AT-64020
Abstract: AT64020 AT-64023
Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk
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AT-64020
AT-64023
AT-64020
AT64020
AT-64023
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MRF328
Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and
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AN790/D
AN790
MRF328
MRF243
mrf245
MRF648
MRF463
Motorola transistors MRF648
MRF460
Barnes RM2A
Motorola transistors MRF455
Motorola transistors MRF454
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at6400
Abstract: AT-64000-GP4 AT-64000
Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and
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AT-64000
AT-64000
AT-64000-GP4
AV01-0274EN
AV02-1929EN
at6400
AT-64000-GP4
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at 64000
Abstract: at64000 S21E at-64000
Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over
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AT-64000
AT-64000
AT-64000-GP4
AV01-0274EN
at 64000
at64000
S21E
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sm 4109
Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature
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AT-30511
OT-143
AT-30533
OT-23
AT-31011
AT-31033
AT-64020
AT-64023
AT-31625
sm 4109
.g1 sot23
30533
41410
AT-30533
AT-31011
AT-31033
AT-32011
AT-41511
AT-32063
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Bipolar Transistors Selection Guide
Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature
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AT-30511
AT-30533
AT-31011
AT-31033
AT-32011
AT-32032
AT-32033
AT-32063
AT-41410
AT-41411
Bipolar Transistors Selection Guide
transistor G1
MSOP-3
AT-42010
AT-41511
200 mil BeO transistor
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GHZ micro-X Package
Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature
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AT-30511
OT-143
OT-23
AT-30533
AT-31011
AT-31033
ATF-45101
ATF-45171
ATF-46101
GHZ micro-X Package
Hewlett-Packard MICRO-X
S parameters for ATF 10136
micro-x
200 mil BeO package
AT-32032
ATF-13336
ATF-13786
at42010
ATF-10136
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AT64020
Abstract: AT-64020 S21E
Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64020
AT-64020
AT64020
S21E
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Silicon Bipolar Transistor 35 MICRO-X
Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X
Text: BIPOLARICS, INC. Part Number B30V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 27.0 dBm, P1dB @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B30V140 is a high performance, low cost silicon bipolar
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B30V140
B30V140
B30V180
B30V1160
Silicon Bipolar Transistor 35 MICRO-X
Silicon Bipolar Transistor MICRO-X
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AT-64020
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64020
AT-64020
5965-8915E
S21E
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AT-64023
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
S21E
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AT-64023
Abstract: S21E
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for
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AT-64023
AT-64023
5989-2658EN
AV02-1221EN
S21E
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AT-64023
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
S21E
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AT-64023
Abstract: S21E 156 51 MA2670
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for
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AT-64023
AT-64023
reliaT-64023
5989-2658EN
AV02-1221EN
S21E
156 51
MA2670
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AT-64020
Abstract: 200 mil BeO package
Text: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64020
5965-8915E
5989-2657EN
200 mil BeO package
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AT-64020
Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn
Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for
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AT-64020
AT-64020
5989-2657EN
AV02-1220EN
S21E
Silicon Bipolar Transistor
200 mil BeO package npn
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200 mil BeO package
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107
Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and
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AT-64020
AT-64020
5965-8915E
5989-2657EN
200 mil BeO package
RF NPN POWER TRANSISTOR 2.5 GHZ
TRANSISTOR 023
data sheet IC 74
IC vhf/uhf Amplifier
ic-110
RF NPN POWER TRANSISTOR 3 GHZ
RF POWER TRANSISTOR NPN
zo 107
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Untitled
Abstract: No abstract text available
Text: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
5965-8916E
5989-2658EN
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bipolar transistor s-parameter
Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ
Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed
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AT-64023
AT-64023
5965-8916E
5989-2658EN
bipolar transistor s-parameter
bipolar transistor ghz s-parameter
200 mil BeO package
RF NPN POWER TRANSISTOR 2.5 GHZ
20-50-200
TRANSISTOR 12 GHZ
RF TRANSISTOR 2.5 GHZ s parameter
ic-110
RF POWER TRANSISTOR NPN vhf
RF NPN POWER TRANSISTOR 3 GHZ
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transistor s11 s12 s21 s22
Abstract: No abstract text available
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
transistor s11 s12 s21 s22
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AT-64020
Abstract: No abstract text available
Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:
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AT-64020
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Untitled
Abstract: No abstract text available
Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:
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AT-64020
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AT-60500
Abstract: AT-01635 AT-21400 AT21400 AT-60586
Text: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0
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AT-41400
AT-60100
AT-60200
AT-60500
AT-41410
AT-41470
AT-60S10
AT-60S70
AT-41435
AT-41472
AT-01635
AT-21400
AT21400
AT-60586
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Untitled
Abstract: No abstract text available
Text: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
0017fc
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