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    2.8 MHZ INFRARED Search Results

    2.8 MHZ INFRARED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    Infrared-Human-Sensor Renesas Electronics Corporation Infrared Human Sensor Reference Design Visit Renesas Electronics Corporation
    R80186 Rochester Electronics LLC Microprocessor, 16-Bit, 8MHz, CMOS, CQCC68, CERAMIC, LCC-68 Visit Rochester Electronics LLC Buy
    8501001YA Rochester Electronics LLC Microprocessor, 16-Bit, 8MHz, CMOS, CQFP68, CERAMIC, QFP-68 Visit Rochester Electronics LLC Buy
    D8086-2 Rochester Electronics LLC Microprocessor, 16-Bit, 8MHz, NMOS, CDIP40, CERAMIC, DIP-40 Visit Rochester Electronics LLC Buy
    MD8086-2/B Rochester Electronics LLC Microprocessor, 16-Bit, 8MHz, HMOS, CDIP40, CERAMIC, DIP-40 Visit Rochester Electronics LLC Buy

    2.8 MHZ INFRARED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2031

    Abstract: 10-PIN HS350 UPG2031TQ UPG2031TQ-E1 VP215
    Text: NEC's L-BAND SP3T SWITCH UPG2031TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.45 dB TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz LINS = 0.55 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz NEC's UPG2031TQ is an L-band SP3T GaAs FET switch for CDMA/PCS/GPS triple mode digital cellular telephone applications. The device can operate from 500 MHz to above 2.0


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    PDF UPG2031TQ UPG2031TQ 10-pin HS350 nec 2031 HS350 UPG2031TQ-E1 VP215

    nec 2031

    Abstract: 10-PIN HS350 UPG2031TQ UPG2031TQ-E1-A VP215
    Text: NEC's L-BAND SP3T SWITCH UPG2031TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.45 dB TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz LINS = 0.55 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz NEC's UPG2031TQ is an L-band SP3T GaAs FET switch for CDMA/PCS/GPS triple mode digital cellular telephone applications. The device can operate from 500 MHz to above 2.0


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    PDF UPG2031TQ UPG2031TQ 10-pin nec 2031 HS350 UPG2031TQ-E1-A VP215

    LN78

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode Unit : mm 2.9±0.25 For optical control cystems 4.5±0.3 1.5 1.2 0.9 1.7±0.2 0.8 12.8 min. 2.8 High-speed modulation capability : fC = 12 MHz 2.4 3.9±0.3 Features High-power output, high-efficiency : PO = 10 mW typ.


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    ND transistor

    Abstract: No abstract text available
    Text: a PLL Frequency Synthesizer Preliminary Technical Data ADF4116/ADF4117/ADF4118 FEATURES ADF4116: 550 MHz ADF4117: 1.2 GHz ADF4118: 2.8 GHz +2.7 V to +5.5 V Power Supply Separate Vp Allows Extended Tuning Voltage in 3V Systems Selectable Charge Pump Currents


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    PDF ADF4116: ADF4117: ADF4118: ADF4117/ADF4118: ADF4116/ADF4117/ADF4118 ND transistor

    ADF4116

    Abstract: ADF4117 ADF4118 ADF41163
    Text: a PLL Frequency Synthesizer Preliminary Technical Data ADF4116/ADF4117/ADF4118 FEATURES ADF4116: 550 MHz ADF4117: 1.2 GHz ADF4118: 2.8 GHz +2.7 V to +5.5 V Power Supply Separate Vp Allows Extended Tuning Voltage in 3V Systems Dual Modulus Prescaler ADF4116:


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    PDF ADF4116/ADF4117/ADF4118 ADF4116: ADF4117: ADF4118: ADF4117/ADF4118: ADF4116/ADF4117/ADF4118 13-bit ADF4116, 250uA, ADF4116 ADF4117 ADF4118 ADF41163

    LN78

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode Unit : mm 2.9±0.25 For optical control cystems 4.5±0.3 1.5 1.2 0.9 1.7±0.2 0.8 12.8 min. 2.8 High-speed modulation capability : fC = 12 MHz 2.4 3.9±0.3 Features High-power output, high-efficiency : PO = 10 mW typ.


