E72873
Abstract: MWI450-12E9
Text: MWI 450-12 E9 IGBT Modules Sixpack IC80 = 440 A VCES = 1200 V VCE sat typ. = 2.2 V 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 3 E72873 See outline drawing for pin arrangement 5 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 125°C
|
Original
|
PDF
|
E72873
MWI450-12E9
20100401a
E72873
MWI450-12E9
|
E72873
Abstract: MWI450-12E9
Text: MWI 450-12 E9 IGBT Modules Sixpack IC80 = 440 A VCES = 1200 V VCE sat typ. = 2.2 V 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 E72873 3 See outline drawing for pin arrangement 5 Features IGBTs Conditions Maximum Ratings VCES
|
Original
|
PDF
|
E72873
MWI450-12E9
20100401a
E72873
MWI450-12E9
|
Untitled
Abstract: No abstract text available
Text: MWI 450-12 E9 IC80 = 440 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Sixpack 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 E72873 3 See outline drawing for pin arrangement 5 Features IGBTs Conditions Maximum Ratings VCES
|
Original
|
PDF
|
E72873
MWI450-12E9
20100401a
|
Untitled
Abstract: No abstract text available
Text: MWI 450-12 E9 IC8 0 = 440 A VCE S = 1200 V VCE sat ty=p . 2.2 V IGBT Modules Six p ack 2 28 4 15 20 25 16 17 21 22 26 27 11/ 12 29 6 13 14 9 / 10 18 19 7 /8 23 24 1 3 E 7 28 7 3 See ou tline draw ing f or p in arrangement 5 Features IGBTs VC C ondi ti ons
|
Original
|
PDF
|
MWI450-12E9
20100401a
|
ZY180L
Abstract: UL758
Text: VMO 1200-01F Advanced Technical Information HipPerFET Module VDSS = 100 V ID25 = 1220 A RDS on = 1.25 mΩ N-Channel Enhancement Mode D S D G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80
|
Original
|
PDF
|
1200-01F
UL758,
ZY180L
350mm
20100401a
UL758
|