Untitled
Abstract: No abstract text available
Text: AN11102 BFU725F/N1 2.4 GHz LNA evaluation board Rev. 1 — 28 July 2011 Application note Document information Info Content Keywords LNA, 2.4GHz, BFU725F/N1 Abstract This document explains the BFU725F/N1 2.4GHz LNA evaluation Board. AN11102 NXP Semiconductors
|
Original
|
AN11102
BFU725F/N1
BFU725F/N1
AN111.
|
PDF
|
RF LNB C band chipset
Abstract: rfw102 RFW488C RFW24-A1 RFW488 white noise Generator 1GHz RFW102 front end RFW24 RFW-102 RF transceiver 2.4GHz wireless charging
Text: Datasheet October 2002 Rev. 1.03 RFWaves Ltd. RFW102 ISM Transceiver Chipset Key Features • • • • • • • • Designed for short range wireless communication in 2.4GHz - world wide license free band Data rate – up to 1Mb per second Simple interface – 3 line digital interface
|
Original
|
RFW102
-80dBm
RF LNB C band chipset
RFW488C
RFW24-A1
RFW488
white noise Generator 1GHz
RFW102 front end
RFW24
RFW-102
RF transceiver 2.4GHz wireless charging
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz
|
Original
|
BFP410
AEC-Q101
OT343
|
PDF
|
433MHZ amplifier 1w
Abstract: 433 mhz rf amplifier module 5w Smart RF04EB uhf linear amplifier module 5w ic sma 4038 ND 433 A TA31275EVKIT-433 smartrf04eb UGWW2USHN33A dkrn
Text: RF Wireless Evaluation Kit The Evaluation kits allow for a detailed evaluation of the Transceivers and Receiver. They enable testing of the device’s RF performance and require no additional support circuitry. The RF input uses a 50Ω matching network and an SMA connector for convenient connection to test
|
Original
|
TA31275EVKIT
TA31275M
TA32305M
TA32305EVKIT
16-QSOP
20-QSOP
ZNBG4000Q16CT-ND
ZNBG6000Q20CT-ND
ZNBG4000Q16TR-ND
ZNBG6000Q20TR-ND
433MHZ amplifier 1w
433 mhz rf amplifier module 5w
Smart RF04EB
uhf linear amplifier module 5w
ic sma 4038
ND 433 A
TA31275EVKIT-433
smartrf04eb
UGWW2USHN33A
dkrn
|
PDF
|
bfp410
Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package
|
Original
|
BFP410
OT343
bfp410
DRO lnb
BGA420
transistor frequency 1.5GHz gain 20 dB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package
|
Original
|
BFP410
OT343
|
PDF
|
TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
|
Original
|
|
PDF
|
2.4ghz lnb
Abstract: 1008CS-330XMBC ABA-32563 ABA-5X563 s2p aba ABA-51563 ABA-54563 ABA5X563 GRM40X7R102K50 ABA515563
Text: Using cascaded ABA series for high gain and high isolation amplifier up to 2400MHz Application Note 5227 Introduction Circuit Design This application note describes a two-stage cascaded amplifier using Avago Technologies Broadband Amplifier ABA silicon RF ICs. Avago Technologies
|
Original
|
2400MHz
ABA-54563
ABA-5X563
5989-2987EN
2.4ghz lnb
1008CS-330XMBC
ABA-32563
s2p aba
ABA-51563
ABA5X563
GRM40X7R102K50
ABA515563
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP640ESD
OT343
OT343-PO
OT343-FP
BFP640ESD:
OT323-TP
|
PDF
|
ASR-10SS
Abstract: YAGEO RC0805 raytheon klystron YAGEO RC0402 BGA2715-17 2.4ghz lnb 92F566 BUELA30K gps glonass BGA6489
Text: RF 手册 第 5 版 附录 Philips Semiconductors RF 产品的生产与设计手册 RF 手册附录 第5版 RF 产品的产品和设计手册 2004 年 10 月 4322 252 06394 RF 手册 附录 Koninklijke Philips Electronics N.V. 2004 年 10 月 1 of 36 RF 手册 第 5 版 附录
|
Original
|
BGA2715-17
BGA6x89
ASR-10SS
YAGEO RC0805
raytheon klystron
YAGEO RC0402
BGA2715-17
2.4ghz lnb
92F566
BUELA30K
gps glonass
BGA6489
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP720ESD
OT343
OT343-PO
OT343-FP
BFP720ESD:
OT323-TP
|
PDF
|
MARKING CODE T7s
Abstract: MARKINGCODET7s
Text: BFP740ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-08 RF & Protection Devices Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP740ESD
OT343
OT343-PO
OT343-FP
BFP740ESD:
OT323-TP
MARKING CODE T7s
MARKINGCODET7s
|
PDF
|
VCO 9GHZ 10GHZ
Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP720ESD
OT343
OT343-PO
OT343-FP
BFP720ESD:
OT323-TP
VCO 9GHZ 10GHZ
RF TRANSISTOR 10GHZ
C166
JESD22-A114
NF50
Germanium Transistor
|
PDF
|
BFP640ESD
Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP640ESD
OT343
OT343-PO
OT343-FP
BFP640ESD:
OT323-TP
BFP640ESD
RF TRANSISTOR 10GHZ
C166
JESD22-A114
NF50
Germanium Transistor
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP720ESD
OT343
OT343-PO
OT343-FP
BFP720ESD:
OT323-TP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP640ESD
OT343
OT343-PO
OT343-FP
BFP640ESD:
OT323-TP
|
PDF
|
RF TRANSISTOR 10GHZ
Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
Text: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP740ESD
OT343
OT343-PO
OT343-FP
BFP740ESD:
OT323-TP
RF TRANSISTOR 10GHZ
BFP740ESD
NXP Bluetooth IC
C166
JESD22-A114
NF50
vxWORKS
Germanium Transistor
gummel
transistor RF S-parameters
|
PDF
|
MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor
Text: 4th edition RF Manual, appendix Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4th edition March 2004 APPENDIX / documentation/rf_manual Document number: 4322 252 06388
|
Original
|
BF1107/8
BGA2715-17
BGA6589
MOSFET TRANSISTOR SMD MARKING CODE nh
ASR-10SS
Kathrein Antennas
Kathrein gsm ANTENNA
murata filter cfm 455 d
TRANSISTOR C 6090 EQUIVALENT
20000w audio amplifier schematic circuit diagram
marking code C1H mmic
murata filter cfm 455 k
A08 smd transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP840FESD
BFP840FESD:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP640FESD
BFP640FESD:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFR840L3RHESD
BFR840L3RHESD:
|
PDF
|
BFP840F
Abstract: Germanium Transistor spice gummel LNA ku-band
Text: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFP840FESD
BFP840FESD:
BFP840F
Germanium Transistor
spice gummel
LNA ku-band
|
PDF
|
BFR840L3RHESD
Abstract: Germanium Transistor LNA ku-band
Text: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFR840L3RHESD
BFR840L3RHESD:
BFR840L3RHESD
Germanium Transistor
LNA ku-band
|
PDF
|
rf transistor frequency 10.0GHz gain 20 dB
Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
|
Original
|
BFR840L3RHESD
BFR840L3RHESD:
rf transistor frequency 10.0GHz gain 20 dB
10.0GHZ TRANSISTOR AMPLIFIER
ku-band lnb
SiGe Microsystems
LNA ku-band
|
PDF
|