power diode 200A
Abstract: welding rectifier 200a rectifier diode
Text: DIODE NON-ISOLATED TYPE MDF(R)200A MDF R 200A is a diode with flat mounting base which is designed for use in various rectifier applications. IF AV 200A, VRRM 500V Easy Construction with Anode F Type and Cathode R type. High reliability by glass passivation
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200A30
200A40
200A50
50Hz/60Hz,
power diode 200A
welding rectifier
200a rectifier diode
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Untitled
Abstract: No abstract text available
Text: DIODE 200A Avg 800 Volts PD200S8
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PD200S8
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Untitled
Abstract: No abstract text available
Text: DMM,1KV AC/DC DM-200A (CALIB) Digital Multimeter Cat No: DM-200A-C UPC No: 783310357568 Description • • • • • • • • • • • Measures Voltage, Current, Resistance And Frequency Tests Continuity And Diodes Backlit LCD With 6,000 Count Display
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DM-200A)
DM-200A-C
RS-232
3000MFD
DM-210A,
DM-510A
F/204
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V
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TM200RZ/EZ/GZ-M
400/800/1200/1600V
E80276
E80271
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PDF
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200A thyristor gate control circuit
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V
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TM200RZ/EZ/GZ-M
400/800/1200/1600V
E80276
E80271
200A thyristor gate control circuit
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODE NON-ISOLATED TYPE MDF(R)200A MDF （R） 200A is a diode with flat mounting base which is designed for use in various rectifier applications. 4-φ7 32 2 VRRM＝500V ● Easy Construction with Anode （F） Type and Cathode （R） type. ● High reliability by glass passivation
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VRRM500V
200A30
200A40
200A50
Tj25start
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IGBT 600V 200A
Abstract: diode 300v 200A 18KHZ SIM200D06AV1 smps 200a diode rjc rcs
Text: SIM200D06AV1 Preliminary “HALF-BRIDGE” IGBT VCES = 600V Ic= 200A Feature Applications ▪ Smart field stopper +Trench ▪ Motor controls VCE ON typ. = 1.8V @Ic= 200A ▪ VVVF inverters design technology ▪ Inverter-type welding MC over 18KHZ ▪ Low VCE (sat)
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SIM200D06AV1
18KHZ
20KHz
IGBT 600V 200A
diode 300v 200A
18KHZ
SIM200D06AV1
smps 200a
diode rjc rcs
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mdf 24
Abstract: No abstract text available
Text: DIODE NON-ISOLATED TYPE MDF(R)200A MDF （R） 200A is a diode with flat mounting base which is designed for use in various rectifier applications. 4-φ7 32 2 VRRM＝500V ● Easy Construction with Anode （F） Type and Cathode （R） type. ● High reliability by glass passivation
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VRRM500V
200A30
200A40
200A50
Tj25start
mdf 24
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18KHZ
Abstract: SIM200D06AV2
Text: SIM200D06AV2 Preliminary “HALF-BRIDGE” IGBT VCES = 600V Ic= 200A Feature Applications ▪ Smart field stopper +Trench ▪ Motor controls VCE ON typ. = 1.6V @Ic= 200A ▪ VVVF inverters design technology ▪ Inverter-type welding MC over 18KHZ ▪ Low VCE (sat)
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SIM200D06AV2
18KHZ
20KHz
18KHZ
SIM200D06AV2
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Untitled
Abstract: No abstract text available
Text: STV270N4F3 N-channel 40V - 1.25mΩ - 200A - PowerSO-10 STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on ID (1) STV270N4F3 40V < 1.5mΩ 200A 10 1. Current limited by package 1 • Conduction losses reduced ■ Low profile, very low parasitic inductance
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STV270N4F3
PowerSO-10
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200A thyristor gate control circuit
Abstract: Thyristor 1600V E80276 HIGH VOLTAGE THYRISTOR
Text: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H • IT AV • IF (AV) • VRRM • • • • Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage
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TM200RZ/EZ/GZ-M
400/800/1200/1600V
E80276
E80271
K1160
200A thyristor gate control circuit
Thyristor 1600V
E80276
HIGH VOLTAGE THYRISTOR
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PBT-GF30 FR
Abstract: 7283-1020
Text: Automation Controls Catalog 10A and 80A types *20A type: only UL (Recognized) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type
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201402-T
PBT-GF30 FR
7283-1020
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YAZAKI7122-1407
Abstract: PBT-GF30 FR
Text: EP AEP (10A, 20A and 80A types) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type RoHS compliant 1. High-voltage, high-current control
