2sk2365
Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
Text: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A
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2SK2983-ZJ
2SK2984-ZJ
2SK3056-ZJ
2SK2411-ZJ
2SK2513-ZJ
2SK2499-ZJ
2SK3058-ZJ
2SK3060-ZJ
2SK3062-ZJ
2SJ302-ZJ
2sk2365
MTB23P60E
TO-263AB
2sk2134
2SJ series
NEC 2sJ302
2SJ302
PHB24N03LT
2SJ328
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PBT-GF30 FR
Abstract: 7283-1020
Text: Automation Controls Catalog 10A and 80A types *20A type: only UL (Recognized) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type
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201402-T
PBT-GF30 FR
7283-1020
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YAZAKI7122-1407
Abstract: PBT-GF30 FR
Text: EP AEP (10A, 20A and 80A types) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type RoHS compliant 1. High-voltage, high-current control
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated
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FM400TU-3A
E323585
March-2013
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hall current transducer
Abstract: No abstract text available
Text: CUSTOMER CUSTOMER CODE PART DESCRIPTION HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 200A V. Output INTERNAL CODE HCT-BP2 DATE 23/08/10 EDITION 1 DOCUMENT NAME HCT-BP2_1.doc PAGE 1/6 HALL EFFECT CURRENT TRANSDUCER 200A OPEN LOOP VOLTAGE OUTPUT NOTES All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisati on.
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated
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FM400TU-07A
E323585
March-2013
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated
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FM400TU-2A
E323585
11ubishi
March-2013
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IEC61800-5-1
Abstract: IFS200V12PT4 IGBT Driver ic and 20khz AN2009-07 DIN125 DIN7984 IGBT collector voltage 5kV IEC60721 igbt sixpack B1148
Text: Technical Information MIPAQ serve IFS200V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 200A Load type
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IFS200V12PT4
IEC61800-5-1
IEC61800-5-1,
IEC61800-5-1
IFS200V12PT4
IGBT Driver ic and 20khz
AN2009-07
DIN125
DIN7984
IGBT collector voltage 5kV
IEC60721
igbt sixpack
B1148
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FS200R12KT4
Abstract: FS200R12KT4R E83335
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS200R12KT4R VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 200A / ICRM = 400A TypischeAnwendungen • Motorantriebe • Servoumrichter TypicalApplications • MotorDrives
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FS200R12KT4R
BarcodeCode128
FS200R12KT4
FS200R12KT4R
E83335
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS SD360B Green Products Technical Data Data Sheet N0566, Rev. A SD360B STANDARD RECTIFIER Features: Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 200A Peak
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SD360B
N0566,
SD360B
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IFS200V12PT4
Abstract: No abstract text available
Text: Technical Information MIPAQ serve IFS200V12PT4 preliminary data Key data Power module using IGBT4 technology in sixpack configuration. Isolated IGBT driver, protection and temperature sensor included. Topology B6I Rated semiconductor data 1200V, 200A Load type
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IFS200V12PT4
IEC61800-5-1
IEC61800-5-1,
IFS200V12PT4
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200EXS-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .
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CM200EXS-24S
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200EXS-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .
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CM200EXS-34SA
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .
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CM200DX-24S
UL1557,
E323585
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ifm 5078
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SEN-5078 PART NUMBER: SEN-5078, ENG. - 3-Phase Bridge + Dynamic Braking - IGBT Module 600V, 200A Features: • Multiple Layer, Moisture and Contamination Resistant Construction • Increased Creepage and Clearance Distances for High Altitude
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SEN-5078,
SEN-5078
10kHz,
1500Vrms,
ifm 5078
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .
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CM200DY-34A
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .
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CM200DX-34SA
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .
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CM200DX-24S
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200RXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .
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CM200RXL-24S
UL1557,
E323585
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Mitsubishi Materials Thermistor
Abstract: CM200DX-24S
Text: < IGBT MODULES > CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .
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CM200DX-24S
UL1557,
E323585
Mitsubishi Materials Thermistor
CM200DX-24S
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IE-200
Abstract: No abstract text available
Text: < IGBT MODULES > CM200DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .
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CM200DY-34A
UL1557,
E323585
IE-200
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .
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CM200DX-34SA
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200DX-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .
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CM200DX-34SA
UL1557,
E323585
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Untitled
Abstract: No abstract text available
Text: < IGBT MODULES > CM200RXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 200A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .
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CM200RXL-24S
UL1557,
E323585
20cessary
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