32R2020R

Abstract: 32R2020R-4CL 2020R
Contextual Info: SSI 2020R/2021R M M M b n s 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device * A TDK G roup/C om pany January 1993 DESCRIPTION FEATURES The SSI 32R 2020R /2021R are bipolar m onolithic inte­ grated circuits designed for use with tw o-term inal re­

YPDV2020R

Abstract: YPDV2020RA pin photodetector 1550 C band 2020R OC-768
Contextual Info: Datasheet 50 GHz SMD Photodetector Product Code: 2020R A Product Description The photodetector modules YPDV 2020R contains the well-established waveguide-integrated pin-photodiode (PD). They are designed to exhibit optimized frequency performance in both, power and phase. A linear response up to an optical input power of 13 dBm is a unique feature of these modules.

Contextual Info: ROVE D Radial Toroidal Inductors # IN DU CT AN CE TO µ LE H RA NC E Q MI NI MU M TE ST FR EQ UE SR NC F MI Y NI (M M DC Hz UM ) R MA ES (M Hz XI IST ) M A CU UM NC RR (O E MA E HM XI NT S MU R ) M ATI (m NG A) L I TA R Y PP DA SH MI MI L A NU MB ER * 2020R

Contextual Info: ROVE D Radial Toroidal Inductors # IN DU CT AN CE TO µ LE H RA NC E Q MI NI MU M TE ST FR EQ UE SR NC F MI Y NI (M M DC Hz UM ) R MA ES (M Hz XI IST ) M A CU UM NC RR (O E MA E HM XI NT S MU R ) M ATI (m NG A) L I TA R Y PP DA SH MI MI L A NU MB ER * 2020R

32R2020R

Abstract: 32R2020R-4CL 32R2020 32R2020R-4CV 32R2021R-4CV 32R2020R-6CV 32R2020R4CV
Contextual Info: SSI 2020R/2021R ¿mmsitskms 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device A TDK G ro u p /c o m p a n y' January 1993 DESCRIPTION FEATURES The SSI 2020R/2021R are bipolar monolithic inte­ grated circuits designed for use with two-terminal re­

32R2020R

Abstract: 32R2020R-4CV 32R2020 32R2020R-8CM 32R2020V-4CL 32R2020-8CM H5Y8 32R2020-6CV
Contextual Info: óémsiàms SSI 2020R/2021R/2023R 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device • C o m p a n y A T D K G r o u p /[C March 1994 DESCRIPTION FEATURES T he SSI 32 R 2 020 R /20 21 R /202 3R are b ip o la r monolithic integrated circuits designed for use with

TLS2271

Abstract: 32H6742 schematic diagram of seagate hard disk pcb tls2270 TLS2247 TLS2251 TLS2245 1575R SP4107A 32H6910
Contextual Info: TABLE OF CONTENTS How to use the Data CD-ROM Texas Instruments Storage Products Overview Alpha/Numeric Index 2000 Short Form Catalog Discontinued Parts List DSP and ASIC Quality and Technology HDD Read/Write Amplifiers MR Head Read/Write Thin-Film Head Read/Write

32R2300R-4CL

Abstract: 32R2020R
Contextual Info: SSI 32R2300/2300R/2301/2301R cM M S U flm 3.3V, 5V, 2, 4-Channel 2-Terminal Read/W rite Device S A TDK Group/Company December 1993 DESCRIPTION FEATURES +3.0V to +5.5V voltage supply The SSI 32R2300/2300R are BiCMOS monolithic inte­ grated circuits designed for use with two-terminal re­

Contextual Info: SILICON SYSTEMS INC b l E ]> • 3253^5 DOObbS? 7^0 SSI 32R2300/2300R/2301/2301R +3.3V/5.0V, 2, 4-Channel 2-Terminal Read/W rite Device ¿ m m s u s k m s ' A TDK Group/Company Advance Information December 1992 DESCRIPTION FEATURES “ T-S2_-3fc +3.0V - 5.5V voltage supply

Contextual Info: . f . S S I r ¿mm systems’ Th. 3 2 R 2 0 2 0 R /2 0 2 1 R v' 2-4'ri6j ° ; c^ nnei Thin-Film Read/Write Device A TDK Group/Company January 1993 DESCRIPTION FEATURES The SSI 2020R/2021R are bipolar monolithic inte­ grated circuits designed for use with two-terminal re­

