLV22V10
asynchronous dram
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EM636165TS Rev.4
Abstract: cke 2009 EM636165TS-6 em636165ts EM636165TS-7 EM636165 EM636165TS-5
Text: EtronTech EM636165TS 1M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • • Fast access time: 4.5/5.4/5.4ns Fast clock rate: 200/166/143 MHz Self refresh mode: standard Internal pipelined architecture
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EM636165TS
16-bit
cycles/64ms
50-pin
EM636165TS Rev.4
cke 2009
EM636165TS-6
em636165ts
EM636165TS-7
EM636165
EM636165TS-5
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Untitled
Abstract: No abstract text available
Text: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16
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AS4C1M16S
16-bit
cycles/64ms
50-pin
AS4C1M16S
AS4C1M16S-7TCN
1M16S
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MCF5307
Abstract: MT48LC1M16A1 P22V10 PAL22V10 PALLV22V10
Text: Order Number: AN2006/D Rev. 0, 7/2000 Semiconductor Products Sector Application Note Interfacing the ColdFire¨ MCF5206e to a 16-Mbyte SDRAM Nigel Dick Netcomm Applications Group Motorola Ltd., East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than
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AN2006/D
MCF5206e
16-Mbyte
lo-800-441-2447
MCF5307
MT48LC1M16A1
P22V10
PAL22V10
PALLV22V10
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7
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TC55V040FT/TR-85
288-WORD
TC55V040FT/TR
304-bit
40-P-1014-0
20adl
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V9990
Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
Text: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.
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V9990
LSI-2499903
CA95131
S0X3
yamaha v9990
CSR BC8
yamaha fc4
A4032
scax1
csr bc7
KA17/127BPV1MSTH
yamaha fc5
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M5M4V16S30DTP
Abstract: M5M4V16S40 M5M4V16s30
Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)
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6S20DTP-7
097152-W
1048576-WORD
M5M4V16S20DTP
152-word
M5M4V16S30DTP
576-word
M5M4V16S40DTP
288-word
16-bit.
M5M4V16S40
M5M4V16s30
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HM658512LP-10
Abstract: hm658512lp HM658512LP-12 HM658512LP10 HM658512 NS16032 HM658512lfp HM658512LFP-10
Text: H T ACHI/ LOGIC/ARRAYS/MEM SIE D MMIhEOa G 0 1 fl2 GQ S Û T • H I T 2 HM658512 S e rie s -52 4,28 8-W o rd x 8 -B it H ig h S p e e d P s e u d o S ta tic R A M Features • Single 5 V ± 10% • Highspeed Access time 51 access t im e .80/100/120 ns
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HM658512
32-pin
HM658512LP-10
hm658512lp
HM658512LP-12
HM658512LP10
NS16032
HM658512lfp
HM658512LFP-10
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um1a
Abstract: No abstract text available
Text: TOSHIBA TC59S6432CFT/CFTL-54,-60r70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-W O R D S X 4B A N K S X 32-B ITS SYNCHRONOUS D YN A M IC RAM DESCRIPTION TC59S6432CFT/CFTL i s a CMOS s y n c h r o n o u s d y n a m i c r a n d o m a c c e s s m e m o r y o r g a n i z e d a s 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock
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TC59S6432CFT/CFTL-54
-60r70
TC59S6432CFT/CFTL
288words
62MAX
um1a
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TC59S1616
Abstract: TC59S1616AFT TC59S1608AF
Text: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM
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TC59S1616AFT-8
TC59S1608AFT-8
TC59S1604AFT-8
288-WORD
16-BIT
576-WORDx2
TC59S1616AFT,
TC59S1608AFT
TC59S1604AFT
TC59S1616
TC59S1616AFT
TC59S1608AF
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i8088
Abstract: Z80 INTERFACE lcd display SED1351FOA 351FLB SED1351F0A
Text: SEDI 351 GRAPHICS LCD CONTROLLER DESCRIPTION The SED1351F is a graphics LCD controller capable of controlling medium to large resolution displays. It transfers data from MPU to external frame buffer RAM and converts this data to display signals for LCD drivers. The SED1351F can display images with 4 gray shades and support display duty cycle as high as 1/
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SED1351F
64K-bit
256K-bit
SED13
LD11DO
351FOA
i8088
Z80 INTERFACE lcd display
SED1351FOA
351FLB
SED1351F0A
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TC518512
Abstract: LT/SG3527A
Text: TOSHIBA T C 5 1 8 5 1 2 P iy F L /F T L A R L - 7 0 L 'I /8 0 ( L T ) /1 0 q _ ,'I) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 5 2 4,28 8 w o rd s by 8 bits. The T C 5 1 85 12P L utilizes
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D-173
TC518512PL/FL/FTL/TRL-70
D-174
TC518512
LT/SG3527A
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TC518512FTL
Abstract: TC518512 TC518512PL
Text: TOSHIBA T C 5 1 8 5 1 2 P I7 F L / F T L / T R L r 7 0 / 8 0 / 1 0 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes
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TC518512PL
TC518512PL/FL/FTL/TRL-70/80/10
D-166
TC518512FTL
TC518512
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TC518512
Abstract: transistor D195
Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er
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TC518512PL/FL/FTL/rRL-70LV/80LV/10LV
TheTC518512PL
TC518512PL
TC518512PL-LV
D-194
TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV
D-195
TC518512
transistor D195
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