DPG20C300PB
Abstract: DPG20C300PN
Text: DPG 20 C 300 PB V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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t 3866 power transistor
Abstract: t 3866 t 3866 transistor DPG10I200PA DPG10I200PM
Text: DPG 10 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number DPG 10 I 200 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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03866
Abstract: 07062
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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DPG10I200PA
Abstract: No abstract text available
Text: DPG 10 I 200 PM V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 1 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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dpg20c300
Abstract: DPG20C300PN DPG20C300PB t 3866 power transistor t 3866
Text: DPG 20 C 300 PB V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 300 PB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG20C300PN
Abstract: DPG20C300PB dpg20c300 IXYS DPG20C300PN datasheet IXYS DPG20C300PN DIODE PN junction diode
Text: DPG 20 C 300 PN V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 300 PN Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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dpg20c300
IXYS DPG20C300PN datasheet
IXYS DPG20C300PN
DIODE PN junction diode
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20c200
Abstract: DPG20C200PN DPG20C200PB
Text: DPG 20 C 200 PN V RRM = 200 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 200 PN Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DPG10I200PA
Abstract: No abstract text available
Text: DPG 10 I 200 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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Untitled
Abstract: No abstract text available
Text: DPG 10 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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DPG20C200PN
Abstract: DPG20C200PB DPG20C t 3866 power transistor 20C200 0630C
Text: DPG 20 C 200 PB V RRM = 200 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 20 C 200 PB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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t 3866 power transistor
Abstract: t 3866 DPG10I300PA anode common fast recovery diode TO-220
Text: DPG 10 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG10I200PM
Abstract: DPG10I200PA a85a
Text: DPG 10 I 200 PM V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 200 V 10 A 35 ns Part number DPG 10 I 200 PM 3 1 Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG10I300PA
Abstract: dpak DIODE ANODE COMMON
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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pn junction diode
Abstract: DPG20C300PB DPG20C300PN
Text: DPG 20 C 300 PN V RRM = 300 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips
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DPG20C200PB
Abstract: DPG20C200PN
Text: DPG 20 C 200 PB V RRM = 200 V I FAV = 2x 10 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DPG10I300PA
Abstract: diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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