32R2020R

Abstract: 32R2020R-4CL
Contextual Info: SSI 2020R/2021R cm m M 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device b t is * A TDK Group/Company January 1993 DESCRIPTION FEATURES The SSI 2020R/2021R are bipolar monolithic inte­ grated circuits designed for use with two-terminal re­ cording heads. They provide a low noise read ampli­

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

MS214

Abstract: 2020R MU MARKING CODE
Contextual Info: R F NG TI RA A T m EN UM RR IM CE CU AX AN ) M ST S SI HM RE (O M DC MU ) XI Hz (M MA M MU NI ) MI F Hz SR (M Y NC UE UM EQ IM IN FR M ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN SH DA MB ER Radial Toroidal Inductors * Actual Size -00K -02K -04K -06K

MS214

Abstract: MS21422 2020R
Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 8/24/10 3:40 PM Page 56 R F NG TI RA A T m EN UM RR IM CE CU AX AN ) M ST S SI HM RE (O M DC U M ) XI Hz (M MA M MU NI ) MI F Hz SR (M Y NC M UE EQ MU NI FR MI ST Q E TE NC RA LE TO H) (µ CE AN CT # DU IN SH

3B104

Contextual Info: SSI 32R2300/2300R/2301/2301R ¿ihmsiisfm' /c< 3.3V, 5V, 2 , 4-Channel 2-Terminal Read/Write Device A TDK Group ]Company December 1993 DESCRIPTION FEATURES The SSI 32R2300/2300R are BiCMOS monolithic inte­ grated circuits designed for use with two-terminal re­

Contextual Info: SSI 32R2300/2300R/2301/2301R ¿iumsuskms' 3.3V, 5V, 2, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company December 1993 DESCRIPTION FEATURES The SSI 32R2300/2300R are BiCMOS monolithic inte­ grated circuits designed for use with two-terminal re­

SN95PB5

Abstract: PB10
Contextual Info: Suggested Land Patterns Surface Mount Inductors Suggested Surface Mount Land Patterns See Figure 1 at left The dimensions listed here are suggested land patterns. The values in this table will usually provide for a positive solder fillet. The user may increase or decrease the

VTC, VM

Contextual Info: N ovem b e r 1996 ^Ék Micro Linear ML6320 3V/5V 4-Channel Thin-Film Read/Write Circuit G E N E R A L D E S C R IP T IO N FEATURES The M L6320 is a B£M 0 S m onolithiic read/W rite c irc u it desig n ed ib r u s e w ith tw o^terrn in a lre c o rd in g h e a d s, in the

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

MS-21422

Abstract: LT4K MS21422
Contextual Info: A MI L I TA R Y PP ROVE D RF INDUCTORS Physical Parameters Inches A 0.200 to 0.230 B 0.190 to 0.210 C 0.090 to 0.110 D 0.090 to 0.110 E 1.00 Min. F 0.0185 to 0.0215 Millimeters 5.08 to 5.84 4.83 to 5.33 2.29 to 2.79 2.29 to 2.79 25.40 Min. 0.47 to 0.55 Current Rating at 90°C Ambient 35°C Rise

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

PT1000 CONVERSION TABLE

Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
Contextual Info: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680

32R2020R-4CL

Abstract: 32R2020 32R2020R-2CN 32R2020R4CV 32R2020V-4CL
Contextual Info: SSI 2020R/2021R/2023R ¿ 5V, 2, 4, 6 , 10-Channel Thin-Film Read/Write Device ik m s ifs k tn s ’ A TDK Group/Company March 1994 DESCRIPTION FEATURES The SSI 2020R/2021R/2023R are bipolar monolithic integrated circuits designed for use with two-terminal recording heads. They provide a tow

32R2020R-4CL

Abstract: 32R2020R LB-5
Contextual Info: SSI 2020R/2021R ¿ ih m s if s b 5V, 2, 4, 6,10-Channel Thin-Film Read/Write Device tts A TDK Group/Company January 1993 DESCRIPTION FEATURES The SSI 2020R/2021R are bipolar monolithic inte­ grated circuits designed for use with two-terminal re­ cording heads. They provide a low noise read ampli­