Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY66002-11: 1900-2025 MHz, +19 dBm Linear Power Amplifier Applications Description • Residential femtocells The SKY66002-11 linear Power Amplifier PA is a fully matched surface mount module developed for WCDMA applications operating from 1900 to 2025 MHz. The device meets the stringent
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SKY66002-11:
SKY66002-11
202461B
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY66002-11: 1900-2025 MHz, +19 dBm Linear Power Amplifier Applications Description • Residential femtocells The SKY66002-11 linear Power Amplifier PA is a fully matched surface mount module developed for WCDMA applications operating from 1900 to 2025 MHz. The device meets the stringent
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SKY66002-11:
SKY66002-11
202461C
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY66002-11: 1900 to 2025 MHz, +19 dBm Linear Power Amplifier Applications Description • Residential femtocells The SKY66002-11 linear Power Amplifier PA is a fully matched surface mount module developed for WCDMA applications operating from 1900 to 2025 MHz. The device meets the stringent
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SKY66002-11:
SKY66002-11
202461D
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A1512
Abstract: transistor a1640
Text: Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF amplifier. The combination of high output power and low noise figure
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UTC2025
Abstract: TELEDYNE 1413 RF TRANSISTOR 10-15 GHZ 11978
Text: Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF amplifier. The combination of high output power and low noise figure
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UTC2025
Abstract: AVANTEK uto Avantek uto amp
Text: H Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000␣MHz The 2025 Series is a wideband, high-power GaAs FET RF amplifier. The combination of high
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2000MHz
5963-2487E
UTC2025
AVANTEK uto
Avantek uto amp
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Untitled
Abstract: No abstract text available
Text: LM5039 Application Note 2025 LM5039 Evaluation Board Literature Number: SNVA423C National Semiconductor Application Note 2025 Ajay Hari February 17, 2010 Introduction Theory of Operation The LM5039 evaluation board is designed to provide the design engineer with a fully functional power converter based
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LM5039
LM5039
SNVA423C
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S2995
Abstract: skyworks helios rf coupler
Text: PRELIMINARY DATA SHEET SKY66002-11: 1900-2025 MHz, +19 dBm Linear Power Amplifier Applications Description • Residential femtocells The SKY66002-11 linear Power Amplifier PA is a fully matched surface mount module developed for WCDMA applications operating from 1900 to 2025 MHz. The device meets the stringent
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SKY66002-11:
SKY66002-11
02461A
S2995
skyworks helios
rf coupler
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electromagnetic pulse generator kit
Abstract: radar circuit modulator ah1 RF amplifier PD 6112
Text: Signal Sources 2023A/B, 2025 Signal Generators With its level of performance, this compact general purpose signal generator delivers outstanding value for money. • Wide frequency coverage:9 kHz to 1.2 GHz 2023A 9 kHz to 2.05 GHz (2023B) 9 kHz to 2.51 GHz (2025)
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023A/B,
2023B)
electromagnetic pulse generator kit
radar circuit modulator
ah1 RF amplifier
PD 6112
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Untitled
Abstract: No abstract text available
Text: Signal Sources 2023A/B, 2025 Signal Generators With its level of performance, this compact general purpose signal generator delivers outstanding value for money. • Wide frequency coverage:9 kHz to 1.2 GHz 2023A 9 kHz to 2.05 GHz (2023B) 9 kHz to 2.51 GHz (2025)
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023A/B,
2023B)
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L-705
Abstract: AP602 AP603 matching network
Text: Application Note AP603 2025 MHz Input Matching Network Optimization Goal: To reduce the PCB space required to match the AP603 at 2010-2025 MHz Methodology: 1. Characterize the small-signal performance and linearity performance of the AP603 TDSCDMA evaluation board to
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AP603
1-800-WJ1-4401
L-705
AP602
matching network
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electromagnetic pulse generator kit
Abstract: No abstract text available
Text: Signal Sources 2023A/B, 2025 Signal Generators With its level of performance, this compact general purpose signal generator delivers outstanding value for money. • Wide frequency coverage:9 kHz to 1.2 GHz 2023A 9 kHz to 2.05 GHz (2023B) 9 kHz to 2.51 GHz (2025)
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023A/B,
2023B)
electromagnetic pulse generator kit
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Untitled
Abstract: No abstract text available
Text: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path
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PXAC201602FC
PXAC201602FC
140-watt
H-37248-4
10ubstances.
