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    200V 30A TRANSISTOR Search Results

    200V 30A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    200V 30A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF250

    Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
    Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International


    Original     		PDF 90338E IRF250 JANTX2N6766 JANTXV2N6766 O-204AA/AE) MIL-PRF-19500/543] an52-7105 IRF250 irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247

    Untitled

    Abstract: No abstract text available
    Text: RURG3020CC Data Sheet January 2002 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RURG3020CC RURG3020CC

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PDF PD-20615 HFA15TB60S HFA15TB60S 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,


    Original     		PDF SGH30N60RUFD

    HFA30TA60C

    Abstract: IRFP250
    Text: HFA30TA60C Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Base common cathode 2 BENEFITS • • • • • 2 Common cathode Anode 1 Reduced RFI and EMI Reduced power loss in diode and switching transistor


    Original     		PDF HFA30TA60C O-220AB HFA30TA60C 18-Jul-08 IRFP250

    4830A

    Abstract: No abstract text available
    Text: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,


    Original     		PDF SGH30N60RUFD SGH30N60RUFD SGH30N60RUFDTU AN-9017: AN-9017 4830A

    Untitled

    Abstract: No abstract text available
    Text: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,


    Original     		PDF SGL50N60RUFD O-264

    transistor c124

    Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118

    transistor c124

    Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor
    Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    Original     		PDF IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor

    600V 25A Ultrafast Diode

    Abstract: Diode 188 IRGPC40KD2
    Text: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


    Original     		PDF IRGPC40KD2 O-247AC. O-247AD) O-247AC 600V 25A Ultrafast Diode Diode 188 IRGPC40KD2

    035H

    Abstract: IRFPE30 IRG4PC40
    Text: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PC40FDPbF O-247AC IRFPE30 035H IRFPE30 IRG4PC40

    IRGPC40KD2

    Abstract: No abstract text available
    Text: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes


    Original     		PDF IRGPC40KD2 O-247AC. O-247AD) O-247AC IRGPC40KD2

    transistor C717

    Abstract: diode C722 diode C720 transistor C723 IRGPC40UD2 diode C721 diode c723 international rectifier 721 DIODE C719
    Text: PD - 9.808A IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGPC40UD2 O-247AC C-724 transistor C717 diode C722 diode C720 transistor C723 IRGPC40UD2 diode C721 diode c723 international rectifier 721 DIODE C719

    C644 transistor

    Abstract: C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2
    Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGP440UD2 O-247AC C-648 C644 transistor C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2

    IRFP250R

    Abstract: irfp 250r IRFP251R p250a IRFP252R IRFP253R IRFP25
    Text: Rugged Power MOSFETs_ IRFP250R, IRFP251R, IRFP252R, IRFP253R File Num ber 2016 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■


    OCR Scan     		PDF IRFP250R, IRFP251R, IRFP252R, IRFP253R 50V-200V IRFP252R IRFP253R IRFP25 IRFP250R irfp 250r IRFP251R p250a

    fls2

    Abstract: PPR1356 PPR1357 PPR1358 PPR1359
    Text: OD II I High Efficiency, 30A Center-Tap Diodes PPR1356 PPR1357 PPR1358 PPR1359 FEATURES ABSOLUTE MAXIMUM RATINGS • Very Low Forward Voltage Peak Inverse Voltage, PPR1356 200V • Very Fast S w itching Speed Peak Inverse Voltage, PPR1357 300V • Convenient Package


    OCR Scan     		PDF PPR1356 PPR1357 PPR1358 PPR1359 PPR1359 fls2

    brush dc motor control 200v 20a

    Abstract: No abstract text available
    Text: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the


    OCR Scan     		PDF PWR-82340 PWR-82342 PWR-82342 8234X-XX0 PWR-82340/342 brush dc motor control 200v 20a

    Untitled

    Abstract: No abstract text available
    Text: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the


    OCR Scan     		PDF PWR-82331 PWR-82333 PWR-82333 R-82331 8233X PWR-82331/333

    3010 IC

    Abstract: RURG
    Text: RURG3010, RURG3015, RURG3020 HARRIS S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft R ecovery. <45ns JE D EC S TYLE 2 L E A D TO -247 • Operating T em p eratu


    OCR Scan     		PDF RURG3010, RURG3015, RURG3020 RURG3015 RURG3020 3010 IC RURG

    IRF250R

    Abstract: IRF251R IRF252R IRF253R
    Text: _ Rugged Power MOSFETs IRF250R, IRF251R, IRF252R, IRF253R File Number 2004 Avalanche Energy Rated N-Channel Power M OSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N -C H A N N E L E N H A N C E M E N T M O D E D Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF 50V-200V 120fi IRF250R, IRF251R, IRF252R, IRF253R IRF252R IRF253R IRF250R IRF251R

    Untitled

    Abstract: No abstract text available
    Text: C fJ H A R R RURH3010CC, RURH3015CCt RURH3020CC I S s e m i c o n d u c t o r 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Package Features • Ultrafast with Soft Recovery Characteristic ‘ r r < 45ns JE D E C TO -218A C ANODE1 CATHODE ANODE2 • +175°C Rated Junction Temperature


    OCR Scan     		PDF RURH3010CC, RURH3015CCt RURH3020CC -218A RURH3015CC, RURH3020CC

    transistor 2n5330

    Abstract: transistor c63 NPN Transistor VCEO 80V 100V
    Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


    OCR Scan     		PDF 203mm) 40MHz 40MHz 300pF transistor 2n5330 transistor c63 NPN Transistor VCEO 80V 100V

    Transistor 200V 20A

    Abstract: SDT6338
    Text: [ ^ E iiy x g ir g Ä T Ä ii © MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER .J f o lit r o NPN EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available


    OCR Scan     		PDF 305mm) SDT6338 Transistor 200V 20A

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 3 7E D • Ô1331Ô7 SEMELAB JUL 0 6 ¡988 BUS 51 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for low voltage, high speed, power switching MECHANICAL DATA Dimensionsinmm FEATURES • LOW Vce sat * • 1-6 • FAST SWITCHING • HIGH SWITCHING CURRENTS


    OCR Scan     		PDF D00D173