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    2.1 CIRCUIT DIAGRAM Search Results

    2.1 CIRCUIT DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2.1 CIRCUIT DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM34018

    Abstract: No abstract text available
    Text: FM34018 Voice Switched Speakerphone Integrated Circuit Specification May. 2008 FM34018 Voice Switched Speakerphone Integrated Circuit Ver 2.1 Specification 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF


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    PDF FM34018 FU565

    panasonic photomos relay

    Abstract: aqy210
    Text: GU SOP 1 Form A Short Circuit Protection AQY210KS TESTING Small SOP4-pin type with short circuit protecting (Latch type) GU SOP 1 Form A Short Circuit Protection (AQY210KS) AQY210KS 4.3 .169 4.4 .173 2.1 .083 CAD Data mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS


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    PDF AQY210KS) AQY210KS 120mA aqy210ks: 010611J panasonic photomos relay aqy210

    DIM200PHM33-F000

    Abstract: No abstract text available
    Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Replaces June 2003 version, issue PDS5606-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability


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    PDF DIM200PHM33-F000 PDS5606-2 PDS5606-3 DIM200PHM33-F000

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


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    PDF MW7IC008N MW7IC008NT1 MW7IC008N

    DIM400WHS17-E000

    Abstract: No abstract text available
    Text: DIM400WHS17-E000 DIM400WHS17-E000 Half Bridge IGBT Module Replaces December 2003 version, issue PDS5665-2.1 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5665-3.1 February 2004


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    PDF DIM400WHS17-E000 PDS5665-2 PDS5665-3 DIM400WHS17-E000

    NTHC5513

    Abstract: NTHC5513T1
    Text: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / -2.1 A, ChipFET] Package This complementary N and P channel device was designed with a small footprint package and ON Semiconductor’s leading low RDS(on) technology for increased circuit efficiency. The performance is ideally


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    PDF NTHC5513 NTHC5513/D NTHC5513 NTHC5513T1

    DIM1200FSM12-A000

    Abstract: No abstract text available
    Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003


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    PDF DIM1200FSM12-A000 DS5547-2 DS5547-3 DIM1200FSM12-A000

    DIM800FSM12-A000

    Abstract: No abstract text available
    Text: DIM800FSM12-A000 DIM800FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5531-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5531-3.0 March 2003


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    PDF DIM800FSM12-A000 DS5531-2 DS5531-3 DIM800FSM12-A000

    DIM1600FSM12-A000

    Abstract: No abstract text available
    Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5533-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5533-3.0 March 2003


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    PDF DIM1600FSM12-A000 DS5533-2 DS5533-3 DIM1600FSM12-A000

    T-10802

    Abstract: T-10802G
    Text: 10BASE-T/ETHERNET ISOLATION TRANSFORMER Turns Ratio +5% PARAMETER TRIPLE STYLE (3 Transformers per Package) 1:1 MAX. UNITS 60 µHy Leakage Inductance 0.2 µHy Interwinding Capacitance (CW/W) 9 pF Rise Time 3 ns Open Circuit Inductance ET MIN. 40 2.1 0.2


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    PDF 10BASE-T/ETHERNET UL94-VO T-10802G T-10802 T-10802 T-10802G

    MR4010

    Abstract: mr4010 equivalent MR4010 circuit MUX31H LSI coreware library B010 R3000 R4000 LCB500K CW4010
    Text: MiniRISC MR4010 Superscalar Microprocessor Reference Device Contents 1 2 3 4 5 6 7 8 9 MR4010 Features MR4010 Functional Blocks 2.1 CW4010 Shell 2.2 Synchronous DRAM Controller DRAMC 2.3 SCbus to Local I/O Bus (Lbus) Controller (SCLC) 2.4 PLL Clock Circuit


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    PDF MR4010 MR4010 CW4010 mr4010 equivalent MR4010 circuit MUX31H LSI coreware library B010 R3000 R4000 LCB500K

    Untitled

    Abstract: No abstract text available
    Text: NCV896530 2.1 MHz Low Voltage Dual Output Buck Converter The NCV896530 dual step−down dc−dc converter is a monolithic integrated circuit dedicated to automotive driver information systems from a downstream voltage rail. Both channels are externally adjustable from 0.9 V to 3.3 V and can


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    PDF NCV896530 NCV896530 NCV896530/D

    AN3263

    Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical


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    PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 AN3263 AN1977 AN1987 j642 J1213 MW6IC1940NB

    SC12850

    Abstract: No abstract text available
    Text: STGW40H120F2 1200 V, 40 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 40 A • 5 s minimum short circuit withstand time at


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    PDF STGW40H120F2 O-247 SC12850 DocID025853 SC12850

