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    200 MIL BEO TRANSISTOR Search Results

    200 MIL BEO TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    200 MIL BEO TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT-64020

    Abstract: AT64020 AT-64023
    Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk


    Original     		PDF AT-64020 AT-64023 AT-64020 AT64020 AT-64023

    MRF328

    Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
    Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and


    Original     		PDF AN790/D AN790 MRF328 MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454

    at6400

    Abstract: AT-64000-GP4 AT-64000
    Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and


    Original     		PDF AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN AV02-1929EN at6400 AT-64000-GP4

    at 64000

    Abstract: at64000 S21E at-64000
    Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over


    Original     		PDF AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E

    sm 4109

    Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
    Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 AT-64020 AT-64023 AT-31625 sm 4109 .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063

    Bipolar Transistors Selection Guide

    Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
    Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 AT-30533 AT-31011 AT-31033 AT-32011 AT-32032 AT-32033 AT-32063 AT-41410 AT-41411 Bipolar Transistors Selection Guide transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136

    AT64020

    Abstract: AT-64020 S21E
    Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 AT64020 S21E

    Silicon Bipolar Transistor 35 MICRO-X

    Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X
    Text: BIPOLARICS, INC. Part Number B30V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 27.0 dBm, P1dB @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B30V140 is a high performance, low cost silicon bipolar


    Original     		PDF B30V140 B30V140 B30V180 B30V1160 Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X

    AT-64020

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 AT-64020 5965-8915E S21E

    AT-64023

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 5965-8916E S21E

    AT-64023

    Abstract: S21E
    Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is ­designed for


    Original     		PDF AT-64023 AT-64023 5989-2658EN AV02-1221EN S21E

    AT-64023

    Abstract: S21E
    Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 S21E

    AT-64023

    Abstract: S21E 156 51 MA2670
    Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is ­designed for


    Original     		PDF AT-64023 AT-64023 reliaT-64023 5989-2658EN AV02-1221EN S21E 156 51 MA2670

    AT-64020

    Abstract: 200 mil BeO package
    Text: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64020 5965-8915E 5989-2657EN 200 mil BeO package

    AT-64020

    Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn
    Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is ­designed for


    Original     		PDF AT-64020 AT-64020 5989-2657EN AV02-1220EN S21E Silicon Bipolar Transistor 200 mil BeO package npn

    200 mil BeO package

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107
    Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and


    Original     		PDF AT-64020 AT-64020 5965-8915E 5989-2657EN 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 5965-8916E 5989-2658EN

    bipolar transistor s-parameter

    Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ
    Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed


    Original     		PDF AT-64023 AT-64023 5965-8916E 5989-2658EN bipolar transistor s-parameter bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ

    transistor s11 s12 s21 s22

    Abstract: No abstract text available
    Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


    Original     		PDF AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22

    AT-64020

    Abstract: No abstract text available
    Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64020

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64020

    AT-60500

    Abstract: AT-01635 AT-21400 AT21400 AT-60586
    Text: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0


    OCR Scan     		PDF AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT21400 AT-60586

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor­ 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic


    OCR Scan     		PDF AT-64023 AT-64023 5965-8916E 0017fc