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    201N25 Price and Stock

    United Chemi-Con Inc E36D201LPN252TDA5N

    Aluminum Electrolytic Capacitors - Screw Terminal 2500uF 200 Volt
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    Mouser Electronics E36D201LPN252TDA5N
    • 1 $18.96
    • 10 $18.61
    • 100 $13.65
    • 1000 $12.61
    • 10000 $12.61
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    United Chemi-Con Inc E36D201HPN252UE92M

    Aluminum Electrolytic Capacitors - Screw Terminal 2500uF 200 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics E36D201HPN252UE92M
    • 1 $22.72
    • 10 $20.93
    • 100 $18.53
    • 1000 $15.54
    • 10000 $15.54
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    VENKEL LTD CRG0201-N-2550FT

    RoHS 10/10 Green CR;0201;1/20W;255R;�1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. CRG0201-N-2550FT Reel 7 Weeks, 6 Days 15,000
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    VENKEL LTD CRG0201-N-2553FT

    RoHS 10/10 Green CR;0201;1/20W;255K ;�1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. CRG0201-N-2553FT Reel 7 Weeks, 6 Days 15,000
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    VENKEL LTD CRG0201-N-2552FT

    RoHS 10/10 Green CR;0201;1/20W;25.5K;�1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. CRG0201-N-2552FT Reel 7 Weeks, 6 Days 15,000
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    201N25 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    201N25 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF

    201N25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Directed Energy

    Abstract: 201N25 DE-275
    Text: PRELIMINARY SPECIFICATIONS DE-275 201N25 25A, 200V, 0.08Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-275 201N25 150oC Directed Energy 201N25

    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200


    Original     		PDF DE275-201N25A 201N25A 1100P DE275-201N25A

    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE275-201N25A 201N25A 1100P DE275-201N25A

    high power rf 10kW

    Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02
    Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order


    Original     		PDF DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics

    501N04

    Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05
    Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device


    OCR Scan     		PDF DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05