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    a6628

    Abstract: A-6628 cewe DIP32 MSM548512L
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2L0044-17-Y1 MSM548512L MSM548512L 288-Word MSM548512L2048 84MSRAMCMOS 250mW 500mW 160ns a6628 A-6628 cewe DIP32

    Untitled

    Abstract: No abstract text available
    Text: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16


    Original     		PDF AS4C1M16S 16-bit cycles/64ms 50-pin AS4C1M16S AS4C1M16S-7TCN 1M16S

    HM65

    Abstract: DP-32 HM658512A HM658512ALFP-7 HM658512ALFP-8 HM658512ALP-10 HM658512ALP-10V HM658512ALP-7 HM658512ALP-7V HM658512ALP-8
    Text: HM658512A Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Apr. 20, 1995 The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS


    Original     		PDF HM658512A 524288-word 512-kword HM658512A 525-mil 460-mil 600-mil FP-32D) HM65 DP-32 HM658512ALFP-7 HM658512ALFP-8 HM658512ALP-10 HM658512ALP-10V HM658512ALP-7 HM658512ALP-7V HM658512ALP-8

    Untitled

    Abstract: No abstract text available
    Text: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16


    Original     		PDF AS4C1M16S AS4C1M16S AS4C1M16S-7TCN 1M16S

    1000fps

    Abstract: TDI ccd sensor tdi ccd 512 CCD160-250-SFT Sarnoff TDI CCD ccd sensor back illuminated 160-250-SFT high speed CCD sensor sarnoff ccd
    Text: CCD160-250-SFT 2048 x 256 High-Performance CCD Sensor Text Text TExt sensor For unparalleled performance, the high speed, high sensitivity CCD 160-250-SFT generates clear images in real time. The Sarnoff CCD 160-256-SFT imager is a back-illuminated CCD array


    Original     		PDF 160-250-SFT 160-256-SFT 1000fps 2048x256 1000fps TDI ccd sensor tdi ccd 512 CCD160-250-SFT Sarnoff TDI CCD ccd sensor back illuminated high speed CCD sensor sarnoff ccd

    a6628

    Abstract: SOP-112 DIP32 MSM548512L DIP32P
    Text: J2L0044-17-Y1 作成：1998年 1月 MSM548512L l 前回作成：1997年 9月 ¡ 電子デバイス MSM548512L 524,288-Wordx8-Bit PSRAM n 概要 プロセスを


    Original     		PDF J2L0044-17-Y1 MSM548512L MSM548512L 288-Word MSM548512L2048 84MSRAMCMOS 250mW 500mW 160ns a6628 SOP-112 DIP32 DIP32P

    HM65W8512

    Abstract: HM65W8512LFP-12 HM65W8512LFP-12V HM65W8512LFP-15 HM65W8512LFP-15V HM65W8512LRR-12 HM65W8512LTT-12 HM65W8512LTT-12V HM65W8512LTT-15 HM65W8512LTT-15V
    Text: ADE-203-289B Z HM65W8512 Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Dec. 9, 1994 The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 524288-word × 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm HiCMOS process technology.


    Original     		PDF ADE-203-289B HM65W8512 524288-word HM65W8512 525-mil 460-mil HM65W8512FPSR HM65W8512LFP-12 HM65W8512LFP-12V HM65W8512LFP-15 HM65W8512LFP-15V HM65W8512LRR-12 HM65W8512LTT-12 HM65W8512LTT-12V HM65W8512LTT-15 HM65W8512LTT-15V

    p22v10

    Abstract: MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10
    Text: Order Number: MCF5206eAN/D Rev. 1, 6/2001 Semiconductor Products Sector Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick Motorola Ltd., East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than


    Original     		PDF MCF5206eAN/D MCF5206e p22v10 MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10

    p22v10

    Abstract: AN2006 MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 P00001 palasm
    Text: Order Number: AN2006 Rev. 1, 6/2001 Freescale Semiconductor, Inc. Freescale Semiconductor Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than


    Original     		PDF AN2006 MCF5206e p22v10 AN2006 MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 P00001 palasm

    Untitled

    Abstract: No abstract text available
    Text: TC518512FL 1/2 IL00 * C-MOS 524,288WORDX8 BIT STATIC RAM -TOP VIEW12 A18 IN 1 VDD(+5V) 32 11 10 A16 31 A15 IN 2 IN 9 8 30 A17 IN A14 IN 3 7 6 A12 IN 4 29 R/W A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 IN 7 26 A9 IN 28 A4 IN 8 25 A11 IN 31 4


    Original     		PDF TC518512FL 288WORDX8 VIEW12 A0-A18 A11-A18 256X8 A0-A10 2048X256X8

    p22v10

    Abstract: palasm ba date sheet MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 asynchronous dram
    Text: Freescale Semiconductor, Inc. Order Number: MCF5206eAN/D Rev. 1, 6/2001 Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick Motorola Ltd., East Kilbride, Scotland


    Original     		PDF MCF5206eAN/D MCF5206e p22v10 palasm ba date sheet MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 asynchronous dram

    EM636165TS Rev.4

    Abstract: cke 2009 EM636165TS-6 em636165ts EM636165TS-7 EM636165 EM636165TS-5
    Text: EtronTech EM636165TS 1M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • • Fast access time: 4.5/5.4/5.4ns Fast clock rate: 200/166/143 MHz Self refresh mode: standard Internal pipelined architecture


