VISHAY MARKING CODE
Abstract: marking code capacitors Part marking
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . CAPACITORS Capacitors – High Temperature 200oC , High Reliability SMD Tantalum Molded Chip TH5 Tantalum TH5 - HI TMP Solid Tantalum Surface-Mount Capacitors Key Benefits APPLICATIONS • Application voltage: 21 V and 24 V at + 200 °C
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200oC)
02-Jul-13
VISHAY MARKING CODE
marking code capacitors
Part marking
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aegis A1B
Abstract: 1571A 5511 DO-205AB, DO-9 DO-205AB
Text: AEGIS SEMICONDUTORES LTDA. A1A:500.XX VOLTAGE RATINGS Part Number VRRM , VR V rep. peak reverse voltage This datasheet applies to: Max. VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 0 to 200OC TJ = -40 to 0 C TJ = 25 to 200 C A1A:500.02 200 200 300
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200OC
DO-205AB
aegis A1B
1571A
5511
DO-205AB, DO-9
DO-205AB
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AN-1559
Abstract: 08635 RTD PT100 R10634 rtd pt100 -50 to 200 PT1000 RTD LM4140 LMP7702 LMP7704 PT1000
Text: 应用注释1559 Chris Eckert，Ron Bax 2007年6月 1.0 用途 100，500和1000分别表示在0 oC处的相应阻值。从－ 本应用注释致力于讨论电阻温度器件及其常用的接 200oC变化至0oC的范围，它们的阻值与温度的特性可以
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200oC0oC
RR01AtBt2
Ct100t3
C850oC
RR01AtBt2
103oC1,
1012oC
PT100
RTDPT100PT500PT1000
AN-1559
AN-1559
08635
RTD PT100
R10634
rtd pt100 -50 to 200
PT1000 RTD
LM4140
LMP7702
LMP7704
PT1000
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ASTM d882-83
Abstract: ISO1817 raychem specification viton-e 4G-198 VG 95343 RK-6014 heat-shrinkable tubing Raychem VG-95343 ASTM d882
Text: • Operating temperature range -55oC to +200oC VITON-E • Flame retarded • Shrink ratio 2:1 Heat-shrinkable, chemical resistant, high temperature tubing military requirements. Quickly and simply installed, resistant to weather, radiation and ozone, Viton-E
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-55oC
200oC
RI0041
ASTM d882-83
ISO1817
raychem specification
viton-e
4G-198
VG 95343
RK-6014
heat-shrinkable tubing Raychem
VG-95343
ASTM d882
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vanguard 31009-NT
Abstract: 1854 0003
Text: Chip Inductors for Extreme Environments XT34000 Series 200oC Operating Temperature VANGUARD ELECTRONICS 17941 Brookshire Lane Huntington Beach, CA 92647 Ph: 714-842-3330 NO TABS Laser Marked VE00 uH 100 0.020 + 0.005 0.51 + 0.13 ELECTRICAL SPECIFICATIONS
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XT34000
200oC
XT34055
XT34056
XT34057
XT34058
XT34059
XT34060
XT34060
XT34000
vanguard 31009-NT
1854 0003
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GM200-71-14-16
Abstract: GM250-127-14-16 thermoelectric power generation GM250-127-28-35 GM200-127-14-16 GM200-49-45-25 GM200-127-28-35
Text: THERMOELECTRIC POWER GENERATION MODULES 200oC TEG Tested at Hot Side Temperature: 200oC, Cold Side Temperature: 50oC RS Part No. MPN Couples Voc (V) Rin (Ω) Imax (A) Pmax (W) 6937028 GM200-127-10-15 127 7.00 7.70 1.60 1.60 6937030 GM200-71-14-16 71 3.90
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200oC
200oC,
GM200-127-10-15
GM200-71-14-16
GM200-127-14-16
GM200-31-28-35
GM200-127-28-35
GM250-127-14-16
GM250-31-28-35
GM250-127-28-35
GM200-71-14-16
GM250-127-14-16
thermoelectric power generation
GM250-127-28-35
GM200-127-14-16
GM200-49-45-25
GM200-127-28-35
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duraseal
Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
Text: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 james.scofield@wpafb.af.mil James Richmond and
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200oC
duraseal
SiC IGBT High Power Modules
sic wafer 100 mm
Wacker Silicones
28Cu72Ag
wacker
100C
parallel mosfet
Cree SiC MOSFET
silicon carbide
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Untitled
Abstract: No abstract text available
Text: Soldering Conditions Reflow Condition for SMD Crystal/Oscillator 10 1 Secs 240oC 235 200oC 30 10 Secs 150oC +/-10oC 80 30 Sec Pre Heat o 25 C 50C
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240oC
200oC
150oC
/-10oC
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1N4151-1
Abstract: DO35 package 40044 Switching diode 50V 200mA
Text: 1N4151-1 ESA QUALIFIED Switching Diode FEATURES • • • • Qualified to ESA/SCC 5101/025 Metallurgical Bond DO-35 Package Hermetically Sealed Glass Package 1.53/ 2.28 12.7min MAXIMUM RATINGS -55oC to +200oC -65oC to +200oC 25oC/W max. See Note 3 250oC/W max.
