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    20 AMPERE DIODE Search Results

    20 AMPERE DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    20 AMPERE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHM2030JGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM2030JGP CURRENT 6 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.


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    PDF CHM2030JGP CHM2030JGP

    DIODE 83A

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JPT CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.


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    PDF CHM4501JPT DIODE 83A

    P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT

    Abstract: transistor DD 127 D
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM2030JPT CURRENT 6 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.


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    PDF CHM2030JPT P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT transistor DD 127 D

    CHM4501JGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts CHM4501JGP CURRENT 8.3 Ampere CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.


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    PDF CHM4501JGP CHM4501JGP

    1n5819 trr

    Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
    Text: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop


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    PDF 1N5817 1N5819 SR120 SR180 DO-41 UL94V-0 Plot-101, 1n5819 trr Khandelwal Herrmann Electronics 202E SR180 1n5817 trr

    CHM11C2JGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 20 Volts CHM11C2JGP CURRENT 7 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.


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    PDF CHM11C2JGP CHM11C2JGP

    P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT

    Abstract: diode 106 16V
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 20 Volts CHM11C2JPT CURRENT 7 Ampere CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.


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    PDF CHM11C2JPT P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT diode 106 16V

    Untitled

    Abstract: No abstract text available
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON


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    PDF MJ10005 250Vdc,

    CHM21A2PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM21A2PAGP CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


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    PDF CHM21A2PAGP O-252) CIRCU250 CHM21A2PAGP

    Untitled

    Abstract: No abstract text available
    Text: B120N Series Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-100Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability


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    PDF B120N 20-100Volts OD-323F OD-323F ML-STD-750 300us 21-Oct-2011

    B120N

    Abstract: B140N B160N
    Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability


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    PDF B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750 OD-323F1 B120N B140N B160N

    SOD-323F

    Abstract: b120n sod-323f diode B140N B160N
    Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current * High Current Capability


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    PDF B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750 SOD-323F b120n sod-323f diode B140N B160N

    gs 069

    Abstract: 20 ampere MOSFET datasheet
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM21A2PAPT CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


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    PDF CHM21A2PAPT O-252A O-252A) gs 069 20 ampere MOSFET datasheet

    MR1367

    Abstract: MR830 IN3889 1N3879-1N3883 1n49331n4937 1N3880 1N3891 1N3892 1N3893 1N4937
    Text: ● FAST RECOVERY SILICON RECTIFIERS vRM rep 50 100 ‘RM(wkg)’ 12 I 1 20 * Fi~re 1N3880 - I I.-,NIRQO - I I 30 thru 1N3SS3 11 N3SS9 thru 1N3S93 ‘lN~~99 thru WW3903 ● 200 ‘R(volts) 300 400 ● 600 , I I 11 N3S79 ● lFM(surge)* Ampere Ampere


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    PDF 1N3880 WW3903 1N3S93 1N4937 45MAX L17H0 MR1367 MR830 IN3889 1N3879-1N3883 1n49331n4937 1N3880 1N3891 1N3892 1N3893 1N4937

    Untitled

    Abstract: No abstract text available
    Text: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.


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    PDF 270-VDC, 20-ampere Mil-PRF-38534 10-AMP 90XXX-10/M 20-AMP 90XXX-20/M 11779i631-981-2400iFAX 631-981-8888iISO MIL-38534

    Amp. mosfet 1000 watt

    Abstract: transorb diode transorb transorb applications notes MIL-STD-1772 400 AMP 28 VDC CIRCUIT BREAKER sspc 270V 10 amp igbt 1000 volt 200w computer power supply Circuit diagram sspc
    Text: SERIES 90000–28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.


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    PDF 270-VDC, 20-ampere versions--28 20-AMP 10-AMP MIL-STD-883, Mil-Std-1772 Amp. mosfet 1000 watt transorb diode transorb transorb applications notes 400 AMP 28 VDC CIRCUIT BREAKER sspc 270V 10 amp igbt 1000 volt 200w computer power supply Circuit diagram sspc

    LL5817

    Abstract: LL5818 LL5819 melf diodes color
    Text: LL5817 - LL5819 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 1.0 Ampere MELF Cathode Mark FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop


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    PDF LL5817 LL5819 MIL-STD-202, LL5817 LL5818 LL5818 LL5819 melf diodes color

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


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    PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: TH09/2479 TH97/2478 www.eicsemi.com 1N5820 - 1N5822 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Ampere DO - 201AD FEATURES : * * * * * * * * High current capability High surge current capability High reliability


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    PDF TH09/2479 TH97/2478 1N5820 1N5822 TH07/1033 201AD DO-201AD UL94V-O MIL-STD-202, 1N5820

    Untitled

    Abstract: No abstract text available
    Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current


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    PDF B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750

    MJ-10000

    Abstract: No abstract text available
    Text: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON


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    PDF MJ10000 MJ10000 MJ-10000

    transorb failure

    Abstract: transorb sspc 270V transorb capacitance 270vdc
    Text: SERIES 91000– 28 & 270-VDC, @10 & 20 AMPS GENERAL DESCRIPTION Series 91000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breakers.


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    PDF 270-VDC, 20-ampere versions--28 Mil-PRF-38534 transorb failure transorb sspc 270V transorb capacitance 270vdc

    Untitled

    Abstract: No abstract text available
    Text: B120N/B140N B160N Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free REVERSE VOLTAGE 20-60Volts FORWARD CURRENT 1.0 Ampere Features: * Surface Mounted Applications * Metal-Semiconductor Junction with Guardring * Epitaxial Construction * Low Leakage Current


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    PDF B120N/B140N B160N 20-60Volts OD-323F OD-323F ML-STD-750

    270 VDC CIRCUIT BREAKER

    Abstract: sspc 270V 400 AMP 28 VDC CIRCUIT BREAKER U/25/20/TN26/15/850/270 VDC CIRCUIT BREAKER
    Text: SERIES 90000-28 & 270-VOLT, @ 10 & 20 AMPS GENERAL DESCRIPTION Series 90000 Solid-State Power Controllers are TTL-controlled power switches with programmable trip characteristics designed for use as solid-state replacements for 3- to 20-ampere circuit breaker's.


    OCR Scan
    PDF 270-VOLT, 20-ampere Mil-Std-1772 270 VDC CIRCUIT BREAKER sspc 270V 400 AMP 28 VDC CIRCUIT BREAKER U/25/20/TN26/15/850/270 VDC CIRCUIT BREAKER