MICROWAVE ASSOCIATES ISOLATOR
Abstract: AS218 transistor
Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and
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CAT501-09A
MICROWAVE ASSOCIATES ISOLATOR
AS218 transistor
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HMC835LP6GE
Abstract: HMC835 EKIT01-HMC835LP6G HMC1060LP3 PCB design for csp package
Text: HMC835LP6GE v02.0313 FRACTIONAL-N PLL WITH INTEGRATED VCO 33 - 4100 MHz PLLs WITH INTEGRATED VCO - SMT Features 1 Wideband: 33 - 4100 MHz External LO Input: Maximum Phase Detector Rate: 100 MHz Exact Frequency Mode: 0 Hz Fractional Frequency Error Low Phase Noise: -110 dBc/Hz in Band Typical
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HMC835LP6GE
11705611d
B29D0Bh
HMC835LP6GE
HMC835
EKIT01-HMC835LP6G
HMC1060LP3
PCB design for csp package
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SMS7621-096
Abstract: 0201 footprint S1705 SMS7621
Text: DATA SHEET SMS7621-096: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode NOTE: A product change notice for bond pad dimensions is pending on this part. Applications • Sensitive detector circuits Sampling circuits Mixer circuits Features Low barrier height
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SMS7621-096:
J-STD-020
SMS7621-096
200844G
0201 footprint
S1705
SMS7621
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Untitled
Abstract: No abstract text available
Text: Preliminary DATA SHEET SMS7621-096: 0201 Surface Mount Low Barrier Silicon Schottky Diode Applications S ensitive detector circuits l S ampling circuits l M ixer circuits l Features l l l l l L ow profile, ultraminiature 0201 surface mount package
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SMS7621-096:
SMS7621-096
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Untitled
Abstract: No abstract text available
Text: HMC1190LP6GE v06.1113 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
HMC384LP4E
HMC384LP4E
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H1190
Abstract: No abstract text available
Text: HMC1190LP6GE v05.0913 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
HMC384LP4E
HMC384LP4E
H1190
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Untitled
Abstract: No abstract text available
Text: HMC1190LP6GE v03.0513 BROADBAND HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ Fractional-N PLL & VCO, 0.7 - 3.5 GHz Typical Applications Features The HMC1190LP6GE is Ideal for: Broadband Operation with no external matching High-side and Low-side LO injection Operation
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HMC1190LP6GE
HMC1190LP6GE
HMC384LP4E
HMC384LP4E
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Untitled
Abstract: No abstract text available
Text: HMC1197LP7FE v03.0314 TRANSCEIVERS - Rx RFICs Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO, 100 - 4000 MHz Typical Applications Features The HMC1197LP7FE is Ideal for: Very Low Noise Floor, -159.5 dBm/Hz • Multiband/Multi-standard Cellular BTS Diversity
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HMC1197LP7FE
HMC1197LP7FE
HMC384LP4E
HMC384LP4E
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0201 footprint
Abstract: sms7621 SMS7621-096 S1705
Text: DATA SHEET SMS7621-096: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode NOTE: A product change notice for bond pad dimensions is pending on this part. Applications x Sensitive detector circuits x Sampling circuits x Mixer circuits Features x Low barrier height
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SMS7621-096:
J-STD-020
SMS7621-096
200844F
0201 footprint
sms7621
S1705
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Untitled
Abstract: No abstract text available
Text: HMC1197LP7FE v02.0513 TRANSCEIVERS - Rx RFICs Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO, 100 - 4000 MHz Typical Applications Features The HMC1197LP7FE is Ideal for: Very Low Noise Floor, -160 dBm/Hz • Multiband/Multi-standard Cellular BTS Diversity
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HMC1197LP7FE
HMC1197LP7FE
HMC384LP4E
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Untitled
Abstract: No abstract text available
Text: HMC1197LP7FE v02.0613 TRANSCEIVERS - Rx RFICs Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO, 100 - 4000 MHz Typical Applications Features The HMC1197LP7FE is Ideal for: Very Low Noise Floor, -160 dBm/Hz • Multiband/Multi-standard Cellular BTS Diversity
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HMC1197LP7FE
HMC1197LP7FE
HMC384LP4E
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PIN diode SPICE model skyworks
Abstract: No abstract text available
Text: DATA SHEET SMS7621-096: 0201 Surface Mount Low Barrier Silicon Schottky Diode Applications S ensitive detector circuits l S ampling circuits l M ixer circuits l Features l l l l l L ow profile, ultraminiature 0201 surface mount package L ow barrier height
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SMS7621-096:
SMS7621-096
PIN diode SPICE model skyworks
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F48AD
Abstract: No abstract text available
Text: HMC835LP6GE v01.1212 FRACTIONAL-N PLL WITH INTEGRATED VCO 33 - 4100 MHz PLLs WITH INTEGRATED VCO - SMT Features 1 Wideband: 33 - 4100 MHz External LO Input: Maximum Phase Detector Rate: 100 MHz Exact Frequency Mode: 0 Hz Fractional Frequency Error Low Phase Noise: -110 dBc/Hz in Band Typical
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HMC835LP6GE
F48AD
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Untitled
Abstract: No abstract text available
Text: HMC1197LP7FE v01.0413 TRANSCEIVERS - Rx RFICs Wideband Direct Quadrature Modulator w/ Fractional-N PLL & VCO, 100 - 4000 MHz Typical Applications Features The HMC1197LP7FE is Ideal for: Very Low Noise Floor, -160 dBm/Hz • Multiband/Multi-standard Cellular BTS Diversity
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HMC1197LP7FE
HMC1197LP7FE
HMC384LP4E
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HMC835
Abstract: HMC835LP6GE HMC1031
Text: HMC835LP6GE v03.0413 FRACTIONAL-N PLL WITH INTEGRATED VCO 33 - 4100 MHz PLLs WITH INTEGRATED VCO - SMT Features 1 Wideband: 33 - 4100 MHz External LO Input: Maximum Phase Detector Rate: 100 MHz Exact Frequency Mode: 0 Hz Fractional Frequency Error Low Phase Noise: -110 dBc/Hz in Band Typical
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HMC835LP6GE
11705611d
B29D0Bh
HMC835
HMC835LP6GE
HMC1031
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Untitled
Abstract: No abstract text available
Text: SCAN921821 SCAN921821 Dual 18-Bit Serializer with Pre-emphasis, IEEE 1149.1 JTAG , and At-Speed BIST Literature Number: SNLS173B SCAN921821 Dual 18-Bit Serializer with Pre-emphasis, IEEE 1149.1 (JTAG), and At-Speed BIST General Description Features The SCAN921821 is a dual channel 18-bit serializer featuring signal conditioning, boundary SCAN, and at-speed BIST.
