Untitled
Abstract: No abstract text available
Text: MDD175-28N1 High Voltage Standard Rectifier Module VRRM = 2x 2800 V I FAV = 240 A VF = 1.01 V Phase leg Part number MDD175-28N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current
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MDD175-28N1
60747and
20130813g
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Untitled
Abstract: No abstract text available
Text: MDD175-34N1 High Voltage Standard Rectifier Module VRRM = 2x 3400 V I FAV = 240 A VF = 1.01 V Phase leg Part number MDD175-34N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current
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MDD175-34N1
60747and
20130813g
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PDF
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Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
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255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
E72873
20130813g
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PDF
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Untitled
Abstract: No abstract text available
Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
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312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
E72873
20130813g
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PDF
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