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    2000V MOSFET Search Results

    2000V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2000V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・ESD Protected 2000V. A ・High density cell design for low RDS ON . ・Voltage controlled small signal switch. ・Rugged and reliable.


    Original     		PDF 2N7000K 100ms

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		PDF 2N7000K 100ms

    2N7000

    Abstract: 2n7000k
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		PDF 2N7000K 100ms 2N7000 2n7000k

    2N7002K

    Abstract: 2N7002k wc
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.


    Original     		PDF 2N7002K 100ms 100mm2 2N7002K 2N7002k wc

    2N7002K

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A 3 G ・Rugged and reliable.


    Original     		PDF 2N7002K 10/-0ate 500mA 200mA 190mA, 2N7002K

    2N7002KA

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A G ・Rugged and reliable.


    Original     		PDF 2N7002KA 2N7002KA

    2N7002K

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.


    Original     		PDF 2N7002K 100ms 100mm2 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E B L ・ESD Protected 2000V. L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 H A 3 G ・Rugged and reliable.


    Original     		PDF 2N7002KA 30/-A

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E B L ・ESD Protected 2000V. L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 H A 3 G ・Rugged and reliable.


    Original     		PDF 2N7002KA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KDU TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B B1 ・ESD Protected 2000V. ・High density cell design for low RDS ON . 1 6 2 5 3 4 DIM A A1 B A C ・Rugged and reliable. A1 C ・Voltage controlled small signal switch.


    Original     		PDF 2N7002KDU

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 2 1/4


    Original     		PDF 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 1 1/3


    Original     		PDF 2N7002KA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 1 1/4


    Original     		PDF 2N7000K

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KE TECHNICAL DATA N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. Human Body Model ・High density cell design for low RDS(ON). ・Voltage controlled small signal switch. ・High-speed line driver.


    Original     		PDF 2N7002KE 300mA 300mA,

    Untitled

    Abstract: No abstract text available
    Text: 2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 2000V HBM     Low On-Resistance: RDS(on) < 3 @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device


    Original     		PDF 2N7002B OT-23 11-JAN-13 KSD-T5C100-001

    SRK7002LT1G

    Abstract: Vdss 2000V
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET SRK7002LT1G Silicon N-Channel 3 zFeatures 1 1 Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 7) ESD Protected:2000V


    Original     		PDF SRK7002LT1G OT-23 O-236AB) SRK7002LT3G SRK7002LT1G Vdss 2000V

    T1N200

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		PDF IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200

    MOSFET

    Abstract: 2N7002KU
    Text: SEMICONDUCTOR 2N7002KU TECHNICAL DATA N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES E ・ESD Protected 2000V. Human Body Model M B M ・High density cell design for low RDS(ON). D 3 1 L C G A J 2 ・Voltage controlled small signal switch.


    Original     		PDF 2N7002KU MOSFET 2N7002KU

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET SRK7002LT1G Silicon N-Channel 3 zFeatures 1 1 Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 7) ESD Protected:2000V


    Original     		PDF SRK7002LT1G OT-23 O-236AB) SRK7002LT3G

    Untitled

    Abstract: No abstract text available
    Text: 2N7000K SEMICONDUCTOR N Channel MOSFET ESD Protected 2000V TECHNICAL DATA INTERFACE AM SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low R ds on)• Voltage controlled small signal switch. • Rugged and reliable.


    OCR Scan     		PDF 2N7000K

    FK20KM6

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE FK20KM-6 • v d s s •300V . • rDS ON (MAX) ■0.33Q • I d . ■■■ 20A • V iso. 2000V


    OCR Scan     		PDF FK20KM-6 150ns FK20KM6

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS16KM-6 HIGH-SPEED SWITCHING USE FS16KM-6 ' V d s s . . 300V ' rDS ON (MAX) . 0.33Í2 I d . .16A Viso. 2000V ' APPLICATION SMPS, DC-DC C onverter, b attery charger, power


    OCR Scan     		PDF FS16KM-6

    FS20KM-5

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 . •250V • TDS ON (MAX) 0 .1 9 0 ! » I d . 20A 2000V ! »V j dss ¡ • Viso. APPLICATION SMPS, DC-DC Converter, battery charger, power


    OCR Scan     		PDF FS20KM-5 FS20KM-5

    B1037

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5KM-6 HIGH-SPEED SWITCHING USE FS5KM-6 ' V d s s . . 3 0 0 V ' rDS ON (MAX) . . 1 . 6 0 . I d . .5 A ' V is o . 2000V APPLICATION SMPS, DC-DC C onverter, b attery charger, power


    OCR Scan     		PDF O-220FN B1037