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    850 nm Infrared Emitting Diode

    Abstract: No abstract text available
    Text: Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 1.2 4.5±0.3 • Features 3.9±0.3 1.7±0.2 (0.9) (0.8) 12.8 min. 2.8 (2.4) (1.5) • High-power output, high-efficiency: PO = 10 mW (typ.) • High-speed modulation capability: fC = 12 MHz


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    GaAs 850 nm Infrared Emitting Diode

    Abstract: PO 102 LN78
    Text: Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode For optical control systems Unit: mm 2.9±0.25 1.2 4.5±0.3 • Features 3.9±0.3 1.7±0.2 (0.9) (0.8) 12.8 min. 2.8 (2.4) (1.5) • High-power output, high-efficiency: PO = 10 mW (typ.) • High-speed modulation capability: fC = 12 MHz


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    ND transistor

    Abstract: VP 1176 ADF41139 df4111
    Text: = PLL Frequency Synthesizer Preliminary Technical Data ADF4110/ADF4111/ADF4112/ADF4113 FEATURES ADF4110: 550 MHz ADF4111: 1.2 GHz ADF4112: 2.8 GHz ADF4113: 3.7GHz +2.7 V to +5.5 V Power Supply Separate VP Allows Extended Tuning Voltage in 3V Systems Programmable Dual Modulus Prescaler


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    PDF ADF4110: ADF4111: ADF4112: ADF4113: ADF4110/ADF4111/ADF4112/ADF4113 ND transistor VP 1176 ADF41139 df4111

    Untitled

    Abstract: No abstract text available
    Text: = PLL Frequency Synthesizer Preliminary Technical Data ADF4110/ADF4111/ADF4112/ADF4113 FEATURES ADF4110: 550 MHz ADF4111: 1.2 GHz ADF4112: 2.8 GHz ADF4113: 3.7GHz +2.7 V to +5.5 V Power Supply Separate VP Allows Extended Tuning Voltage in 3V Systems Programmable Dual Modulus Prescaler


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    PDF ADF4110/ADF4111/ADF4112/ADF4113 ADF4110: ADF4111: ADF4112: ADF4113: ADF4110

    K 3264 transistor technical data

    Abstract: ADF41104 F4111 ADF4110 ADF4111 ADF4112 ADF4113 ADF41116 db16ab
    Text: = PLL Frequency Synthesizer Preliminary Technical Data ADF4110/ADF4111/ADF4112/ADF4113 FEATURES ADF4110: 550 MHz ADF4111: 1.2 GHz ADF4112: 2.8 GHz ADF4113: 3.7GHz +2.7 V to +5.5 V Power Supply Separate VP Allows Extended Tuning Voltage in 3V Systems Programmable Dual Modulus Prescaler


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    PDF ADF4110/ADF4111/ADF4112/ADF4113 ADF4110: ADF4111: ADF4112: ADF4113: ADF4110 K 3264 transistor technical data ADF41104 F4111 ADF4111 ADF4112 ADF4113 ADF41116 db16ab

    Untitled

    Abstract: No abstract text available
    Text: HOME PHONE NETWORKING BANDPASS FILTER Supports HomePNA 1M8 Specifications Includes protection circuitry, isolation and EMI filtering Designed to withstand 235°C peak infrared reflow temperature Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C


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    PDF HP-8751A F-39270

    B6003L

    Abstract: B6003LT B960 HP-8751A
    Text: HOME PHONE NETWORKING BANDPASS FILTER Supports HomePNA 1M8 Specifications Includes protection circuitry, isolation and EMI filtering Designed to withstand 235°C peak infrared reflow temperature Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C


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    PDF HP-8751A F-39270 B6003L B6003LT B960

    1055

    Abstract: B6003L B6003LT B960 HP-8751A
    Text: HOME PHONE NETWORKING BANDPASS FILTER Supports HomePNA 1M8 Specifications Includes protection circuitry, isolation and EMI filtering Designed to withstand 235°C peak infrared reflow temperature Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C


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    PDF HP-8751A 1055 B6003L B6003LT B960

    audio squelch circuit

    Abstract: Wideband FM demodulator audio amplifier stereo headphone 16 ohm 3v mW Wideband FM Modulator infrared receiver led 2 pin audio frequency generator hifi power amp schematic RX-2 -G 2 Mhz fm demodulator audio amplifier amp stereo headphone 16 ohm 3v
    Text: TSH511 HiFi stereo/mono infrared receiver Stereo sub-carrier demodulator • ■ ■ ■ ■ ■ ■ ■ Supply voltage: 2.3V to 5.5V Carriers frequency range: 0.4 to 11 MHz Two FM receivers for stereo Integrated audio buffers Audio outputs: 20 mW into 16 ohms


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    PDF TSH511 TSH511 audio squelch circuit Wideband FM demodulator audio amplifier stereo headphone 16 ohm 3v mW Wideband FM Modulator infrared receiver led 2 pin audio frequency generator hifi power amp schematic RX-2 -G 2 Mhz fm demodulator audio amplifier amp stereo headphone 16 ohm 3v

    hifi power amp schematic

    Abstract: TQFP44 TSH511 TSH511C TSH511CF TSH511CFT TSH512 led am voice transmitter and receiver circuit 6 channel Audio MIXER SCHEMATIC DIAGRAM
    Text: TSH511 HiFi stereo/mono infrared receiver Stereo sub-carrier demodulator • ■ ■ ■ ■ ■ ■ ■ Supply voltage: 2.3V to 5.5V Carriers frequency range: 0.4 to 11 MHz Two FM receivers for stereo Integrated audio buffers Audio outputs: 20 mW into 16 ohms


