200 MIL BEO PACKAGE NPN Search Results

200 MIL BEO PACKAGE NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)

200 MIL BEO PACKAGE NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
at6400 Abstract: AT-64000-GP4 AT-64000 Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over VHF, UHF and	Original	PDF	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN AV02-1929EN at6400 AT-64000-GP4
at 64000 Abstract: at64000 S21E at-64000 Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over	Original	PDF	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E
AT64020 Abstract: AT-64020 S21E Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64020 AT-64020 AT64020 S21E
AT-64020 Abstract: S21E Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64020 AT-64020 5965-8915E S21E
AT-64023 Abstract: S21E Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64023 AT-64023 5965-8916E S21E
AT-64023 Abstract: S21E Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64023 AT-64023 S21E
AT-64023 Abstract: S21E Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for	Original	PDF	AT-64023 AT-64023 5989-2658EN AV02-1221EN S21E
AT64020 Abstract: AT-64020 Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64020 AT-64020 5965-8915E AT64020
AT-64020 Abstract: 200 mil BeO package Text: Agilent AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64020 5965-8915E 5989-2657EN 200 mil BeO package
AT-64020 Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for	Original	PDF	AT-64020 AT-64020 5989-2657EN AV02-1220EN S21E Silicon Bipolar Transistor 200 mil BeO package npn
AT-64023 Abstract: S21E 156 51 MA2670 Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for	Original	PDF	AT-64023 AT-64023 reliaT-64023 5989-2658EN AV02-1221EN S21E 156 51 MA2670
200 mil BeO package Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107 Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and	Original	PDF	AT-64020 AT-64020 5965-8915E 5989-2657EN 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107
Untitled Abstract: No abstract text available Text: Agilent AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic	Original	PDF	AT-64023 5965-8916E 5989-2658EN
bipolar transistor s-parameter Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed	Original	PDF	AT-64023 AT-64023 5965-8916E 5989-2658EN bipolar transistor s-parameter bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ

C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Untitled Abstract: No abstract text available Text: ZPioducti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLX95 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the	Original	PDF	BLX95 200mA;
AT-64020 Abstract: No abstract text available Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:	OCR Scan	PDF	AT-64020
Untitled Abstract: No abstract text available Text: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic	OCR Scan	PDF	AT-64023 AT-64023 5965-8916E 0017fc
Untitled Abstract: No abstract text available Text: W tiol H EW LETT mL'HM PA C K A R D Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features D escription • High Output Power: 27.5 dBm Typical Px^ at 2.0 GHz 26.5 dBm Typical Px^ at 4.0 GHz The AT-64020 is a high perfor m ance NPN silicon bipolar	OCR Scan	PDF	AT-64020 AT-64020 QQ17b7fi 5965-8915E
AT-64020 Abstract: No abstract text available Text: What H E W L E T T * mLliM PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features Description • High Output Power: 27.5 dBm Typical PldB at 2.0 GHz 26.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 10.0dBTypicaIGldBat2.0 GHz	OCR Scan	PDF	AT-64020 AT-64020
Untitled Abstract: No abstract text available Text: What H E W L E T T * mLliMPACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical PldB at 2.0 GHz 26.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 12.5dBTypicaIGldBat2.0 GHz	OCR Scan	PDF	AT-64023 AT-64023
AVANTEK transistor Abstract: No abstract text available Text: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:	OCR Scan	PDF	AT-64023 AT-64023 AVANTEK transistor
Untitled Abstract: No abstract text available Text: AT-64023 Up to 4 GHz Linear Powér Silicon Bipolar Transistor Vfìjm H EW LETT mLHÆ P A C K A R D Features 230 mil BeO Flange Package • High Output Power: 28.0 dBm typical Pi ¿Bat 2.0 GHz 27.0 dBm typical Pi «»at 4.0 GHz • High Gain at 1 dB Compression:	OCR Scan	PDF	AT-64023
generator of frequency 900 MHz Abstract: TRANSISTOR D 880 Text: ASP-0910 10 Watt, 900 MHz Silicon Power Transistor Whp% H EW LETT mi'tim PACK ARD Features • • • • • • Power Flange Power Out: 10 Watts Common Base Class C Power Transistor Frequency: 800-960 MHz Voltage: 25 V Efficiency: 50% Min. Load Mismatch Tolerance: 10:1	OCR Scan	PDF	ASP-0910 SP-0910 generator of frequency 900 MHz TRANSISTOR D 880

200 MIL BEO PACKAGE NPN Search Results

200 MIL BEO PACKAGE NPN Result Highlights (5)

200 MIL BEO PACKAGE NPN Datasheets Context Search

at6400

at 64000

AT64020

AT-64020

AT-64023

AT-64023

AT-64023

AT64020

AT-64020

AT-64020

AT-64023

200 mil BeO package

Untitled

bipolar transistor s-parameter

C42V5964

Untitled

AT-64020

Untitled

Untitled

AT-64020

Untitled

AVANTEK transistor

Untitled

generator of frequency 900 MHz