    TQ9155

    Abstract: RF SPDT
    Text: T R I Q U I N T S E M I C O N D U C T O R , I N C . WIRELESS COMMUNICATIONS TQ9155 Block Diagram DC-2.5 GHz RF SPDT Switch RF COM 1 8 GND GND 2 7 GND RF 1 3 6 RF 2 V1 CTRL 4 5 V2 CTRL Features • Industry-Standard Pinout ■ Low Cost ■ Small SOIC8 Package


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    PDF TQ9155 TQ9155 RF SPDT

    male mii connector

    Abstract: LAN9303 BHR 10 JP13 EVB9303 8- position DIP switch JP8-JP14
    Text: LAN9303 Evaluation Board User Manual Copyright 2009 SMSC or its subsidiaries. All rights reserved. Circuit diagrams and other information relating to SMSC products are included as a means of illustrating typical applications. Consequently, complete information


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    PDF LAN9303 200Mbps LAN9303 EVB9303 male mii connector BHR 10 JP13 8- position DIP switch JP8-JP14

    EVB-USB2514BCQFN36

    Abstract: EVB-USB2514 USB2514 USB2512 EVB-USB2514Q36-BAS FR4 Prepreg MIC2026 USB2513 36pin qfn QFN 36 footprint
    Text: EVB-USB2514Q36-BAS, USB2513 and USB2512 36-Pin QFN Evaluation Board, Revision C User Manual Copyright 2009 SMSC or its subsidiaries. All rights reserved. Circuit diagrams and other information relating to SMSC products are included as a means of illustrating typical applications. Consequently, complete information


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    PDF EVB-USB2514Q36-BAS, USB2513 USB2512 36-Pin EVB-USB2514Q36-BAS EVB-USB2514BCQFN36 EVB-USB2514 USB2514 FR4 Prepreg MIC2026 36pin qfn QFN 36 footprint

    CMM6004-AH

    Abstract: CMM6004-AH-0000 CMM6004-AH-000T PB-CMM6004-AH-00A0
    Text: 0.05-6.0 GHz High Dynamic Range Amplifier CMM6004-AH April 2009 - Rev 16-Apr-09 Features Functional Block Diagram 0.05 to 6.0 GHz Frequency Range +41 dBm Output IP3 1.7 dB Noise Figure 15 dB Gain +23 dBm P1dB LGA Package Single Power Supply Single Input Matching


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    PDF CMM6004-AH 16-Apr-09 CMM6004-AH CMM6004-AH-0000 CMM6004-AH-000T PB-CMM6004-AH-00A0

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ICs LSI M65761FP QM-CODER SPECIFICATION OF INTEGRATED CIRCUIT 1. TYPE NO. M65761FP 2. FUNCTION 2.1 CIRCUIT FUNCTION QM-Coder 2.2 BLOCK DIAGRAM see the third page 3. APPLICATION FAX, PPC etc 4. OUTLINE 4.1 PACKAGE 4.2 OUTLINE DRAWING 100 Pin Plastic Molded Quad Flat Package (Fine Pitch)


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    PDF M65761FP 100P6S-A] G465181 16777216-BIT 4194304-WORD

    Untitled

    Abstract: No abstract text available
    Text: 2 Basic Principles of DC Motors 2.1 General Before presenting and discussing the principles of dri­ ve1' circuits, the relatively simple equivalent circuit of a permanent-magnet DC motor will be described. As shown in Fig. 1 , the equivalent circuit consists of


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    PDF Q00PRM

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY f s ” E M I C~b N D U C T O R s l _ PRELIM INARY IN F O R M A T IO N DS2380-2.1 SL374 SUBSCRIBER LINE INTERFACE CIRCUIT The SL374 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a


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    PDF DS2380-2 SL374 SL374

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SMBH1G150US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS Package code : 7-PM-BA • Buck(Step Down) Converter


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    PDF SMBH1G150US60

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET A P R IL 1997 Revision 2.1 LXT312 / LXT315 Low Power T1 PCM Repeaters / Transceivers General Description Features • Integrated repeater/transceiver circuit on a single CMOS chip The LXT312 and LXT315 are integrated repeater/transceiver circuits for T1 carrier systems. The LXT312 is a dual


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    PDF LXT312 LXT315 LXT315 eLXT312

    Untitled

    Abstract: No abstract text available
    Text: M ITEL WL600C _ 2 . 4 - 2.5GHz RF and IF Circuit Preliminary Information s e m ic o n d u c t o r DS4581 2.1 The W L600C is a 2.4-2.5G H z RF tra n sm itte r and receiver chip for use in digital radio, and operates from a supply voltage of 2.7 - 3.6V. It is designed to w o rk with the


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    PDF WL600C DS4581 L600C E6038