lm 3254
Abstract: No abstract text available
Text: ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1009 Chip Outline
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ICA1009
ICA1009
1-800-WJ1-4401
lm 3254
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mswsh-100-30
Abstract: MSWSH C1156 kl1420 KOA Chip Resistors Packaging BZX79-B51 SN74ACT14 ZVN4210G ZVP4424G atc 20v 0603 capacitor
Text: MSWSH-100-30 PIN Diode Shunt Switch Element 1 1 2 2 CM22 Heat sink is cathode, epoxy encapsulation Description Features A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA
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A17090
mswsh-100-30
MSWSH
C1156
kl1420
KOA Chip Resistors Packaging
BZX79-B51
SN74ACT14
ZVN4210G
ZVP4424G
atc 20v 0603 capacitor
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diode zener d1
Abstract: No abstract text available
Text: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description Features A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA
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MSWSH-100-30
A17090
diode zener d1
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lm 4580
Abstract: 4499 driver 4588
Text: ICA1008 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1008 Chip Outline
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ICA1008
ICA1008
1-800-WJ1-4401
lm 4580
4499 driver
4588
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MHW6181
Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
Text: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1
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SPSSG1009/D
MBC13720,
MBC13916
MRF1535T1,
MRF1550T1
MRF373A,
MRF373AS,
MRF374A,
MRF372
MRF9002R1,
MHW6181
MRF151G
MRF9135LS
MRF455 APPLICATION NOTES
amplifier mrf247
MRF247
MRF171A
MRF21180
MRF374A
MRF428
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M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station
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SG1009/D
MRF377
MW4IC001MR4
MRF9210,
MHVIC915R2,
MWIC930R1,
MWIC930GR1
MHVIC1905R2,
MW4IC2020MBR1,
MW4IC2020GMBR1,
M 9587
FS Oncore
MG4100
LDMOS PA Driver IC, Motorola
FS Oncore GPS
motorola GPS receiver module fs oncore
Motorola transistors MRF646
semiconductors cross index
transistor m 9587
MRF9210
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MSWSH-020-30
Abstract: C3156 VBT1-S5-S24-SMT-AFM C1156 20 GHz PIN diode 470 uF, 50V capacitor
Text: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other wireless infrastructure applications. It is also suited for
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MSWSH-020-30
A17087
MSWSH-020-30
C3156
VBT1-S5-S24-SMT-AFM
C1156
20 GHz PIN diode
470 uF, 50V capacitor
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MSWSH
Abstract: MSWSH-020-30 SRF 3800 Power MOSFET A1708 KOA Chip Resistors Packaging PIN DIODE 10V 10mA SMT ATC1206 part 1 date sheet 2012 2N7002E BSS84LT1
Text: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.25 dB typical up to 2.7 GHz • High Isolation 31 dB typical up to 2.7 GHz A broadband, high linearity, medium power shunt switch
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MSWSH-020-30
A17087
MSWSH
MSWSH-020-30
SRF 3800 Power MOSFET
A1708
KOA Chip Resistors Packaging
PIN DIODE 10V 10mA SMT
ATC1206
part 1 date sheet 2012
2N7002E
BSS84LT1
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Aeroflex ATC 600
Abstract: resistor rs 2W
Text: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.25 dB typical up to 2.7 GHz • High Isolation 31 dB typical up to 2.7 GHz A broadband, high linearity, medium power shunt switch
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MSWSH-020-30
A17087
Aeroflex ATC 600
resistor rs 2W
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A1708
Abstract: VBT1-S5-S5-SMT BSS84LT1G MSWSS-020-40 RK73B2HTTD181J KOA Chip Resistors Packaging capacitor 22-25 mosfet 6 ghz BSS84LT1 J-STD-20C
Text: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.3 dB typical up to 2.7 GHz • High Isolation 50 dB typical up to 2.7 GHz
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MSWSS-020-40
A17088
A1708
VBT1-S5-S5-SMT
BSS84LT1G
MSWSS-020-40
RK73B2HTTD181J
KOA Chip Resistors Packaging
capacitor 22-25
mosfet 6 ghz
BSS84LT1
J-STD-20C
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bzx79c5v6
Abstract: zener diode 1w, 5v 2.1 ghz 4 WATTS 5v
Text: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features A broadband, high linearity, medium power series shunt integrated switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TDSCDMA and other wireless infrastructure applications. It
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MSWSS-020-40
A17088
bzx79c5v6
zener diode 1w, 5v
2.1 ghz 4 WATTS 5v
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Untitled
Abstract: No abstract text available
Text: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other
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MSWSH-020-30
A17087,
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Aeroflex ATC 600
Abstract: bzx79-b24 MSWSH-020-30
Text: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Plastic Molded DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other