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igbt 1200v 600a
Abstract: IGBT DRIVE 600V 300A 1MBI150NH-060 1MBI150NK-060 1MBI200N-120 1MBI200NH-060 1MBI200NK-060 1MBI300N-120 M127 600V 200A TR
Text: N Series,1 in one Low-noise,High-speed switcing Device Type Features Page VCES IC 1MBI150NH-060 600V/150A Chopper Module 4 600V max 150A max 1MBI150NK-060 600V/150A Chopper Module 4 600V max 150A max 1MBI200N-120 1200V/200A 1 in one-package 4 1200V max 200A max M127
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1MBI150NH-060
00V/150A
1MBI150NK-060
1MBI200N-120
200V/200A
1MBI200NH-060
00V/200A
1MBI200NK-060
igbt 1200v 600a
IGBT DRIVE 600V 300A
1MBI200N-120
1MBI300N-120
M127
600V 200A TR
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CM200DX-24A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡IC . 200A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /
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CM200DX-24A
10K/W
19K/W
CM200DX-24A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM200RX-12A
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CM200DX-24A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡IC . 200A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /
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CM200DX-24A
CM200DX-24A
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1MBI200F-120
Abstract: M116
Text: 1MBI200F-120 200A IGBT Module 1200V / 200A 1 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series
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1MBI200F-120
E82988
1MBI200F-120
M116
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1SR35-100
Abstract: No abstract text available
Text: 3t — K/Diodes 1SR35-100A/1SR35-200A/1SR35-400A 1SR35-1OOA/1SR35-200A 1SR35-400A Silicon Diffused Junction Glass-Sealed Rectifying Diodes 1 * '- 7 3 JEDEC : DO- 41 )„ 2) • Features 1) Glass sealed type (JEDEC : DO41). 2) High reliability. • JBÎÊ
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1SR35-100A/1SR35-200A/1SR35-400A
1SR35-1OOA/1SR35-200A
1SR35-400A
1SR35-100A
1SR35-200A
1SR35-100
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Untitled
Abstract: No abstract text available
Text: DIODE NON-ISOLATED TYPE MDF(R)20QA M D F(R )200A is a diode with flat mounting base which is designed for use in various rectifier applications. • If(av) = 200A, VrrM= 500V • Easy Construction with Anode (F) Type and Cathode (R) Type. • High reliability by glass passivation
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OCR Scan
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200A50
B-153
B-154
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PDF
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1SR124-400A
Abstract: No abstract text available
Text: 1SR124-1OOA/1SR124-200A/1SR124-400A K/Diodes 1S R 1 24-1 OOA/1 S R I 24-200A 1S R I 24-400A -> <j □ <* - k Silicon Diffused Junction Glass-Sealed High-Speed Rectifying Diodes • ^J^j'&HI/'Dim ensions U nit: mm 1) (JEDEC : DO41 ) o 2) ra iS S (trr= 0 .4
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OCR Scan
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1SR124-1OOA/1SR124-200A/1SR124-400A
4-200A
4-400A
1SR124-100A
1SR124-200A
1SR124-400A
1SR124-100A/1SR124-200A/1SR124-400A
1SR124-400A
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1SR35-400A
Abstract: 1SR35-100A 1SR35-200A SR35-200A
Text: 1SR35-1OOA/1SR35-200A/1SR35-400A — K /D iodes 1SR35-1 OOA/1 SR35-200A 1SR35-400A •> 'j 3 •< t - k Silicon Diffused Junction Glass-Sealed Rectifying Diodes • 1 Dimensions Unit : mm) -5 (JE D E C : DO41)» 2) &o • Features 1) G lass se a le d ty p e (JEDEC : D O 41).
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1SR35-1OOA/1SR35-200A/1SR35-400A
1SR35-1
SR35-200A
1SR35-400A
1SR35-100A
1SR35-200A
1SR35-400A
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H It av Average on-state current 200A Average forward current 200A V rrm Repetitive peak reverse voltage 400/800/1200/1600V V drm Repetitive peak off-state voltage
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OCR Scan
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TM200RZ/EZ/GZ-M
400/800/1200/1600V
E80276
E80271
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PDF
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1sr124-100a
Abstract: 1sr124-400 1SR124
Text: 1SR124-1OOA/1SR124-200A/1SR124-400A X — K/Diodes 1SR 124-1 OOA/1 S R 124-200A 1S R 1 2 4 -4 0 0 A Silicon Diffused Junction Glass-Sealed High-Speed Rectifying Diodes • ^ J fi^ tiiE I/D im e n s io n s U n it : mm • « ft 1) (JEDEC : DO41)» 2) ¡ f i l l
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OCR Scan
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1SR124-
1OOA/1SR124-
24-200A
1SR124-100A
1SR124-200A
1SR124-400A
1SR124-100A/
1sr124-400
1SR124
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