Untitled
Abstract: No abstract text available
Text: Ordering number : EN8994B FW217A N-Channel Power MOSFET http://onsemi.com 35V, 6A, 39mΩ, Dual SOIC8 Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
EN8994B
FW217A
2000mm2Ã
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN8998C FW344A Power MOSFET http://onsemi.com 30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8 Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive Halogen free compliance
|
Original
|
PDF
|
EN8998C
FW344A
|
A1598
Abstract: FW274 W274
Text: FW274 Ordering number : ENA1598 SANYO Semiconductors DATA SHEET FW274 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
FW274
ENA1598
PW10s)
2000mm2
PW10s
A1598-4/4
A1598
FW274
W274
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0273B FW4604 Power MOSFET 30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8 http://onsemi.com Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in • • • Nch : RDS on 1=30mΩ(typ.)
|
Original
|
PDF
|
ENA0273B
FW4604
A0273-7/7
|
IAV2A
Abstract: No abstract text available
Text: Ordering number : ENA2066A FW389 Power MOSFET 100V, 2A, 225mΩ, –100V, –2A, 300mΩ, Complementary Dual SOIC8 http://onsemi.com Features • Input Capacitance Nch : Ciss=490pF typ. • ON-resistance Nch : RDS(on)1=165mW(typ.) Pch : RDS(on)1=230mW(typ.)
|
Original
|
PDF
|
ENA2066A
FW389
490pF
165mW
230mW
1000pF
100ms)
A2066-8/8
IAV2A
|
PA1758
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.
|
Original
|
PDF
|
PA1758
PA1758
|
Untitled
Abstract: No abstract text available
Text: FW4604 Ordering number : ENA0273 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW4604 General-Purpose Switching Device Applications Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in
|
Original
|
PDF
|
ENA0273
FW4604
PW10s)
2000mm2
PW10s
A0273-6/6
|
70720
Abstract: ENA0176
Text: FW216A Ordering number : ENA0176 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW216A General-Purpose Switching Device Applications Features ON-resistance Nch : RDS on 1=49mΩ (typ.) 4.0V drive Halogen free compliance • • • Specifications
|
Original
|
PDF
|
ENA0176
FW216A
PW10s)
2000mm2
PW10s
A0176-4/4
70720
ENA0176
|
Untitled
Abstract: No abstract text available
Text: FW813 Ordering number : ENA1884 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW813 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=39mΩ (typ.) 4V drive Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
ENA1884
FW813
PW10s,
2000mm2
PW10s
A1884-4/4
|
Untitled
Abstract: No abstract text available
Text: LTC3250-1.5/LTC3250-1.2 High Efficiency, Low Noise, Inductorless Step-Down DC/DC Converter FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 2.7V to 5.5V Input Voltage Range No Inductors Li-Ion 3.6V to 1.5V with 81% Efficiency Low Noise Constant Frequency Operation
|
Original
|
PDF
|
LTC3250-1
5/LTC3250-1
250mA
OT-23
LTC3412
TSSOP16E
LTC3440
600mA
LTC3441
|
PA1760
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management 8 5 application of notebook computers.
|
Original
|
PDF
|
PA1760
PA1760
|
FW250
Abstract: W250 75482
Text: Ordering number : ENN7548 FW250 N-Channl Silicon MOSFET FW250 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switcing. 4V drive. unit : mm 2129 [FW250] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 Specifications
|
Original
|
PDF
|
ENN7548
FW250
FW250]
PW10s)
FW250
W250
75482
|
A1202
Abstract: MCH6440
Text: MCH6440 注文コード No. N A 1 2 0 2 A 三洋半導体データシート 半導体データシート No.N1202 をさしかえてください。 MCH6440 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス
|
Original
|
PDF
|
MCH6440
N1202
2000mm2
300mA
300mA,
150mA,
IT13426
600mA
A1202
MCH6440
|
Untitled
Abstract: No abstract text available
Text: FW282 Ordering number : ENA1549 SANYO Semiconductors DATA SHEET FW282 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
FW282
ENA1549
2000mm2Ã
A1549-4/4
|
|
|
mpf110
Abstract: FW359
Text: 注文コード No. N 7 5 4 9 FW359 三洋半導体データシート N FW359 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗超高速スイッチング , 4V 駆動の N チャネルおよび P チャネル MOS 形電界効果トランジスタを
|
Original
|
PDF
|
FW359
100ms
2000mm2
--14A
--30V
IT06063
IT06064
mpf110
FW359
|
PA1755
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power 8 5 1 ; Source 1 2 ; Gate 1
|
Original
|
PDF
|
PA1755
PA1755
|
fw341
Abstract: D2004 W341
Text: FW341 Ordering number : ENN7922 N-Channel and P-Channel Silicon MOSFETs FW341 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
|
Original
|
PDF
|
FW341
ENN7922
PW10s)
fw341
D2004
W341
|
W359
Abstract: FW359 75493
Text: Ordering number : ENN7549 FW359 N-Channel and P-Channel Silicon MOSFETs FW359 Ultrahigh-Speed Switching Applications Features The FW359 in corporates a N-channel MOSFET unit : mm and a P-channel MOSFET that feature 2129 low ON-resistance, ultrahigh-speed switching,
|
Original
|
PDF
|
ENN7549
FW359
FW359
FW359]
W359
75493
|
FSS218
Abstract: S218 INVERTER motor drive SANYO
Text: FSS218 Ordering number : ENA0189A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS218 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
|
Original
|
PDF
|
FSS218
ENA0189A
PW10s)
2000mm2
PW10s
A0189-4/4
FSS218
S218
INVERTER motor drive SANYO
|
W906
Abstract: FW906
Text: FW906 Ordering number : ENA1809 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW906 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET
|
Original
|
PDF
|
FW906
ENA1809
PW100ms)
PW10s)
A1809-6/6
W906
FW906
|
Untitled
Abstract: No abstract text available
Text: FW216A Ordering number : ENA0176B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW216A General-Purpose Switching Device Applications Features ON-resistance Nch : RDS on 1=49mΩ (typ.) 4.0V drive Halogen free compliance • • • Specifications
|
Original
|
PDF
|
FW216A
ENA0176B
2000mm2Ã
A0176-7/7
|
Untitled
Abstract: No abstract text available
Text: ML2002 Preliminary ML2002 Series Static/Half Duty LCD COG Driver 1 Application 2 2 2 2 2 1 Features 3 General Purpose Clock 3 High quality instrument Telephone, mobile phone 3 Automotive Handheld Device like PDA, MP3, or 3 3 PMP 3 3 3 3 3 3 3 3 A Gold Bump Chip which can reduce pin count and area.
|
Original
|
PDF
|
ML2002
2000mm2
P13/13
|
Untitled
Abstract: No abstract text available
Text: FW344A Ordering number : EN8998C SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive
|
Original
|
PDF
|
FW344A
EN8998C
|
w241
Abstract: No abstract text available
Text: Ordering number : ENN6939 N-Channel Silicon MOSFET FW241 'SAMYO, Ultrahigh-Speed Swiching Applications Features Package Dimensions • T his c o m p o s ite device allow s high density m o u n tin g by unit : m m in corpo rating tw o M O S F E T chips in one p ackag e that
|
OCR Scan
|
PDF
|
ENN6939
FW241
FW241]
w241
|
