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    200A GTO Search Results

    200A GTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP65S08DWA-00#W0 Renesas Electronics Corporation IGBT 650V 200A Wafer Visit Renesas Electronics Corporation
    RJP65S08DWT-80#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation
    RJP65S08DWT-00#X0 Renesas Electronics Corporation IGBT 650V 200A Chip Visit Renesas Electronics Corporation
    RJP1CS08DWT-80#X0 Renesas Electronics Corporation IGBT 1250V 200A Chip Visit Renesas Electronics Corporation
    RJP1CS08DWS-80#W0 Renesas Electronics Corporation IGBT 1250V 200A Sawn Visit Renesas Electronics Corporation

    200A GTO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DO-205AB

    Abstract: No abstract text available
    Text: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics


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    I2064 SD203N/R DO-205AB SD203N/R 12-Mar-07 DO-205AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics


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    I2064 SD203N/R DO-205AB SD203N/R 000V/ D203N/ PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics


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    I2064 SD203N/R DO-205AB SD203N/R 08-Mar-07 PDF

    DO-205AB

    Abstract: S10 diode
    Text: Bulletin I2064 rev. A 09/94 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 200A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics


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    I2064 SD203N/R DO-205AB SD203N/R SD203N/R. DO-205AB S10 diode PDF

    DO-205AB, DO-9

    Abstract: ka s15 DO-205AB 25S20 DO205AB stud diode 200A
    Text: Previous Datasheet Index Next Data Sheet Bulletin I2064/A SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 200A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics


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    I2064/A SD203N/R DO-205AB SD203N/R -16UNF-2A* DO-205AB, DO-9 ka s15 DO-205AB 25S20 DO205AB stud diode 200A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.


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    DSF11060SG DS4217-2 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. PDF

    Untitled

    Abstract: No abstract text available
    Text: JANUARY 1996 DSF21545SV DS4153-3.0 DSF21545SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.


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    DSF21545SV DS4153-3 0000A DSF21545SV DG858BW DSF21545SV45 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEPTEMBER 1995 DF685 DS4303-1.2 DF685 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.


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    DF685 DS4303-1 DF685 M779b. PDF

    DSF11060SG

    Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. DSF11060SG 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548 PDF

    FMBL1G200US60

    Abstract: GE power transistor list
    Text: IGBT FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMBL1G200US60 E209204 FMBL1G200US60 GE power transistor list PDF

    FM2G200US60

    Abstract: No abstract text available
    Text: IGBT FM2G200US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is


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    FM2G200US60 FM2G200US60 PDF

    1000A 100V power diode

    Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    DSF11060SG DS4217-2 DS4548 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. 1000A 100V power diode DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 PDF

    FM2G200US60

    Abstract: No abstract text available
    Text: FM2G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FM2G200US60 E209204 FM2G200US60 PDF

    dc to dc buck converter 200A

    Abstract: SMBH1G200US60
    Text: Preliminary SMBH1G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Buck(Step Down) Converter


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    SMBH1G200US60 dc to dc buck converter 200A SMBH1G200US60 PDF

    Untitled

    Abstract: No abstract text available
    Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling


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    DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. PDF

    300V dc dc boost converter

    Abstract: SMBL1G200US60
    Text: Preliminary SMBL1G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter


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    SMBL1G200US60 300V dc dc boost converter SMBL1G200US60 PDF

    dc welding machine circuit diagram

    Abstract: SM2G200US60
    Text: Preliminary SM2G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters


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    SM2G200US60 dc welding machine circuit diagram SM2G200US60 PDF

    Untitled

    Abstract: No abstract text available
    Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.


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    RHRP3060 RHRP3060 PDF

    Untitled

    Abstract: No abstract text available
    Text: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted


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    RURD660, RURD660S RURD660 RURD660S PDF

    Untitled

    Abstract: No abstract text available
    Text: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform­


    OCR Scan
    00V/200A. 00-4000A 300-6000V PDF

    RCA scr package N TO-8

    Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
    Text: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228


    OCR Scan
    75AdPMl S2400A S3704A S3714A 2N3528 S2400B 2N3228 S3700B S3704B S2710B RCA scr package N TO-8 rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2N4102 ignition tci PDF

    2n3528

    Abstract: rca 2N4102 scr 2n3668 2N3529 2N3525 RCA scr package N TO-8 S3703SF 2N4102 Scans-00105564 2N3228
    Text: SCR Product Matrix T O -i TO -66 TO 6 6 W ith Heat Rad. ^ f ¡'3SSSL. Jw a ip | RCA SCR's N D 'T R M S •t SM (6 0 Hz) v DROM 15 v RROM 25 30 2A 4 .5 A 5A 60A 200A 60A F ro * FTO ' FTO * 5A FTO * 5A FTO * 5A 80A 5A 5A FTO * 5A 5A 5A 80A 80A 7 5 A * I PM)


    OCR Scan
    75AdPMl S2400A S3704A S3714A 2N3528 S2400B 2N3228 S3700B S3704B S2710B rca 2N4102 scr 2n3668 2N3529 2N3525 RCA scr package N TO-8 S3703SF 2N4102 Scans-00105564 2N3228 PDF

    2n3528

    Abstract: S2800D scr 2n6396 2N6396 2N4103 S2060D S2600M 2N3228 2N3529 S2400A
    Text: SCR Product Matrix T O -i TO -66 TO 6 6 W ith Heat Rad. ^ f ¡'3SSSL. Jw a ip | RCA SCR's N D 'T R M S •t SM (6 0 Hz) v DROM 15 v RROM 25 30 2A 4 .5 A 5A 60A 200A 60A F ro * FTO ' FTO * 5A FTO * 5A FTO * 5A 80A 5A 5A FTO * 5A 5A 5A 80A 80A 7 5 A * I PM)


    OCR Scan
    75AdPMl S2400A S3704A S3714A 2N3528 S2400B 2N3228 S3700B S3704B S2710B S2800D scr 2n6396 2N6396 2N4103 S2060D S2600M 2N3228 2N3529 S2400A PDF

    USD1120

    Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
    Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A


    OCR Scan
    DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702 PDF