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MSWSH-020-30
A17087
Aeroflex ATC 600
bzx79-b24
MSWSH-020-30
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MSWSE-040-1
Abstract: R1751 BSS84LT1 SN74ACT14 20v atc 0603 capacitor 0401 resistor VBT1-S5-S12-SMT atc 1117
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Description Features A broadband, high linearity, medium power series switch element in a 2.0 X 1.3 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA and other wireless infrastructure applications. It is also suited for
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MSWSE-040-1
0805P)
A17089
MSWSE-040-1
R1751
BSS84LT1
SN74ACT14
20v atc 0603 capacitor
0401 resistor
VBT1-S5-S12-SMT
atc 1117
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Untitled
Abstract: No abstract text available
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch
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MSWSE-040-10
0805P)
A17089
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MSWSE-040-10
Abstract: No abstract text available
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch
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MSWSE-040-10
0805P)
A17089
MSWSE-040-10
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VBT1-S5-S12-SMT
Abstract: atc 1117 0-5 v to 4-20 ma converter
Text: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch
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MSWSE-040-10
0805P)
A17089
VBT1-S5-S12-SMT
atc 1117
0-5 v to 4-20 ma converter
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PDF
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amplifier HS 9004
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Electromechanical Filter 10.7 4 CONDUCTOR 3.5mm PLUG Metal Housing f 9222 l node B 3206 latching RELAY DPDT 12V relay 12v dc 5 chan Cannon connectors cell phone
Text: Programmable Attenuators & Attenuator/Switch Controllers o Widest Selection of Attenuation Ranges & Steps Sizes o Express shipment available on select models. o Built-In TTL\CMOS Interface Driver Circuitry available. o High Quality Construction & Connectors
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210A-1
IEEE-488)
210A-2
RS-232/RS-422/RS-485)
amplifier HS 9004
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Electromechanical Filter 10.7
4 CONDUCTOR 3.5mm PLUG Metal Housing
f 9222 l
node B 3206
latching RELAY DPDT 12V
relay 12v dc 5 chan
Cannon connectors
cell phone
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2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM riyadh cable n CONNECTOR weight ssb socket 4mm brown relay 12v dc 5 chan 800w class d circuit diagram schematics amplifier HS 9004 500 watts amplifier schematic diagram schematic diagram AC to DC converter 800W
Text: Fixed Attenuators Variable & Step Attenuators Programmable Attenuators Subsystems & Accessories Power Dividers & Splitters Terminations Connector Systems Coaxial Adapters Phase Shifters DC Blocks Microwave & RF Components & Subsystems Microwave & RF Components
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3400T
Abstract: cannon connector
Text: Programmable Attenuators & Attenuator/Switch Controllers o Widest Selection of Attenuation Ranges & Steps Sizes o Express shipment available on select models. o Built-In TTL\CMOS Interface Driver Circuitry available. o High Quality Construction & Connectors
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210A-1
IEEE-488)
210A-2
RS-232/RS-422/RS-485)
3400T
cannon connector
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PDF
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diagram for a 12v 250w power amplifier
Abstract: No abstract text available
Text: aw cover 2012_rear cover.qxd 6/13/2012 4:42 PM Page 1 Aeroflex / Weinschel Fixed Coaxial Attenuators Terminations & Loads Variable & Step Attenuators Power Dividers & Splitters Mechanical Phase Shifters DC Blocks Coaxial Adapters Microwave & RF Components & Subsystems
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lm 3254
Abstract: ICA1009 11293
Text: u u lÌ ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS IC A 1009 Chip Outline
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OCR Scan
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ICA1009
J1-4401
lm 3254
ICA1009
11293
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PDF
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Untitled
Abstract: No abstract text available
Text: ICA1009 m 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ m I•' j□# h I 1 I IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS
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ICA1009
ICA1009
J1-4401
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PDF
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Untitled
Abstract: No abstract text available
Text: ERICSSON S PTB 20173 60 Watts, 1.4-1.5 GHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20173 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.4-1.5 GHz frequency band. It is rated at 60 Watts minimum output
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120mA
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