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1N4151-1
DO-35
-55oC
200oC
-65oC
25oC/W
250oC/W
500mW
150oC
1N4151-1
DO35 package
40044
Switching diode 50V 200mA
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502-0 vitrohm
Abstract: NiCr6015 RWN 5020 R003 R018 R050 0R003 RWC 5020 502-0 vitrohm resistor rwc5020
Text: Series RWN / RWC SMD Power Resistors Specifications Type RWN 5020 RWC 5020 Styles 5020 Dimensions mm Power ratingϑo = 200oC Single pulse I max. Ei, max Timp, max periodic pulse load imax non inductive, no winding wirewound on ceramic W P 25 2,2 P 40 2,0 P 70 1,6
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200oC
0R003
0R050
0R051
0R003,
0R005,
502-0 vitrohm
NiCr6015
RWN 5020
R003
R018
R050
0R003
RWC 5020
502-0 vitrohm resistor
rwc5020
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SEMISOUTH
Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC
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-55oC
200oC
260oC*
MIL-PRF-19500
O-257)
O-257
SEMISOUTH
1200v 30A to247
JFETs SiC
jfets
downhole
ASJD1200R045
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TO-200AE weight
Abstract: me 6100 ms 6100
Text: AEGIS SEMICONDUTORES LTDA. A5A:6100.XX VOLTAGE RATINGS Part Number VRRM , VR – V rep. peak reverse voltage Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage TJ = 0 to 200OC TJ = -40 to 0OC TJ = 25 to 200OC A5A:6100.02 200 200 300 A5A:6100.04 400
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200OC
O-200AE
TO-200AE weight
me 6100
ms 6100
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NiCr6015
Abstract: 502-0 vitrohm RWN 5020 RWC 5020 502-0 vitrohm resistor RWN5020 Yageo part marking Yageo smd resistor 10k 220R R003
Text: VITROHM Series RWN / RWC SMD Power Resistors Specifications Type RWN 5020 RWC 5020 Styles 5020 Dimensions mm Power ratingϑo = 200oC Single pulse I max. Ei, max Timp, max periodic pulse load imax non inductive, no winding wirewound on ceramic W P 25 2,2 P 40 2,0
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200oC
0R002
0R050
0R003,
0R005,
NiCr6015
502-0 vitrohm
RWN 5020
RWC 5020
502-0 vitrohm resistor
RWN5020
Yageo part marking
Yageo smd resistor 10k
220R
R003
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502-0 vitrohm
Abstract: RWC 5020 rwp5020 RWN 5020 din 44050 CECC 00802 502-0 vitrohm resistor resistor smd 103 rwc5020 220R
Text: Series RWN / RWC SMD Power Resistors Specifications Type RWN 5020 Styles RWC 5020 5020 Dimensions mm Power ratingϑo = 200oC Single pulse I max. Ei, max Timp, max periodic pulse load imax non inductive, no winding W wirewound on ceramic P 25 2,2 P 40 2,0 P 70 1,6
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200oC
0R002
0R002,
0R003,
0R005,
502-0 vitrohm
RWC 5020
rwp5020
RWN 5020
din 44050
CECC 00802
502-0 vitrohm resistor
resistor smd 103
rwc5020
220R
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Untitled
Abstract: No abstract text available
Text: Data Sheet 150mA RF ULDO REGULATOR AP2202 General Description Features The AP2202 is a 150mA ULDO regulator which provides very low noise, ultra low dropout voltage typically 165mV at 150mA , very low standby current (1µA maximum) and excellent power supply ripple
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150mA
AP2202
AP2202
165mV
150mA)
100Hz)
150mA
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1N6510
Abstract: MX1N6510
Text: 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as
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1N6510
16-PIN
1N6510
MX1N6510
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2 watt rf transistor
Abstract: 10 watt power transistor 100 watt transistor transistor Common Base amplifier RF TRANSISTOR 10 WATT common base transistor
Text: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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1N6509
Abstract: No abstract text available
Text: 1N6509 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering
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1N6509
14-PIN
1N6509
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Untitled
Abstract: No abstract text available
Text: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.
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SFT5094-4
200oC
SFT5015.
100oC
100mA;
10MHz
100mA
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Untitled
Abstract: No abstract text available
Text: SPK1645 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 16 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * Ideal for solar panel PV application such as By-Pass diode
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SPK1645
MIL-STD-202E
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UMIL80
Abstract: No abstract text available
Text: UMIL 80 80 Watts, 28 Volts, Class AB Defcom 200 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL80 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 200-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused
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UMIL80
150oC
200oC
UMIL80
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HE04-150
Abstract: No abstract text available
Text: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 naTpoHbi a h a ranoreHHbix naMn TMna G4 TMnnaMnbi PaCTp MOHTaWHbIX OTBepCTMM Hanpa^eHMe MaKC. TeM nepaiypa :G4 :11,4 MM :120 VAC :200oC f lr m n a M n c p a c ip o M : 4 mm MaKC. MO^HOCTb : 100 B t
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120VAC
100Bt
HE04-150
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of ha 741 ic
Abstract: ha4640 HA-4640-1
Text: 3 HA-4640-1 HARRIS High Temperature Quad Operational Amplifier Preliminary DESCRIPTION • C H A R A C T E R I Z E D T O 3 00 ° C • T E S T E D A T 200OC • L O W IN P U T O F F S E T V O L T A G E The H A - 4 6 4 0 - 1 contains fo ur general purpose operational
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HA-4640-1
200OC
200OC
10kfi
10VSTEP.
50mV/DIV.
100ns/DIV.
of ha 741 ic
ha4640
HA-4640-1
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 77 Ï>Ë| 4305271 OOCHIBI 0 H 3 3 C 0 9 1 3 1 o T- 7 3 - 6 S ' HA-2420-1 H A R R I S High Temperature Sample and Hold Amplifier FEATURES <ta=200oc T he HA -2420-1 is a monolithic sample-and-hold am plifier guaran teed to operate over the - 5 5 °C to + 200°C temperature range. The
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HA-2420-1
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