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c5706
Abstract: c5706 equivalent c5803 c5706 equivalent transistor Transistor C5706 c2314 C5802 transistor c5802 T2al250V round fuse c5706 transistor
Text: AM/FM SIGNAL GENERATORS 2023A, 2023B, 2025 Operating Manual Document part no. 46892/373 AM/FM SIGNAL GENERATOR 2023A 2023B 9 kHz−1.2 GHz 9 kHz−2.05 GHz 2025 9 kHz−2.51 GHz Includes information on: Option 1: Option 2: Option 3: Option 4: Option 5: Option 7:
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2023B,
2023B
c5706
c5706 equivalent
c5803
c5706 equivalent transistor
Transistor C5706
c2314
C5802 transistor
c5802
T2al250V round fuse
c5706 transistor
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Untitled
Abstract: No abstract text available
Text: ATTENUATOR SURFACE MOUNT 7 WATT DATA SHEET PART NUMBER: 83A8054XX.XXF FEATURES EN 12-2025 11/09/2012 SHEET 1 OF 2 APPLICATIONS DC – 3.0 GHz 7 Watt Alumina Substrate Low VSWR Mobile Networks Broadcast High Power Amplifiers Instrumentation Isolators Military
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83A8054XX
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VG111
Abstract: No abstract text available
Text: Application Note VG111 2010-2025 MHz Reference Design Summary Measured RF Performance The VG111 variable gain amplifier can operate over a very broad range of frequencies with suitable matching circuits for specific bands of interest. This application note details the
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VG111
VG111"
1-800-WJ1-4401
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AN31
Abstract: Si2200 Si2200-X-GM
Text: Si2200 RF SYNTHESIZER WITH INTEGRATED VCOS FOR SATELLITE RADIO Features ! Dual-band RF synthesizers " " ! ! ! ! IF synthesizer " ! RF1: 2300 to 2500 MHz RF2: 2025 to 2300 MHz ! 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators ! ! Minimal external components
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Si2200
28-lead
Si2200-GM
Si2200
AN31
Si2200-X-GM
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AN2025
Abstract: PS2811-1-M zener 8.2V LM8261M5 zetex bat54a power supply LED 10w bav70tp SANYO 220uF 16V ser2010-122mx LM5110-1M
Text: National Semiconductor Application Note 2025 Ajay Hari February 17, 2010 Introduction Theory of Operation The LM5039 evaluation board is designed to provide the design engineer with a fully functional power converter based on the half-bridge topology to evaluate the LM5039 controller.
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LM5039
1V/30V
AN-2025
AN2025
PS2811-1-M
zener 8.2V
LM8261M5
zetex bat54a
power supply LED 10w
bav70tp
SANYO 220uF 16V
ser2010-122mx
LM5110-1M
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Untitled
Abstract: No abstract text available
Text: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution
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BLD6G21L-50;
BLD6G21LS-50
BLD6G21L-50
BLD6G21LS-50
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TL272
Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty
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PTFB201402FC
PTFB201402FC
H-37248-4
17ubstances.
TL272
tl271
TL274
5228 voltage regulator
TL279
TL246
c221 TRANSISTOR
TL-250
tl2741
HD 1077 O
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CPT-8-2025
Abstract: No abstract text available
Text: CPT-8-2025 Temperature Compensated Power Amplifier 2 GHz - 8 GHz This Power Amplifier offers exceptional performance over the band 2 GHz to 8 GHz with 30 dBm P1dB output power and 32 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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CPT-8-2025
CPT-8-2025
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Untitled
Abstract: No abstract text available
Text: Whpì H EW LETT mL'EM PACKARD Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF ampli
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TDA 2025
Abstract: TDA2025 30w tda power amplifier ic TDA 3612 TDA 2056 20w tda tda 50w TDA 1512 30w tda ic IC tda 2140
Text: SIEM ENS % y TDA 2025 50 Watt Power Amplifier Pin Configuration Pin Definitions Pin Function Non-Inverting Output Input Vs Power Ground Hum Suppression Pre-Stage Ground Inverting Output The TDA 2025 is a 20W to 50W watt power amplifier for Automotive and Entertainment applications featuring
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Q67000-A8186
T0220/7
TDA 2025
TDA2025
30w tda power amplifier ic
TDA 3612
TDA 2056
20w tda
tda 50w
TDA 1512
30w tda ic
IC tda 2140
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utc 2025
Abstract: UTC 225 Avantek* UTC 2025 UTC2025 Avantek uto amp
Text: Whnl HEWLETT mílfíMPACKARD Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ • Low Noise: 3.0 dB (Typ)
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