IRHM7230
Abstract: IRHM8230
Text: PD - 90713C IRHM7230 IRHM8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90713C
IRHM7230
IRHM8230
200Volt,
1x106
IRHM7230
IRHM8230
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IRFE210
Abstract: JANTX2N6784U JANTXV2N6784U
Text: Provisional Data Sheet No. PD - 9.1722 IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 200Volt, 1.5Ω Product Summary The leadless chip carrier LCC package represents
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IRFE210
JANTX2N6784U
JANTXV2N6784U
MIL-PRF-19500/556]
200Volt,
IRFE210
JANTX2N6784U
JANTXV2N6784U
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PDF
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SB10200C
Abstract: No abstract text available
Text: E L E C T R O N I C SB10200C Power Schottky Rectifier - 10Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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SB10200C
10Amp
200Volt
SB10200C
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MBR20H200CT
Abstract: MBR20H200FCT
Text: E L E C T R O N I C MBR20H200CT/FCT Power Schottky Rectifier - 20Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR20H200CT/FCT
20Amp
200Volt
MBR20H200CT
MBR20H200FCT
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sb3200
Abstract: SB3150 diode sb340 SB340 SB34 schottky sb3200 sb340 diode Sirectifier Semiconductors SB31 SB3100
Text: E L E C T R O N I C SB340 ~ SB3200 Power Schottky Rectifier - 3Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic
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SB340
SB3200
200Volt
MIL-STD-202
SB360
SB3100
SB3150
sb3200
SB3150
diode sb340
SB340
SB34
schottky sb3200
sb340 diode
Sirectifier Semiconductors
SB31
SB3100
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C MBR20200CG Power Schottky Rectifier - 20Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR20200CG
20Amp
200Volt
O-263
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SB315
Abstract: schottky rectifier 3amp sb3200
Text: E L E C T R O N I C SB3150FC~SB3200FC Power Schottky Rectifier - 3Amp 150~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic
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SB3150FC
SB3200FC
200Volt
MIL-STD-202
SB3150FC
SB315
schottky rectifier 3amp
sb3200
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PDF
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SB140
Abstract: SB1200 SB1100 SB14 SB16 SB160
Text: E L E C T R O N I C SB140 ~ SB1200 Power Schottky Rectifier - 1Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic
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SB140
SB1200
200Volt
MIL-STD-202
SB160
SB1100
SB1150
SB140
SB1200
SB1100
SB14
SB16
SB160
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PDF
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MBR20H200FCT
Abstract: No abstract text available
Text: E L E C T R O N I C MBR20H200FCT Power Schottky Rectifier - 20Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR20H200FCT
20Amp
200Volt
ITO-220AB
MBR20H200FCT
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PDF
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SB315
Abstract: sb3200 sb3200c
Text: E L E C T R O N I C SB3150C~SB3200C Power Schottky Rectifier - 3Amp 150~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction □ Mechanical data -Case：Molded plastic
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SB3150C
SB3200C
200Volt
MIL-STD-202
SB3150C
SB315
sb3200
sb3200c
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PDF
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SB5150
Abstract: SB5200
Text: E L E C T R O N I C SB5150~SB5200 Power Schottky Rectifier - 5Amp 150~200Volt DO-27 / DO-201AD □ Features .375 9.5 .285(7.2) 1.0(25.4) -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction
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SB5150
SB5200
200Volt
DO-27
DO-201AD
MIL-STD-202
SB5150
SB5200
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PDF
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MBR30200PT
Abstract: No abstract text available
Text: E L E C T R O N I C MBR30200PT Power Schottky Rectifier - 30Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR30200PT
30Amp
200Volt
MBR30200PT
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C MBR10L200CT Power Schottky Rectifier - 10Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR10L200CT
10Amp
200Volt
O-220AB
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SBR56
Abstract: SBR520
Text: E L E C T R O N I C SBR54 ~ SBR520 Power Schottky Rectifier - 5Amp 40~200Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency
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SBR54
SBR520
200Volt
MIL-STD-750
SBR54
SBR56
SBR520
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KSF30A40B
Abstract: No abstract text available
Text: FRD T y p e : KSF30A F30A40B OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings
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KSF30A40B
O-247AC
200Volts
600Volts
KSF30A40B
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88W51
Abstract: ET630
Text: ET630 9 Amps， 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
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ET630
200Volts
ET630
00A/s
Width300s
88W51
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ksf30a60b
Abstract: No abstract text available
Text: FRD T y p e : KSF30A F30A60B OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings
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KSF30A
F30A60B
O-247AC
200Volts
600Volts
KSF30A60B
KSF30A60B/KSF30A60E
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Untitled
Abstract: No abstract text available
Text: FRD T y p e : KSF30A F30A40B OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings
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KSF30A
F30A40B
O-247AC
200Volts
600Volts
KSF30A40B
KSF30A40B/KSF30A40E
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PDF
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Untitled
Abstract: No abstract text available
Text: FRD T y p e : KSF30A F30A40E OULINE DRAWING FEATURES * Similar to TO-247AC TO-3P Case * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Current Capability * 200Volts thru 600Volts Type Available Maximum Ratings
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KSF30A
F30A40E
O-247AC
200Volts
600Volts
KSF30A40E
KSF30A40B/KSF30A40E
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PDF
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1614 International I R Rectifier IRLF230 HEXFET TRANSISTOR N -C H A N N E L Product Summary 200Volt, 0.40 Q, HEXFET T h e L o g ic L e ve l ‘L’ s e rie s o f p o w e r M O S F E T s are d e s ig n e d to be o p e ra te d w ith le ve l lo g ic g a te -to s o u rc e v o lta g e o f 5V. In a d d itio n to th e w e ll e s
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IRLF230
200Volt,
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1332B International TOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 200Volt, 0.070Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r ’ s R A D H A R D te c h n o lo g y
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1332B
IRHM7260
IRHM8260
200Volt,
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PDF
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International Rectifier 9240
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1554A International IQR Rectifier HEXFET POWER MOSFET IRFN9240 P-CHANNEL -200Volt, 0.51 a HEXFET Product Summary H E X F E T technology is the key to International Rectifier’s advanced line of power M OSFET transis tors. The efficient geometry achieves very low on-state
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IRFN9240
-200Volt,
International Rectifier 9240
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PDF
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Untitled
Abstract: No abstract text available
Text: P D - 9.1717 International Rectifier I R IRFE9230 JANTX2N6851 U R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D JANTXV2N6851 U HEXFET TRANSISTOR JANS2N6851 U [REF:MIL-PRF-19500/564] P -C H A N N E L Product Summary B V dss Part Number -200Volt, 0.80ft, HEXFET
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IRFE9230
JANTX2N6851
JANTXV2N6851
JANS2N6851
MIL-PRF-19500/564]
-200Volt,
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PDF
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Untitled
Abstract: No abstract text available
Text: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology
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IRHM7260
IRHM8260
200Volt,
070ft,
55MS2
500X1
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PDF
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