AT25DF1281
Abstract: 8MW1 VDFN AT45DBxxx atmel 528 8MW1 - VDFN footprint 8M1-A 8MA1 UDFN 8MW1 8S2 EIAJ SOIC 8cn3
Text: Density Vcc Min Mbits (V) DataFlash Page Erase Part Number Interface Architecture SPI SPI SPI SPI SPI SPI SPI, Rapid8 Speed (MHz) 66 66 66 66 66 66 66/50 Page-erase, Byte-alterable, 2.7 to 3.6V – Industrial Temperature Grade 2.7 2.7 2.7 2.7 2.7 2.7 2.7
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28-byte
AT25DF1281
8MW1 VDFN
AT45DBxxx
atmel 528
8MW1 - VDFN
footprint 8M1-A
8MA1 UDFN
8MW1
8S2 EIAJ SOIC
8cn3
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PDF
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NEC 10F
Abstract: HV0E226NF supercapacitor 1.0F HV0E106NF
Text: Super Capacitor HV Series Dimensions H Markings ͬL min. L min. 2.7V 10F SuperCapacitor P±0.1 φ D±0.5 Negative polarity HV φd Anode polarity Standard Rating Part No. HV0E106NF HV0E226NF HV0E506NF HV0E107NF Max. Operating Voltage Vdc 2.7 2.7 2.7 2.7 Nominal
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HV0E106NF
HV0E226NF
HV0E506NF
HV0E107NF
P0862SUCA16VOL07E
NEC 10F
supercapacitor 1.0F
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HV0E106N
Abstract: No abstract text available
Text: Super Capacitor HV Series Dimensions H L min. ͬL min. P±0.1 φ D±0.5 Negative polarity φd Anode polarity Markings 2.7V 10F SuperCapacitor HV Standard Rating Part No. HV0E106N HV0E226N HV0E506N HV0E107N Max. Rated Voltage Vdc 2.7 2.7 2.7 2.7 Nominal Capacitance
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HV0E106N
HV0E226N
HV0E506N
HV0E107N
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nec 10f
Abstract: 10F NEC
Text: Super Capacitor HV Series Dimensions H Markings ͬL min. L min. 2.7V 10F SuperCapacitor P±0.1 φ D±0.5 Negative polarity HV φd Anode polarity Standard Rating Part No. HV0E106NF HV0E226NF HV0E506NF HV0E107NF Max. Rated Voltage Vdc 2.7 2.7 2.7 2.7 Nominal
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HV0E106NF
HV0E226NF
HV0E506NF
HV0E107NF
P0704SUCA16VOL04E
nec 10f
10F NEC
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PDF
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HV0E506N
Abstract: HV0E106N HV0E107N HV0E226N
Text: Super Capacitor HV Series Dimensions H L min. ͬL min. P±0.1 φ D±0.5 Negative polarity φd Anode polarity Markings 2.7V 10F SuperCapacitor HV Standard Rating Part No. HV0E106N HV0E226N HV0E506N HV0E107N Max. Rated Voltage Vdc 2.7 2.7 2.7 2.7 Nominal Capacitance
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HV0E106N
HV0E226N
HV0E506N
HV0E107N
HV0E506N
HV0E106N
HV0E107N
HV0E226N
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PDF
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VCO 5GHz
Abstract: No abstract text available
Text: JXWBVCO-T-2.3-2.7 2.3~2.7GHz VCO Test report is for reference only. TEST REPORT for JXWBVCO-T-2.3-2.7 1 JXWBVCO-T-2.3-2.7 2.3~2.7GHz VCO Technical Specification Frequency Range GHz 2.3 – 2.7 Central Frequency(GHz) 2.5 RF Power(dBm) 10 Phase Noise(dBc/Hz)
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10KHz
-20dBc)
VCO 5GHz
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PDF
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zener diode 278
Abstract: 7D10 9D10 2EZ82D1 2EZ36D10 diodes zener 2ez
Text: Certificate TH97/10561QM 2EZ Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 2.7 - 330 Volts PD : 2 Watts 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : * Complete Voltage Range 2.7 to 330 Volts * High peak reverse power dissipation
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TH97/10561QM
TW00/17276EM
DO-41
UL94V-O
MIL-STD-202,
2EZ180D10
2EZ190D10
2EZ200D10
2EZ220D10
2EZ270D10
zener diode 278
7D10
9D10
2EZ82D1
2EZ36D10
diodes zener 2ez
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PDF
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yg802c10
Abstract: YG802C10R
Text: YG802C10R 100V / 10A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG802C10R
O-22OF15)
13Min
SC-67
yg802c10
YG802C10R
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PDF
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Untitled
Abstract: No abstract text available
Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C06R
O-22OF15)
13Min
SC-67
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PDF
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Untitled
Abstract: No abstract text available
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
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PDF
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Untitled
Abstract: No abstract text available
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
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PDF
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Untitled
Abstract: No abstract text available
Text: YG801C09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C09R
