MIXA30W1200TMH
Abstract: E72873
Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA30W1200TMH
20091214a
MIXA30W1200TMH
E72873
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mosfet transistor 0.35 um
Abstract: No abstract text available
Text: VHM 40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 Preliminary data L4 L6 K 12 L9 P 18 R 18 NTC F 10 X 15 K 10 K 13 T 18 V 18
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40-06P1
B25/50
20091214a
mosfet transistor 0.35 um
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Untitled
Abstract: No abstract text available
Text: VHM 40-06P1 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 Preliminary data K 12 L9 P 18 R 18 NTC F 10 X 15 K 10 K 13 T 18 V 18
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Original
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PDF
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40-06P1
B25/50
20091214a
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MIXA10W1200TMH
Abstract: E72873
Text: MIXA10W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 17 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA10W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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Original
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PDF
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MIXA10W1200TMH
20091214a
MIXA10W1200TMH
E72873
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