Untitled
Abstract: No abstract text available
Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE50
O-204AA/AE)
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Untitled
Abstract: No abstract text available
Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE40
O-204AA/AE)
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mosfet 10a 800v
Abstract: IRFAE50 diode 71A
Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE50
O-204AA/AE)
p252-7105
mosfet 10a 800v
IRFAE50
diode 71A
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mosfet 10a 800v
Abstract: IRFAE30
Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE30
O-204AA/AE)
parame252-7105
mosfet 10a 800v
IRFAE30
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Untitled
Abstract: No abstract text available
Text: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE30
O-204AA/AE)
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mosfet 10a 800v
Abstract: IRFAE40
Text: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAE40
O-204AA/AE)
mosfet 10a 800v
IRFAE40
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"VDSS 800V" mosfet
Abstract: IRFBE30L IRFBE30S
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
IRFBE30S/IRFBE30L
"VDSS 800V" mosfet
IRFBE30L
IRFBE30S
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IRFNG50
Abstract: mosfet 10a 800v high power 91556A
Text: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1556A
IRFNG50
IRFNG50
mosfet 10a 800v high power
91556A
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Untitled
Abstract: No abstract text available
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
08-Mar-07
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IRFAG50
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG50
O-204AA/AE)
electrical252-7105
IRFAG50
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BTA12 600V
Abstract: scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STD25NF20 600v 5A scr diac triac bta08 triac 800V 1A
Text: LIGHTING Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions STBV68 STBV45 STBV42 STBV32 STX13003 ST13003 BULT118 BULK128D-B BULD1101ET4 STD13003-1 BULD118D-1 BULB39DT4 BULB49DT4 STB13005-1 BUL118 BUL128 BUL128D-B
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STBV68
STBV45
STBV42
STBV32
STX13003
ST13003
BULT118
BULK128D-B
BULD1101ET4
STD13003-1
BTA12 600V
scr 600v 12a TO-220
triac 600v. 1a. to 92
diac 30v
triac 1200V
triac 10A
STD25NF20
600v 5A scr
diac triac bta08
triac 800V 1A
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800v irf
Abstract: IRFBE30L IRFBE30S 95507 irf 480
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
EIA-418.
800v irf
IRFBE30L
IRFBE30S
95507
irf 480
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Untitled
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG50
O-204AA/AE)
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IRFAG40
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG40
O-204AA/AE)
IRFAG40
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mosfet 10a 800v
Abstract: IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V
Text: PD - 90711B POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 R DS(on) 2.0Ω ID 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90711B
O-254AA)
IRFMG50
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
mosfet 10a 800v
IRFMG50
mosfet 10a 800v high power
IR rectifier diode 100A 800V
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Untitled
Abstract: No abstract text available
Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG40
O-204AA/AE)
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IRFAG30
Abstract: No abstract text available
Text: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG30
O-204AA/AE)
IRFAG30
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mosfet 10a 800v
Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90711C
O-254AA)
IRFMG50
O-254AA.
MIL-PRF-19500
mosfet 10a 800v
MOSFET 800V 10A
irf 44 n
N CHANNEL MOSFET 10A 1000V
IRFMG50
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Untitled
Abstract: No abstract text available
Text: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG30
O-204AA/AE)
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IRFBE30L
Abstract: IRFBE30S
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
12-Mar-07
IRFBE30L
IRFBE30S
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smd diode 39a
Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Text: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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1555A
IRFNG40
smd diode 39a
mosfet 10a 800v
IRFNG40
mosfet 10a 800v high power
smd+diode+39a
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CD 1517
Abstract: IRFIBE20G
Text: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =
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IRFIBE20G
O-220
CD 1517
IRFIBE20G
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1RFPE40
Abstract: IRFPE40 NC1636 IR rectifier diode 100A 800V 54A-V
Text: |^ t ¡ 0 f " f lc l[ t ÍO r i3 l HI 4Ô554S2 D01SSR2 DQ2 M I N R K l Rectifier IRFPE40 HEXFET® Power M O S F E T • • • • • • PD-9.578B INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching
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554S2
D01SSR2
IRFPE40
O-247
O-220
UflSS452
1RFPE40
IRFPE40
NC1636
IR rectifier diode 100A 800V
54A-V
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Untitled
Abstract: No abstract text available
Text: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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465S45S
001S2b2
IRFIBE30G
O-220
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