    Original     		PDF EM636165TS 16-bit cycles/64ms 50-pin EM636165TS Rev.4 cke 2009 EM636165TS-6 em636165ts EM636165TS-7 EM636165 EM636165TS-5

    Untitled

    Abstract: No abstract text available
    Text: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16


    Original     		PDF AS4C1M16S 16-bit cycles/64ms 50-pin AS4C1M16S AS4C1M16S-7TCN 1M16S

    MCF5307

    Abstract: MT48LC1M16A1 P22V10 PAL22V10 PALLV22V10
    Text: Order Number: AN2006/D Rev. 0, 7/2000 Semiconductor Products Sector Application Note Interfacing the ColdFire¨ MCF5206e to a 16-Mbyte SDRAM Nigel Dick Netcomm Applications Group Motorola Ltd., East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than


    Original     		PDF AN2006/D MCF5206e 16-Mbyte lo-800-441-2447 MCF5307 MT48LC1M16A1 P22V10 PAL22V10 PALLV22V10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		PDF TC55V040FT/TR-85 288-WORD TC55V040FT/TR 304-bit 40-P-1014-0 20adl

    V9990

    Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
    Text: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.


    OCR Scan     		PDF V9990 LSI-2499903 CA95131 S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5

    M5M4V16S30DTP

    Abstract: M5M4V16S40 M5M4V16s30
    Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)


    OCR Scan     		PDF 6S20DTP-7 097152-W 1048576-WORD M5M4V16S20DTP 152-word M5M4V16S30DTP 576-word M5M4V16S40DTP 288-word 16-bit. M5M4V16S40 M5M4V16s30

    HM658512LP-10

    Abstract: hm658512lp HM658512LP-12 HM658512LP10 HM658512 NS16032 HM658512lfp HM658512LFP-10
    Text: H T ACHI/ LOGIC/ARRAYS/MEM SIE D MMIhEOa G 0 1 fl2 GQ S Û T • H I T 2 HM658512 S e rie s -52 4,28 8-W o rd x 8 -B it H ig h S p e e d P s e u d o S ta tic R A M Features • Single 5 V ± 10% • Highspeed Access time 51 access t im e .80/100/120 ns


    OCR Scan     		PDF HM658512 32-pin HM658512LP-10 hm658512lp HM658512LP-12 HM658512LP10 NS16032 HM658512lfp HM658512LFP-10

    um1a

    Abstract: No abstract text available
    Text: TOSHIBA TC59S6432CFT/CFTL-54,-60r70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-W O R D S X 4B A N K S X 32-B ITS SYNCHRONOUS D YN A M IC RAM DESCRIPTION TC59S6432CFT/CFTL i s a CMOS s y n c h r o n o u s d y n a m i c r a n d o m a c c e s s m e m o r y o r g a n i z e d a s 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock


    OCR Scan     		PDF TC59S6432CFT/CFTL-54 -60r70 TC59S6432CFT/CFTL 288words 62MAX um1a

    TC59S1616

    Abstract: TC59S1616AFT TC59S1608AF
    Text: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59S1616AFT-8 TC59S1608AFT-8 TC59S1604AFT-8 288-WORD 16-BIT 576-WORDx2 TC59S1616AFT, TC59S1608AFT TC59S1604AFT TC59S1616 TC59S1616AFT TC59S1608AF

    i8088

    Abstract: Z80 INTERFACE lcd display SED1351FOA 351FLB SED1351F0A
    Text: SEDI 351 GRAPHICS LCD CONTROLLER DESCRIPTION The SED1351F is a graphics LCD controller capable of controlling medium to large resolution displays. It transfers data from MPU to external frame buffer RAM and converts this data to display signals for LCD drivers. The SED1351F can display images with 4 gray shades and support display duty cycle as high as 1/


    OCR Scan     		PDF SED1351F 64K-bit 256K-bit SED13 LD11DO 351FOA i8088 Z80 INTERFACE lcd display SED1351FOA 351FLB SED1351F0A

    TC518512

    Abstract: LT/SG3527A
    Text: TOSHIBA T C 5 1 8 5 1 2 P iy F L /F T L A R L - 7 0 L 'I /8 0 ( L T ) /1 0 q _ ,'I) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 5 2 4,28 8 w o rd s by 8 bits. The T C 5 1 85 12P L utilizes


    OCR Scan     		PDF D-173 TC518512PL/FL/FTL/TRL-70 D-174 TC518512 LT/SG3527A

    TC518512FTL

    Abstract: TC518512 TC518512PL
    Text: TOSHIBA T C 5 1 8 5 1 2 P I7 F L / F T L / T R L r 7 0 / 8 0 / 1 0 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes


    OCR Scan     		PDF TC518512PL TC518512PL/FL/FTL/TRL-70/80/10 D-166 TC518512FTL TC518512

    TC518512

    Abstract: transistor D195
    Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er


    OCR Scan     		PDF TC518512PL/FL/FTL/rRL-70LV/80LV/10LV TheTC518512PL TC518512PL TC518512PL-LV D-194 TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV D-195 TC518512 transistor D195