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    Text: 2016AM/AP SONY GaAs N-channel Dual-Gate MES FET Preliminary D escription SGM 2016AM The SGM 2016AM /AP is an N-channel dual-gate SG M 2016AP G aAs M ES FET for UHF-band low-noise amplification. This FE T is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,


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    PDF SGM2016AM/AP 2016AM 2016AM 2016AP 900MHz 2DD53 M-254