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    200 MIL BEO PACKAGE Search Results

    200 MIL BEO PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    200 MIL BEO PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT-64020

    Abstract: AT64020 AT-64023
    Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk


    Original     		PDF AT-64020 AT-64023 AT-64020 AT64020 AT-64023

    MSA-0420

    Abstract: MSA0420
    Text: Agilent MSA-0420 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description • 8.5 dB Typical Gain at 1.0 GHz 200 mil BeO Package • 16.0 dBm Typical P1 dB at 1.0 GHz The MSA-0420 is a high performance silicon bipolar Monolithic


    Original     		PDF MSA-0420 MSA-0420 5965-9574E 5989-2752EN MSA0420

    MRF328

    Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
    Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and


    Original     		PDF AN790/D AN790 MRF328 MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454

    AT-64023

    Abstract: S21E
    Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is ­designed for


    Original     		PDF AT-64023 AT-64023 5989-2658EN AV02-1221EN S21E

    AT-64023

    Abstract: S21E 156 51 MA2670
    Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is ­designed for


    Original     		PDF AT-64023 AT-64023 reliaT-64023 5989-2658EN AV02-1221EN S21E 156 51 MA2670

    AT-64020

    Abstract: S21E Silicon Bipolar Transistor 200 mil BeO package npn
    Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is ­designed for


    Original     		PDF AT-64020 AT-64020 5989-2657EN AV02-1220EN S21E Silicon Bipolar Transistor 200 mil BeO package npn

    200 mil BeO package

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107
    Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and


    Original     		PDF AT-64020 AT-64020 5965-8915E 5989-2657EN 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107

    200 mil BeO package

    Abstract: transistor 2 ghz zo 107 MSA-0520 NF50
    Text: MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use


    Original     		PDF MSA-0520 MSA-0520 5965-9582E 5989-2755EN 200 mil BeO package transistor 2 ghz zo 107 NF50

    100C

    Abstract: MSA-0520 NF50
    Text: MSA-0520 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use as a general


    Original     		PDF MSA-0520 MSA-0520 exte62 5989-2755EN AV02-1228EN 100C NF50

    bipolar transistor s-parameter

    Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ
    Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed


    Original     		PDF AT-64023 AT-64023 5965-8916E 5989-2658EN bipolar transistor s-parameter bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ

    MSA-1120

    Abstract: NF460
    Text: MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic


    Original     		PDF MSA-1120 MSA-1120 5989-2748EN AV02-1234EN NF460

    200 mil BeO package

    Abstract: msa-1120 MMIC marking code R
    Text: MSA-1120 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high


    Original     		PDF MSA-1120 MSA-1120 temp62 5965-9559E 5989-2748EN 200 mil BeO package MMIC marking code R

    Untitled

    Abstract: No abstract text available
    Text: blE J> HEULETT-PACKAR»/ CNPNTS W hoI HEW LETT A"KM PACKARD m MMM7Sfl4 □ DlOO'ia b^l IHPA MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 200 mil BeO Package • • Cascadable 50 £2 Gain Block High Output Power:


    OCR Scan     		PDF MSA-0520 MSA-0520

    AVANTEK msa 0420

    Abstract: avantek Avantek amplifier 167 avantek microwave MSA-0420 Avantek S MODAMP LD110 200 mil BeO package
    Text: 0AVANTEK MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 200 mil BeO Package Features • • • • • • Cascadable 50 n Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 d Bm typical Pi dB at 1.0 GHz


    OCR Scan     		PDF MSA-0420 MSA-0420 AVANTEK msa 0420 avantek Avantek amplifier 167 avantek microwave Avantek S MODAMP LD110 200 mil BeO package

    Untitled

    Abstract: No abstract text available
    Text: O a v a n te k MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 200 mil BeO Package Features • • • • • • Cascadable 50 £1 Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 dBm typical Pi dB at 1.0 GHz


    OCR Scan     		PDF MSA-0420 MSA-0420

    Untitled

    Abstract: No abstract text available
    Text: VI H EW LETT PACKARD MSA-0520 M ODAM P Cascadable Silicon Bipolar M onolithic M icrowave Integrated C ircu it A m plifiers 200 mil BeO Package Features • • Cascadabie 50 i2 Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz • Low Distortion:


    OCR Scan     		PDF MSA-0520

    avantek msa0520

    Abstract: Avantek S AVANTEK MSA-0520 NF50 avantek microwave Avantek UA-152
    Text: dala sheet O A V A N T E K MSA-0520 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Features • • • • • Avantek 200 mil BeO Package Cascadable 50 Q. Gain Block High Output Power: +23 dBm typical Pi dB at 1.0 GHz


    OCR Scan     		PDF MSA-0520 MSA-0520 ADS-1546/R-9-89 avantek msa0520 Avantek S AVANTEK NF50 avantek microwave Avantek UA-152

    Untitled

    Abstract: No abstract text available
    Text: m H E W LE TT PACKARD MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features • • • • • • 200 mil BeO Package Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 4.0 GHz 16.0 dBm typical Pi dB at 1.0 GHz


    OCR Scan     		PDF MSA-0420 SA-0420

    Untitled

    Abstract: No abstract text available
    Text: MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT IV I P A C K A R D Features • • • • • • 200 mil BeO Package High Dynamic Range Cascadable 50 a or 75 Q Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz


    OCR Scan     		PDF MSA-1120

    Untitled

    Abstract: No abstract text available
    Text: H EWL ETT -PA CKA RD/ CMPNTS blE J> H E W LE T T PACKARD m • 4447564 0G10150 Ifi? H H P A MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 200 mil BeO Package Features • • • • • • High Dynamic Range Cascadable


    OCR Scan     		PDF 0G10150 MSA-1120 MSA-1120

    AT-64020

    Abstract: No abstract text available
    Text: AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor W U dI HEW LETT mÜKM PACKARD Features • • • • • 200 mil BeO Package High Output Power: 2B.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64020

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC O a v a n 20E D t • imn tfc. DDDti?3D b ■ MSA-1120 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers e k ~-7 4 - r s - o / t Avantek 200 mil BeO Package Features • High Dynamic Range Cascadable 50 Q, or 75 ft Gain Block


    OCR Scan     		PDF MSA-1120 310-371-8717or

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK 20E INC D O avantek • • • • • 7 AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Features • OOO bS Sb Avantek 200 mil BeO Package High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi dBat 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64020

    Untitled

    Abstract: No abstract text available
    Text: H E W L E T T - P A C K A R D / C M PN TS blE ]> H EW LETT PACKARD m • MSA-0420 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 200 mil BeO Package Features • • • • • • IHPA 4 4 47 SÖ 4 O G l O G T b 5 0 2


    OCR Scan     		PDF MSA-0420 SA-0420