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    PDF TSH511 TSH511 hifi power amp schematic TQFP44 TSH511C TSH511CF TSH511CFT TSH512 led am voice transmitter and receiver circuit 6 channel Audio MIXER SCHEMATIC DIAGRAM

    hamamatsu S1223

    Abstract: S1223
    Text: Si PIN photodiodes S1223 series For visible to near IR, precision photometry Features Applications High sensitivity in visible to near infrared range Optical measurement equipment High reliability Analytical equipment, etc. High-speed response S1223: fc=30 MHz


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    PDF S1223 S1223: S1223-01: S1223 S1223-01 S1223-01 absolu69 KPIN1050E02 hamamatsu S1223

    si pin photodiode

    Abstract: S5821 S5821-01 S5821-02 S5821-03
    Text: PHOTODIODE Si PIN photodiode S5821 series High performance, high reliability Si PIN photodiodes S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series provides high performance and reliability at a low cost.


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    PDF S5821 S5821 S5821-01 S5821-02 S5821-03 SE-171 KPIN1010E02 si pin photodiode S5821-01 S5821-02 S5821-03

    S5821

    Abstract: S5821-01 S5821-02 S5821-03
    Text: PHOTODIODE Si PIN photodiode S5821 series High performance, high reliability Si PIN photodiodes S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series provides high performance and reliability at a low cost.


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    PDF S5821 S5821 S5821-01 S5821-02 S5821-03 SE-171 KPIN1010E02 S5821-01 S5821-02 S5821-03

    si photodiode

    Abstract: S5821 S5821-01 S5821-02 S5821-03
    Text: PHOTODIODE Si PIN photodiode S5821 series High performance, high reliability Si PIN photodiodes S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series provides high performance and reliability at a low cost.


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    PDF S5821 S5821 S5821-01 S5821-02 S5821-03 SE-171 KPIN1010E01 si photodiode S5821-01 S5821-02 S5821-03

    S5821

    Abstract: S5821-01 S5821-02 S5821-03
    Text: PHOTODIODE Si PIN photodiode S5821 series High performance, high reliability Si PIN photodiodes S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series provides high performance and reliability at a low cost.


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    PDF S5821 S5821 S5821-01 S5821-02 S5821-03 SE-171 KPIN1010E02 S5821-01 S5821-02 S5821-03

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S5971, S5972, S5973 series High-speed photodiodes S5973 series: 1 GHz S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. S5973 series


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    PDF S5971, S5972, S5973 S5972 S5973-01) S5973-02)

    infrared wireless headphones circuit diagram

    Abstract: simple surround circuit diagram infrared audio signal TA2061AF 5.1 channel surround sound IC 2SC2883 TLN225 circuit diagram for simple IR transmitter using u simple circuit diagram of surround sound
    Text: TOSHIBA TENTATIVE TA2061AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA2061AF INFRARED LINEAR AUDIO SIGNAL TRANSMIT IC TA2061AF is an IC developed for use in the transmitter of infrared audio signal transmit/receive systems. The device incorporates a 2.3/2.8 MHz voltage controlled oscillator


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    PDF TA2061AF TA2061AF 2SC2883 TLN225 SSOP16-P-225-1 infrared wireless headphones circuit diagram simple surround circuit diagram infrared audio signal 5.1 channel surround sound IC TLN225 circuit diagram for simple IR transmitter using u simple circuit diagram of surround sound

    ADF41188

    Abstract: bfw 10 transistor TRANSISTOR BFW 11 TRANSISTOR BFW 11 pin diagram ADF4116 ADF4117 ADF4118 ADF41163 ADF41186
    Text: ANALOG DEVICES PLL Frequency Synthesizer Preliminary Technical Data FEATURES ADF4116: 550 MHz ADF4117: 1.2 GHz ADF4118: 2.8 GHz +2.7 V to +5.5 V Power Supply Separate V pAllows Extended Tuning Voltage in 3V Systems Dual Modulus Prescaler ADF4116: 8 /9 ADF4117/ADF4118:


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    PDF ADF4116/ADF4117/ADF4118 ADF4116: ADF4117: ADF4118: ADF4117/ADF4118: ADF4116/ADF4117/ADF4118 13-bit ADF4116, 250uA, ADF41188 bfw 10 transistor TRANSISTOR BFW 11 TRANSISTOR BFW 11 pin diagram ADF4116 ADF4117 ADF4118 ADF41163 ADF41186