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SCAN921821
SCAN921821
18-Bit
SNLS173B
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Untitled
Abstract: No abstract text available
Text: Preliminary DATA SHEET SMS7621-096: 0201 Surface Mount Low Barrier Silicon Schottky Diode Applications S ensitive detector circuits l S ampling circuits l M ixer circuits l Features l l l l l L ow profile, ultraminiature 0201 surface mount package
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SMS7621-096:
SMS7621-096
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Untitled
Abstract: No abstract text available
Text: HMC835LP6GE v01.1212 FRACTIONAL-N PLL WITH INTEGRATED VCO 33 - 4100 MHz PLLs WITH INTEGRATED VCO - SMT Features 1 Wideband: 33 - 4100 MHz External LO Input: Maximum Phase Detector Rate: 100 MHz Exact Frequency Mode: 0 Hz Fractional Frequency Error Low Phase Noise: -110 dBc/Hz in Band Typical
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HMC835LP6GE
B29D0Bh
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Untitled
Abstract: No abstract text available
Text: HMC835LP6GE v04.1113 FRACTIONAL-N PLL WITH INTEGRATED VCO 33 - 4100 MHz PLLs WITH INTEGRATED VCO - SMT Features 1 Wideband: 33 - 4100 MHz External LO Input Maximum Phase Detector Rate: 100 MHz Exact Frequency Mode: 0 Hz Fractional Frequency Error Low Phase Noise: -110 dBc/Hz in Band @2GHz
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HMC835LP6GE
11705611d
B29D0Bh
Reg06h
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bauelemente DDR
Abstract: SPF 455 Teltow Mechanische Filter VEB Kombinat zf filter rft katalog SPF 10700 49004 SPF455 490.2159 Kombinat VEB Elektronische Bauelemente
Text: Passive elektronische Bauelemente O Widerstände Q Kondensatoren 0 Kinlaklfcaüelemenle 2 Suidererzeognisse Passive elektronische Bauelemente Auf allen G ebieten der Elektronik und Elektrotechnik werden an Leistungsfähigkeit, Lebensdauer und Zu verlässigkeit elektronischer Bauelemente ständig
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: PLCC IC120 Series CHARACTERISTICS Insulation Resistance W ithstanding Voltage Contact Resistance Current Rating Operating Temperature l.OOOMQ min, at 500V DC 700V AC RMS for 1 minute 30m£2 max. at 10mA 1A per Contact -40 C ~ * 170 0 MATERIAL and FINISH Housing
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IC120
IC120-068
Num007
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Halbleiterbauelemente DDR
Abstract: aktive elektronische bauelemente ddr SMY50 smy 51 Transistoren DDR information applikation elektronik DDR SMY52 ddr veb aktive elektronische
Text: eiecrronic M O S - Feldeffekttransistoren APPLIKATIONSBEISPIELE Änderungen, die den technischen Fortschritt dokumentieren, sind Vorbehalten. Kür die aufgefiihrten Schaltungen wird keine Gewähr bezüglich Patentfreiheit übernommen. Nachdruck, auch auszugsweise, Ist
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DDR-501
Halbleiterbauelemente DDR
aktive elektronische bauelemente ddr
SMY50
smy 51
Transistoren DDR
information applikation
elektronik DDR
SMY52
ddr veb
aktive elektronische
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ltun
Abstract: Schaltungen TNF-G Scans-048 414244-1 4143.4.-2111.00 4143,4, DSAGER00027
Text: Keramische Halbleiterwiderstände A u sgabe 1983 A b b ild u n g e n und W e rte g e lte n n u r b e d in g t als U n te rla g e n fü r Bestellungen. R echtsverbindlich ist je w e ils d ie A u ftra g s b e s tä tig u n g . Ä n d e run g e n Vorbehalten
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4-414h.
4-413S
ltun
Schaltungen
TNF-G
Scans-048
414244-1
4143.4.-2111.00
4143,4,
DSAGER00027
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ITT transistoren
Abstract: kme-3 baustein nf schaltungen kme-3 baustein ES II 21-12111 sy170 selen-gleichrichter SF136 oszillograf frankfurt widerstandsnetz
Text: li,li l | W r j »< ' w r -y, Inhaltsverzeichnis Nr. des Artikels / Titel Seite 1 Netzteil für NF-Leistungsverstärker 4 2 Ladegerät für Kfz.-Batterien 6/12 Volt 6 3 Akku-Universal-Ladegerät 8 4 Kaskadenschaltung mit Selengleichrichtern 10 5 Niederspannungsnetzgerät ohne Transformator
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