IGBT 50 amp 1000 volt
Abstract: CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps
Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design
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OM9038SF
OM9039SF
12-Pin
IGBT 50 amp 1000 volt
CQ-111
100 Amp current 1300 volt diode
12 VOLT 100 AMP smps
IGBT 250 amp
smps 12 volt
OM9038SF
OM9039SF
12 VOLT 150 AMP smps
150 VOLT 10 AMP smps
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SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C015-0
125OC
SCD0966-1
15 amp 1000 Volt Diode
125OC
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C015-1-W-Ag
125OC
SCD0963-1
15 amp 1000 Volt Diode
125OC
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125OC
Abstract: SB035C015 15 amp 1000 Volt Diode
Text: SB035C015 - 0.5-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB035C015
125OC
SCD0962-1
125OC
15 amp 1000 Volt Diode
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125OC
Abstract: Schottky diode wafer
Text: SB035C015-1-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB035C015-1-W-Ag
SB065C040-1-W-Ag
125OC
SCD0961-1
125OC
Schottky diode wafer
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TF-10PC1UC
Abstract: glass fuse color code 100761 diode catalogue TF-18PC1UC thermal fuse color code chart 12077411 12110127 glass diode color codes junior power timer
Text: DILL BLOX MODULAR POWER DISTRIBUTION SYSTEMS PROVIDING SOLUTIONS FOR: POWER DISTRIBUTION DESIGNED FOR: FUSES CIRCUIT PROTECTION TERMINAL PROTECTION CIRCUIT BREAKERS RELAYS FLASHERS LIGHTS POWER TAPS DIODES CUSTOM COMPONENTS. Fargo Assembly of PA., Inc. 800 West Washington St. P.O. Box 550
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TF-10PC1UC.
TF-13PC1UC.
TF-14PC1UC.
TF-17PC1UC.
TF-18PC1UC.
TF-10PC1UC
glass fuse color code
100761
diode catalogue
TF-18PC1UC
thermal fuse color code chart
12077411
12110127
glass diode color codes
junior power timer
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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use igbt for 3 phase induction motor
Abstract: 3 phase brushless 400v
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
use igbt for 3 phase induction motor
3 phase brushless 400v
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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MSK4357
Abstract: 1000 Amp current diode
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)
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MIL-PRF-38534
25KHz
MSK4357
1000 Amp current diode
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10 amp igbt 1000 volt
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
10 amp igbt 1000 volt
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SB065
Abstract: 125OC
Text: SB060C020-3-W-Ag Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB060C020-3-W-Ag
125OC
SCD0979-1
SB065
125OC
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125OC
Abstract: No abstract text available
Text: SB157/106C025-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage
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SB157/106C025-20-W-Ag/Al
125OC
SCD0975-1
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125OC
Abstract: No abstract text available
Text: SB157/106C015-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage
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SB157/106C015-20-W-Ag/Al
125OC
SCD0972-1
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100 Amp current 1300 volt diode
Abstract: 125OC
Text: SB051C020-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB051C020-1-W-Ag
125OC
SCD0976-1
100 Amp current 1300 volt diode
125OC
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Untitled
Abstract: No abstract text available
Text: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime
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CFSH05-20L
CFSH05-20L
OD-882L
100mA
500mA
25-April
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Untitled
Abstract: No abstract text available
Text: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime
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CFSH05-20L
CFSH05-20L
OD-882L
100mA
500mA
25-April
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transistor c1417
Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
Text: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components
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980nm)
100ppb
transistor c1417
TH-C1720-F6
THOMSON ELECTRONIQUES TUBES
c1417
Thomson-CSF semiconductor
c1417 transistor
TH-C1720
Thomson-CSF power laser diode price list
C5520
c5530
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100 Amp current 1300 volt diode
Abstract: 125OC
Text: SB051C015-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB051C015-1-W-Ag
125OC
SCD0964-1
100 Amp current 1300 volt diode
125OC
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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OM9038SF
Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design
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12-Pin
OM9038SF
0M9Q39SF
OM9039SF
12 VOLT 100 AMP smps
diode v3e
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Untitled
Abstract: No abstract text available
Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design
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OCR Scan
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OM9038SF
OM9039SF
12-Pin
12PLCS.
305Oswfcud
534-5776FAX
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TRS601
Abstract: No abstract text available
Text: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors
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b17aD
TRS601
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