hy5rs123235b
Abstract: HY5RS123235BFP HY5RS123235
Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235BFP
512Mbit
16Mx32)
HY5RS123235BFP
hy5rs123235b
HY5RS123235
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C101
Abstract: SN65LVCP22 SN65LVCP23 SN65LVCP23D SN65LVCP23PW SN65LVDS101 redundant transmission LVCP23
Text: SN65LVCP23 www.ti.com SLLS554 – NOVEMBER 2002 2x2 2000 Mbps LVPECL CROSSPOINT SWITCH Crosspoint Switch D LVDS Crosspoint Switch Available in SN65LVCP22 D Low-Jitter 2000-Mbps Fully Differential Data Path D 20 ps Typ , 40 ps (Max), of Peak-to-Peak Jitter With PRBS = 223–1 Pattern at 2000 Mbps
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SN65LVCP23
SLLS554
SN65LVCP22
2000-Mbps
C101
SN65LVCP22
SN65LVCP23
SN65LVCP23D
SN65LVCP23PW
SN65LVDS101
redundant transmission
LVCP23
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HY5RS573225AFP-14
Abstract: 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
HY5RS573225AFP-14
11mmx14mm
HY5RS573225AFP-16
136ball
HY5RS573225AFP
HY5RS573225AFP-12
hynix gddr3
hy5rs573225afp-11
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136ball
Abstract: HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
136ball
HY5RS573225AFP2
HY5RS573225AFP
samsung k9 derating
HY5RS573225AFP-11
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K4W1G1646E
Abstract: K4W1G1646E-HC11
Text: Rev. 1.3, Mar. 2011 K4W1G1646E 1Gb E-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W1G1646E
K4W1G1646E
K4W1G1646E-HC11
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K4W1G1646D-EC15
Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
Text: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
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K4W1G1646D
K4W1G1646D-EC15
K4W1G1646D-EJ11
K4W1G1646D-EC
gDDR3-1800
DDR3 DIMM 240 pinout
GDDR3 SDRAM 256Mb
JESD51-2
VIH150
SAMSUNG GDDR3
K4W1G1646D
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ELPIDA DDR User
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
HY5RS573225AFP
500/600MHz
3XOOHG/RZWR9664
ELPIDA DDR User
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HY5RS573225B
Abstract: BA1 K11
Text: HY5RS573225BFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225BFP
8Mx32)
HY5RS573225BFP
550MHz
500MHz
HY5RS573225B
BA1 K11
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hynix gddr3
Abstract: 136ball HY5RS573225AFP HY5RS573225AFP2 HY5RS573225AFP-14 AP 4750 HY5RS573225A
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
HY5RS573225
hynix gddr3
136ball
HY5RS573225AFP
HY5RS573225AFP2
HY5RS573225AFP-14
AP 4750
HY5RS573225A
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K4W1G1646E-HC12
Abstract: K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000
Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
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K4W1G1646E
K4W1G1646E-HC12
K4W1G1646E
samsung K4W1G1646E-HC11
K4W1G1646E-HC11
gddr3
1066MB
gDDR3-1333
K4W1G1646E-HC1A
DDR3 DIMM 240 pinout
gDDR3-2000
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Untitled
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
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Untitled
Abstract: No abstract text available
Text: Memory Product Specification DK.04GAM.F9SK2 4GB 2GB 256M x 64Bit x 2pcs Kit DDR3-2000MHz CL9 Overclocking Unbuffered DIMM Description: The overclocking unbuffered Module is a kit of two 256M x 64bit of 2GB DDR3-2000MHz CL9-9-9-27 at 1.65v Memory Module. The Module base on sixteen 128M x 8-bit DDR3 FBGA SDRAM compoments.
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04GAM
64Bit
DDR3-2000MHz
DDR3-2000MHz
CL9-9-9-27
DDR3-1333MHz
CL9-9-9-24
240-pin
1333Mbps
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MAX9979
Abstract: max9957 APP4338 RG58C
Text: Maxim > App Notes > Automatic Test Equipment ATE Keywords: cable loss, skin effect, dielectric loss, automated test equipment, ATE, electronic compensation, equalizing, pin electronics, bandwidth reduction, cable droop, overshoot voltage, comparator, semi rigid,
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RG58C,
RG174,
1000Mbps,
2000Mbps
com/an4338
MAX9979:
AN4338,
APP4338,
Appnote4338,
MAX9979
max9957
APP4338
RG58C
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RTL8168
Abstract: Realtek RTL8169 RTL8169 RF1119 RTL8169 BootROM RTL8169 reference design realtek rtl8169 programming realtek rtl8139 programming rtl8169 reference RTL8139 reference design
Text: RTL8169 REALTEK GIGABIT ETHERNET MEDIA ACCESS CONTROLLER WITH POWER MANAGEMENT RTL8169 8.2.1 Target Read. 37 8.2.2 Target Write. 38 8.2.3 Master Read. 38
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RTL8169
28x28
530-ASS-P004
RTL8168
Realtek RTL8169
RTL8169
RF1119
RTL8169 BootROM
RTL8169 reference design
realtek rtl8169 programming
realtek rtl8139 programming
rtl8169 reference
RTL8139 reference design
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Untitled
Abstract: No abstract text available
Text: H5RS5223CFR 512Mbit 16Mx32 GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5RS5223CFR
512Mbit
16Mx32)
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H5RS5223CFR-11C
Abstract: H5RS5223CFR BA2-H10 ba2h3 H5RS5223CFR11C
Text: H5RS5223CFR 512Mbit 16Mx32 GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5RS5223CFR
512Mbit
16Mx32)
H5RS5223CFR
H5RS5223CFR-11C
BA2-H10
ba2h3
H5RS5223CFR11C
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hy5rs123235b
Abstract: hy5rs123235bfp-14 HY5RS123235 HY5RS123235BFP-1
Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235BFP
512Mbit
16Mx32)
HY5RS123235BFP
140ps
130ps
70Kns
hy5rs123235b
hy5rs123235bfp-14
HY5RS123235
HY5RS123235BFP-1
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K4W1G1646E
Abstract: samsung K4W1G1646E-HC11
Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
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K4W1G1646E
K4W1G1646E
samsung K4W1G1646E-HC11
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K4W1G1646D-EC15
Abstract: K4W1G1646D
Text: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.
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K4W1G1646D
K4W1G1646D-EC15
K4W1G1646D
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BCM5312
Abstract: bcm5288 IEEE802 LinoWave Solutions linowave bcm5312bcm5288b5011 b5011 IEEE 802.3u 100Base 34-Specifications
Text: Datasheet LW 244-G switch LinoWave Solutions G-02 Ground Floor, Lulu Bldg. Dubai Internet City P.O. Box 282341 Dubai, UAE www.linowave.com 1/4 Product Review Switches are small hardware network device with multiple ports in one network whose task is to copy frames from one port to another
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244-G
24-port
IEEE802
10Base-T
100Base-TX
1000Base-T
BCM5312
BCM5288
LinoWave Solutions
linowave
bcm5312bcm5288b5011
b5011
IEEE 802.3u 100Base
34-Specifications
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