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    200A MOSFET Search Results

    200A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    200A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk2365

    Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
    Text: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A


    Original     		PDF 2SK2983-ZJ 2SK2984-ZJ 2SK3056-ZJ 2SK2411-ZJ 2SK2513-ZJ 2SK2499-ZJ 2SK3058-ZJ 2SK3060-ZJ 2SK3062-ZJ 2SJ302-ZJ 2sk2365 MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 PHB24N03LT 2SJ328

    Untitled

    Abstract: No abstract text available
    Text: STV270N4F3 N-channel 40V - 1.25mΩ - 200A - PowerSO-10 STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on ID (1) STV270N4F3 40V < 1.5mΩ 200A 10 1. Current limited by package 1 • Conduction losses reduced ■ Low profile, very low parasitic inductance


    Original     		PDF STV270N4F3 PowerSO-10

    "MOSFET Module"

    Abstract: E80276 FM400TU-3A mitsubishi MOSFET
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


    Original     		PDF FM400TU-3A E80276 E80271 "MOSFET Module" E80276 FM400TU-3A mitsubishi MOSFET

    DIODE T25 4

    Abstract: DIODE T25 FM400TU E80276 FM400TU-3A
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


    Original     		PDF FM400TU-3A E80276 E80271 19K/W DIODE T25 4 DIODE T25 FM400TU E80276 FM400TU-3A

    DIODE T25

    Abstract: DIODE T25 4 DIODE T25 4 do E80276 FM400TU-07A
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


    Original     		PDF FM400TU-07A E80276 E80271 19K/W DIODE T25 DIODE T25 4 DIODE T25 4 do E80276 FM400TU-07A

    "MOSFET Module"

    Abstract: E80276 FM400TU-07A 48V battery forklift
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


    Original     		PDF FM400TU-07A E80276 E80271 "MOSFET Module" E80276 FM400TU-07A 48V battery forklift

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


    Original     		PDF FM400TU-07A E80276 E80271 19K/W

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


    Original     		PDF FM400TU-2A E80276 E80271 19K/W

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


    Original     		PDF FM400TU-3A E323585 March-2013

    MOSFET 200A 24V

    Abstract: E80276 FM400TU-2A mitsubishi MOSFET N mosfet 100v 200A
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


    Original     		PDF FM400TU-2A E80276 E80271 MOSFET 200A 24V E80276 FM400TU-2A mitsubishi MOSFET N mosfet 100v 200A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID rms . 200A ● VDSS . 150V ● Insulated


    Original     		PDF FM400TU-3A E80276 E80271 19K/W

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-07A ● ID rms . 200A ● VDSS . 75V ● Insulated


    Original     		PDF FM400TU-07A E323585 March-2013

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


    Original     		PDF FM400TU-2A E323585 11ubishi March-2013

    DIODE T25

    Abstract: N mosfet 100v 200A "MOSFET Module" E80276 FM400TU-2A
    Text: MITSUBISHI <MOSFET MODULE> FM400TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-2A ● ID rms . 200A ● VDSS . 100V ● Insulated


    Original     		PDF FM400TU-2A E80276 E80271 19K/W DIODE T25 N mosfet 100v 200A "MOSFET Module" E80276 FM400TU-2A

    Module

    Abstract: FM200HB1D5B
    Text: SEMICONDUCTOR FM200HB1D5B TECHNICAL DATA 150V / 200A 2 - PACK MOSFET MODULE Half - Bridge FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Motor control ・Battery management system OUTLINE DRAWING


    Original     		PDF FM200HB1D5B -100A/us Module FM200HB1D5B

    N mosfet 250v 600A

    Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
    Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •


    Original     		PDF QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet QJQ0220001 mosfet low idss

    IXTK200N10L2

    Abstract: IXTX200N10L2 PLUS247 ixtk200n
    Text: Advance Technical Information IXTK200N10L2 IXTX200N10L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 100V = 200A Ω < 11mΩ RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXTK200N10L2 IXTX200N10L2 O-264 100ms 200N10L2 IXTK200N10L2 IXTX200N10L2 PLUS247 ixtk200n

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


    Original     		PDF UTT200N03 UTT200N03 UTT200N03L-TA3-T UTT200N03G-TA3-T UTT200N03L-TQ2-T UTT200N03G-TQ2-T UTT200N03L-TQ2-R UTT200N03G-TQ2-R QW-R502-758

    Untitled

    Abstract: No abstract text available
    Text: AP99T03GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Ultra-low On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 30V 2.5m 200A S Description


    Original     		PDF AP99T03GP-HF O-220 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Preliminary Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


    Original     		PDF UTT200N03 UTT200N03 O-220 UTT200N03L-TA3-T UTT200N03G-TA3-T QW-R502-758

    Untitled

    Abstract: No abstract text available
    Text: 30-F206NBA200SA-M295L33 preliminary datasheet flowBOOST2 600V/200A Features flowBOOST2 ● High power flow2 housing ● Thyristors for inrush current limitation ● Low inductive layout Target Applications Schematic ● UPS Types ● 30-F206NBA200SA-M295L33


    Original     		PDF 30-F206NBA200SA-M295L33 00V/200A

    Untitled

    Abstract: No abstract text available
    Text: TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor TRANSZorb Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only


    Original     		PDF TGL41-6 TGL41-200A J-STD-020, DO-213AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    200n60

    Abstract: 200N60A
    Text: VCES HiPerFAST IGBT ^C25 IXGN 200N60 600V 200A IXGN 200N60A 600V 200A V * CE sat tf. 2.5 V 350ns 2.7 V 200ns G é i V minIBLOC, SOT-227 B T e s t C o n d itio n s V CES T j = 25°C to150°C v CGR ^ v GES v’' gem Continuous ±20 V Transient ±30 V Tc = 25°C


    OCR Scan     		PDF 200N60 200N60A 350ns 200ns to150 OT-227 E153432 IXGN200N6Q

    200n60

    Abstract: u265 IXGM200N60 200N60A
    Text: v* CES HiPerFAST IGBT IC25 j vw C E sat t IXGN 200N60 600V 200A f 2.5 V 1350 ns IXGN 200N60A 600V 200A i 2.7 V 200 ns Symbol Maximum Ratings Test C onditions miniBLOC, SOT-227 B TO V CES T j =2 5°C to 150°C 600 V V CGR T,J = 25cC to 15 0°C; Rtab „ = 1 MQ


    OCR Scan     		PDF 200N60 200N60A OT-227 E153432 u265 IXGM200N60