O-22OF15)
13Min
SC-67
500ns,
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PDF
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fast recovery diode 400v 5A
Abstract: No abstract text available
Text: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
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YG226S4
13Min
SC-67
fast recovery diode 400v 5A
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PDF
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YG226S2
Abstract: No abstract text available
Text: YG226S2 5A (200V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
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YG226S2
13Min
SC-67
YG226S2
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PDF
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Untitled
Abstract: No abstract text available
Text: YG801C06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 4.5±0.2 +0.2 -0.1 ø3.2 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG801C06R
O-22OF15)
13Min
SC-67
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PDF
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Untitled
Abstract: No abstract text available
Text: YG835C03R 30V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG835C03R
O-22OF15)
13Min
SC-67
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PDF
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Untitled
Abstract: No abstract text available
Text: YG835C03R 30V / 25A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 Low VF Super high speed switching. High reliability by planer design. 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG835C03R
O-22OF15)
13Min
SC-67
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PDF
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LNA-015-01-S08
Abstract: 15 GHz power amplifier power amplifier 15 GHz dB dBm
Text: Low Noise Amplifier 1.5/2.7 GHz LNA-015-01-S08 PRELIMINARY ELECTRICAL SPECIFICATION Frequency: 1.5 - 2.7 GHz Gain @ 1.5 GHz: 16.0 dB Gain @ 2.7 GHz: 12.0 dB Noise Figure NF NF @ 1.5 GHz: 0.85 dB NF @ 2.7 GHz: 0.65 dB P1dB @ 2.0 GHz 10.0 dBm Return Loss Input/Output
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LNA-015-01-S08
15 GHz power amplifier
power amplifier 15 GHz dB dBm
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SCHOTTKY 20A 40V
Abstract: a465
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
SCHOTTKY 20A 40V
a465
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PDF
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Untitled
Abstract: No abstract text available
Text: YG831C03R 30V / 6A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG831C03R
O-22OF15)
13Min
SC-67
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PDF
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Untitled
Abstract: No abstract text available
Text: FILTERS BANDPASS CENTER FREQUENCY INSERTION LOSS dB (MHz) Max PASSBAND 35 dB BANDWIDTH (MHz) 10.7 21.4 30.0 45.0 50.0 60.0 70.0 100 120 140 160 180 200 VSWR OUTLINE DRAWING PIN-OUT (See Below) MODEL (MHz) 1.7 1.7 1.7 1.7 1.7 1.7 1.7 2.7 2.7 2.7 2.7 2.7 2.7
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OCR Scan
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FNx-10
FNx-21
FNx-30
FNx-45
FNx-50
FNx-60
FNx-70
FNx-100
FNx-120
FNx-140
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Untitled
Abstract: No abstract text available
Text: 3 7 o o □4 2.4 1.5 1.5 2.4 1.5 2.4 D NO JL 2.7 2.7 1.8 2.7 1.8 E 1.5 2.4 1.5 C 47o4 4o 1.8 1.8 2.7 1.8 2.7 B "P IT C H £. 0o 15 REF Jiiiiiiiiiiiiiniilr HOUSING: HIGH TEMPERATURE THERMOPLASTIC TERMINAL: COPPER ALLOY NAIL: COPPER ALLOY OR STAINLESS FINISH
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OCR Scan
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G7589-200I
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PDF
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Untitled
Abstract: No abstract text available
Text: IC d e p e n d e n c e uPD72153GM CCR1G. 93MX7 - 'v item IC N 0 ^ \ a. [V] V1H/V1L LL 2.7 LH 2.7 CC 2.7 HH 2.7 b. [V] 3.4 3.4 .3 3.4 .3 3.4 .3 oscillating Room Vdd Rf STD V2H/V2L .3 of c. [MHz] d. characteristics Temp. [V ] [Mohm] [uS] 3 .3 1 m e. ite m f.
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OCR Scan
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uPD72153GM
93MX7
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 3 o o 2.4 1.8 2.7 1.5 18.45 2.5V X 67625-2005 2.4 1.8 2.7 1.5 18.45 2.5V X 67625-2003 PK-67589-002 T&R 1.5 2.7 1.8 2.4 17.55 1.8V 67625-2002 PK-67589-002 (T&R) 2.4 1.8 2.7 1.5 18.45 2.5V 67625-200 PK-67589-001 (TRAY) 1.5 2.7 1.8 2.4 17.55 1.8V 67625-2000
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OCR Scan
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PK-67589-002
PK-67589-001
S67S2501
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PDF
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