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    200909

    Abstract: smd diode g6 smd g1
    Text: GWM 120-0075X1 Three phase full Bridge VDSS = 75 V =1 10 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol


    Original     		120-0075X1 20090930c 200909 smd diode g6 smd g1 PDF